SEMICONDUCTOR DEVICE

• US 20100072467A1
• Filed: 09/10/2009
• Published: 03/25/2010
• Est. Priority Date: 09/19/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: AKIMOTO, Kengo, YAMAZAKI, Shunpei, UOCHI, Hideki, CHIBA, Yoko, KOMORI, Shigeki, WADA, Rihito
• Granted Patent: US 9,478,597 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 50/82 Cathodes
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/8052 Cathodes

Abstract

A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate.

Claims

1. A semiconductor device comprising:

a first substrate having a pixel portion and a common connection portion;

a second substrate having a first conductive layer; and

a conductive particle between the first substrate and the second substrate,

wherein the pixel portion comprises;

a gate electrode over the first substrate;

a first insulating layer over the gate electrode;

a first oxide semiconductor layer over the first insulating layer;

a second insulating layer over a part of the first oxide semiconductor layer;

a second oxide semiconductor layer and a third oxide semiconductor layer over the first oxide semiconductor layer and the second insulating layer;

a second conductive layer over the first insulating layer and the second oxide semiconductor layer;

a third conductive layer over the first insulating layer and the third oxide semiconductor layer;

a third insulating layer over the second and third conductive layers and the second insulating layer, the third insulating layer having a first contact hole formed over the third conductive layer; and

a fourth conductive layer over the third insulating layer and electrically connected to the third conductive layer through the first contact hole

wherein the common connection portion comprises;

a fourth insulating layer over the first substrate;

a fifth conductive layer over the fourth insulating layer;

a fifth insulating layer having a second contact hole formed over the fifth conductive layer; and

a sixth conductive layer over the fifth insulating layer and electrically connected to the fifth conductive layer through the second contact hole,

wherein the sixth conductive layer in the common connection portion is electrically connected to the first conductive layer through the conductive particle,

wherein the second conductive layer, the third conductive layer, and the fifth conductive layer are formed of the same material,

wherein the fourth conductive layer and the sixth conductive layer are formed of the same material,

wherein the first insulating layer and the fourth insulating layer are formed of the same material, and

wherein the third insulating layer and the fifth insulating layer are formed of the same material.

2. The semiconductor device according to claim 1, wherein the common connection portion further comprises a fourth oxide semiconductor layer interposed between the fourth insulating layer and the fifth conductive layer, and

wherein the first oxide semiconductor layer and the fourth oxide semiconductor layer are formed of the same material.

3. The semiconductor device according to claim 1, wherein the common connection portion further comprises a fifth oxide semiconductor layer interposed between the fourth insulating layer and the fifth conductive layer, and

wherein the second oxide semiconductor layer, the third oxide semiconductor layer, and the fifth oxide semiconductor layer are formed of the same material.

4. The semiconductor device according to claim 1, wherein the first to third oxide semiconductor layers include indium, gallium, and zinc.

5. The semiconductor device according to claim 1, wherein the second conductive layer, the third conductive layer and the fifth conductive layer include Ti.

6. The semiconductor device according to claim 1, wherein the conductive particle is included in a sealant, and

wherein the first substrate is fixed to the second substrate with the sealant.

7. The semiconductor device according to claim 1, wherein the first oxide semiconductor layer has a higher oxygen concentration than the second and third oxide semiconductor layers.

8. A semiconductor device comprising:

a first substrate having a pixel portion and a common connection portion;

a second substrate having a first conductive layer; and

a conductive particle between the first substrate and the second substrate,

wherein the pixel portion comprises;

a gate electrode over the first substrate;

a first insulating layer over the gate electrode;

a first oxide semiconductor layer over the first insulating layer;

a second insulating layer over a part of the first oxide semiconductor layer;

a second oxide semiconductor layer and a third oxide semiconductor layer over the first oxide semiconductor layer and the second insulating layer;

a second conductive layer over the first insulating layer and the second oxide semiconductor layer;

a third conductive layer over the first insulating layer and the third oxide semiconductor layer;

a third insulating layer over the second and third conductive layers and the second insulating layer, the third insulating layer having a first contact hole formed over the third conductive layer; and

a fourth conductive layer over the third insulating layer and electrically connected to the third conductive layer through the first contact hole,

wherein the common connection portion comprises;

a fifth conductive layer over the first substrate;

a fourth insulating layer having a second contact hole, the fourth insulating layer formed over the fifth conductive layer; and

a sixth conductive layer over the fourth insulating layer and electrically connected to the fifth conductive layer through the second contact hole,

wherein the sixth conductive layer in the common connection portion is electrically connected to the first conductive layer through the conductive particle,

wherein the gate electrode and the fifth conductive layer are formed of the same material,

wherein the fourth conductive layer and the sixth conductive layer are formed of the same material, and

wherein the first insulating layer and the fourth insulating layer are formed of the same material.

9. The semiconductor device according to claim 8, wherein the first to third oxide semiconductor layers include indium, gallium, and zinc.

10. The semiconductor device according to claim 8, wherein the second conductive layer and the third conductive layer include Ti.

11. The semiconductor device according to claim 8, wherein the conductive particle is included in a sealant, and

wherein the first substrate is fixed to the second substrate with the sealant.

12. The semiconductor device according to claim 8, wherein the common connection portion further comprises a fifth insulating layer having a third contact hole,

wherein the fifth insulating layer is interposed between the fourth insulating layer and the sixth conductive layer,

wherein the third insulating layer and the fifth insulating layer are formed of the same material, and

wherein the sixth conductive layer is electrically connected to the fifth conductive layer through the second contact hole and the third contact hole.

