DAMAGE EVALUATION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, PRODUCTION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, GALLIUM NITRIDE COMPOUND SEMICONDUCTOR MEMBER, AND GALLIUM NITRIDE COMPOUND SEMICONDUCTOR MEMBRANE

• US 20100068834A1
• Filed: 11/20/2009
• Published: 03/18/2010
• Est. Priority Date: 06/13/2005
• Status: Active Grant

• Current Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Original Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Inventors: Ishibashi, Keiji, Hachigo, Akihiro, Nishiura, Takayuki
• Granted Patent: US 8,115,927 B2
• Time in Patent Office: Days
• US Class Current: 438/16
• CPC Class Codes: G01N 21/211 Ellipsometry optical thickness measurement G01B11/06

Abstract

A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement.

Claims

1-28. -28. (canceled)

29. A method of producing a compound semiconductor member, comprising:

a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and

a step of determining that the compound semiconductor member is nondefective when a maximum absolute value of a slope of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an imaginary part of a complex index of refraction obtained by the spectroscopic ellipsometry measurement is not less than a predetermined threshold.

43. The production method of the compound semiconductor member according to claim 29, wherein the compound semiconductor member is a compound semiconductor substrate.

44. The production method of the compound semiconductor member according to claim 29, wherein the compound semiconductor member is a compound semiconductor membrane provided on a substrate.

45. The production method of the compound semiconductor member according to claim 29, further comprising a step of forming a thin film on the surface of the compound semiconductor member, after the step of determining that the compound semiconductor member is nondefective.

46. The production method of the compound semiconductor member according to claim 29, further comprising a step of forming an electrode on the surface of the compound semiconductor member, after the step of determining that the compound semiconductor member is nondefective.

30. A method of producing a compound semiconductor member, comprising:

a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and

a step of determining that the compound semiconductor member is nondefective when an absolute value of an extremum of a first derivative of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an imaginary part of a complex index of refraction obtained by the spectroscopic ellipsometry measurement is not less than a predetermined threshold.

31. A method of producing a compound semiconductor member, comprising:

a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and

a step of determining that the compound semiconductor member is nondefective when a wavelength at which an absolute value of a slope of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an imaginary part of a complex index of refraction obtained by the spectroscopic ellipsometry measurement is maximum, is not less than a predetermined threshold.

32. A method of producing a compound semiconductor member, comprising:

a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and

a step of determining that the compound semiconductor member is nondefective when a maximum absolute value of a slope of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an imaginary part of a complex dielectric constant obtained by the spectroscopic ellipsometry measurement is not less than a predetermined threshold.

33. A method of producing a compound semiconductor member, comprising:

a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and

a step of determining that the compound semiconductor member is nondefective when an absolute value of an extremum of a first derivative of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an imaginary part of a complex dielectric constant obtained by the spectroscopic ellipsometry measurement is not less than a predetermined threshold.

34. A method of producing a compound semiconductor member, comprising:

a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and

a step of determining that the compound semiconductor member is nondefective when a wavelength at which an absolute value of a slope of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an imaginary part of a complex dielectric constant obtained by the spectroscopic ellipsometry measurement is maximum, is not less than a predetermined threshold.

35. A method of producing a compound semiconductor member, comprising:

a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and

a step of determining that the compound semiconductor member is nondefective when a maximum absolute value of a slope in a portion located on a shorter wavelength side than a wavelength corresponding to a maximum of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of a real part of a complex index of refraction obtained by the spectroscopic ellipsometry measurement is not less than a predetermined threshold.

36. A method of producing a compound semiconductor member, comprising:

a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and

a step of determining that the compound semiconductor member is nondefective when a maximum absolute value of a slope in a portion located on a longer wavelength side than a wavelength corresponding to a maximum of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of a real part of a complex index of refraction obtained by the spectroscopic ellipsometry measurement is not less than a predetermined threshold.

37. A method of producing a compound semiconductor member, comprising:

a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and

a step of determining that the compound semiconductor member is nondefective when a wavelength at which an absolute value of a slope in a portion located on a shorter wavelength side than a wavelength corresponding to a maximum in a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of a real part of a complex index of refraction obtained by the spectroscopic ellipsometry measurement is maximum, is not less than a predetermined threshold.

38. A method of producing a compound semiconductor member, comprising:

a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and

a step of determining that the compound semiconductor member is nondefective when a maximum of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of a real part of a complex index of refraction obtained by the spectroscopic ellipsometry measurement is not less than a predetermined threshold.

39. A method of producing a compound semiconductor member, comprising:

a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and

a step of determining that the compound semiconductor member is nondefective when a maximum absolute value of a slope in a portion located on a shorter wavelength side than a wavelength corresponding to a maximum of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of a real part of a complex dielectric constant obtained by the spectroscopic ellipsometry measurement is not less than a predetermined threshold.

40. A method of producing a compound semiconductor member, comprising:

a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and

a step of determining that the compound semiconductor member is nondefective when a maximum absolute value of a slope in a portion located on a longer wavelength side than a wavelength corresponding to a maximum of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of a real part of a complex dielectric constant obtained by the spectroscopic ellipsometry measurement is not less than a predetermined threshold.

41. A method of producing a compound semiconductor member, comprising:

a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and

a step of determining that the compound semiconductor member is nondefective when a wavelength at which an absolute value of a slope in a portion located on a shorter wavelength side than a wavelength corresponding to a maximum of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of a real part of a complex dielectric constant obtained by the spectroscopic ellipsometry measurement is maximum, is not less than a predetermined threshold.

42. A method of producing a compound semiconductor member, comprising:

a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and

a step of determining that the compound semiconductor member is nondefective when a maximum of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of a real part of a complex dielectric constant obtained by the spectroscopic ellipsometry measurement is not less than a predetermined threshold.

47-70. -70. (canceled)