13. The semiconductor device according to claim 8, wherein the first oxide semiconductor layer has a higher oxygen concentration than the second and third oxide semiconductor layers.

14. A semiconductor device comprising:

a first substrate having a pixel portion and a common connection portion;

a second substrate having a first conductive layer; and

a conductive particle between the first substrate and the second substrate,

wherein the pixel portion comprises;

a gate electrode over the first substrate;

a first insulating layer over the gate electrode;

a first oxide semiconductor layer over the first insulating layer;

a second insulating layer over a part of the first oxide semiconductor layer;

a second oxide semiconductor layer and a third oxide semiconductor layer over the first oxide semiconductor layer and the second insulating layer;

a second conductive layer over the first insulating layer and the second oxide semiconductor layer;

a third conductive layer over the first insulating layer and the third oxide semiconductor layer;

a third insulating layer over the second and third conductive layers and the second insulating layer, the third insulating layer having a first contact hole formed over the third conductive layer; and

a fourth conductive layer over the third insulating layer and electrically connected to the third conductive layer through the first contact hole,

wherein the common connection portion comprises;

a fifth conductive layer over the first substrate;

a fourth insulating layer over the fifth conductive layer;

a sixth conductive layer over the fourth insulating layer;

a fifth insulating layer having a second contact hole formed over the sixth conductive layer; and

a seventh conductive layer over the fifth insulating layer and electrically connected to the sixth conductive layer through the second contact hole,

wherein the seventh conductive layer in the common connection portion is electrically connected to the first conductive layer through the conductive particle,

wherein the gate electrode and the fifth conductive layer are formed of the same material,

wherein the second conductive layer, the third conductive layer, and the sixth conductive layer are formed of the same material,

wherein the fourth conductive layer and the seventh conductive layer are formed of the same material,

wherein the first insulating layer and the fourth insulating layer are formed of the same material, and

wherein the third insulating layer and the fifth insulating layer are formed of the same material.

15. The semiconductor device according to claim 14, wherein the common connection portion further comprises a fourth oxide semiconductor layer interposed between the fourth insulating layer and the sixth conductive layer, and

wherein the first oxide semiconductor layer and the fourth oxide semiconductor layer are formed of the same material.

16. The semiconductor device according to claim 14, wherein the common connection portion further comprises a fifth oxide semiconductor layer interposed between the fourth insulating layer and the sixth conductive layer, and

wherein the second oxide semiconductor layer, the third oxide semiconductor layer, and the fifth oxide semiconductor layer are formed of the same material.

17. The semiconductor device according to claim 14, wherein the first to third oxide semiconductor layers include indium, gallium, and zinc.

18. The semiconductor device according to claim 14, wherein the second conductive layer, the third conductive layer, and the sixth conductive layer include Ti.

19. The semiconductor device according to claim 14, wherein the conductive particle is included in a sealant, and

wherein the first substrate is fixed to the second substrate with the sealant.

20. The semiconductor device according to claim 14, wherein a potential of the fifth conductive layer and a potential of the sixth conductive layer are different from each other.

21. The semiconductor device according to claim 14, wherein the first oxide semiconductor layer has a higher oxygen concentration than the second and third oxide semiconductor layers.

22. A semiconductor device comprising:

a first substrate having a pixel portion and a common connection portion;

a second substrate having a first conductive layer; and

a conductive particle between the first substrate and the second substrate,

wherein the pixel portion comprises;

a gate electrode over the first substrate;

a first insulating layer over the gate electrode;

an oxide semiconductor layer over the first insulating layer;

a second insulating layer over a part of the oxide semiconductor layer;

a second conductive layer on the oxide semiconductor layer;

a third conductive layer on the oxide semiconductor layer;

a third insulating layer over the second and third conductive layers and the second insulating layer, the third insulating layer having a first contact hole formed over the third conductive layer; and

a fourth conductive layer over the third insulating layer and electrically connected to the third conductive layer through the first contact hole,

wherein the common connection portion comprises;

a fourth insulating layer over the first substrate;

a fifth conductive layer over the fourth insulating layer;

a fifth insulating layer having a second contact hole formed over the fifth conductive layer; and

a sixth conductive layer over the fifth insulating layer and electrically connected to the fifth conductive layer through the second contact hole,

wherein the sixth conductive layer in the common connection portion is electrically connected to the first conductive layer through the conductive particle,

wherein the second conductive layer, the third conductive layer, and the fifth conductive layer are formed of the same material,

wherein the fourth conductive layer and the sixth conductive layer are formed of the same material,

wherein the first insulating layer and the fourth insulating layer are formed of the same material, and

wherein the third insulating layer and the fifth insulating layer are formed of the same material.

23. The semiconductor device according to claim 22, wherein the oxide semiconductor layers include indium, gallium, and zinc.

24. The semiconductor device according to claim 22, wherein the second conductive layer, the third conductive layer, and the fifth conductive layer include Ti.

25. The semiconductor device according to claim 22, wherein the conductive particle is included in a sealant, and

wherein the first substrate is fixed to the second substrate with the sealant.

26. The semiconductor device according to claim 22, wherein the common connection portion further comprises a seventh conductive layer interposed between the first substrate and the fourth insulating layer, and

wherein the gate electrode and the seventh conductive layer are formed of the same material.

27. The semiconductor device according to claim 26, wherein the fifth conductive layer is electrically connected to the seventh conductive layer.