Thin-Film Light Emitting Diode Chip and Method for Producing a Thin-Film Light Emitting Diode Chip

• US 20100072500A1
• Filed: 01/22/2007
• Published: 03/25/2010
• Est. Priority Date: 01/29/2007
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Herrmann, Siegfried
• Granted Patent: US 9,142,720 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: B29C 43/021 characterised by the shape of the surface
• CPC Class Codes: B29C 43/203 Making multilayered articles
• CPC Class Codes: B29L 2011/0016 Lenses
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A thin-film light-emitting diode chip with a layer stack having a first emission surface and an opposite second emission surface, so that the thin-film light-emitting diode chip has at least two main emission directions. Measures for improving the outcoupling of the light generated in the layer sequence are provided on both the first and the second main emission surface. A method is disclosed for manufacturing a thin-film light-emitting diode chip.

Claims

1. A thin-film light-emitting diode chip comprising a layer stack having a first main emission surface and an opposite second main emission surface, so that the thin-film light-emitting diode chip has at least two main emission directions, wherein measures for improving the outcoupling of the light generated in the layer sequence are provided on both the first and the second main emission surface.

2. The thin-film light-emitting diode chip according to claim 1, wherein the main emission surfaces of the layer sequence are at least partially roughened to improve the outcoupling of the light generated in the layer sequence.

3. The thin-film light-emitting diode chip according to claim 2, wherein a roughened section is produced in a wet-chemical or dry-chemical process.

4. The thin-film light-emitting diode chip according to claim 2, wherein the structure size of the roughened sections is about 350 nm.

5. The thin-film light-emitting diode chip according to claim 1, wherein outcoupling prisms are formed on the main emission surfaces to improve the outcoupling of the light generated in the layer sequence.

6. The thin-film light-emitting diode chip according to claim 1, wherein contact areas are provided on at least one of the main emission surfaces for connecting the thin-film light-emitting diode chip.

7. The thin-film light-emitting diode chip according to claim 6, wherein a mirror coating is provided on the side of contact areas facing the layer sequence.

8. The thin-film light-emitting diode chip according to claim 1, wherein the contact areas are strip-shaped, for distributing current to various areas of the layer sequence.

9. The thin-film light-emitting diode chip according to claim 1, wherein the thickness of the layer sequence lies between 5 μ

m and 15 μ

m.

10. The thin-film light-emitting diode chip according to claim 1, wherein the layer sequence has adjacent layers of an n-doped InGaN and a p-doped InGaN.

11. An arrangement comprising a thin-film light-emitting diode chip according to claim 1 and transparent carrier films, each bearing contact traces, wherein the contact traces are each connected to the contact areas of the thin-film light-emitting diode chip.

12. The arrangement according to claim 11, wherein the contact traces are made of indium-tin oxide.

18. The thin-film light-emitting diode chip according to claim 8, wherein the strip-shaped contact areas are frame-shaped.

13. A method for manufacturing a thin-film light-emitting diode chip comprising the steps of:

forming a layer sequence suitable for emitting light from a semiconductor material, on a growth substrate;

forming an electrically conductive first contact material layer on a first side of the layer sequence;

structuring the first contact material layer to form a contact area;

connecting the structured first contact material layer to a carrier;

removing the growth substrate;

forming an electrically conductive second contact material layer on a second side of the layer sequence on the opposite side from the first side of the layer sequence;

structuring the second contact material layer to form a contact area; and

separating the first contact material layer from the carrier.

14. The method according to claim 13, wherein areas of the active layer sequence that are free of the first contact material layer are roughened on their surface.

15. The method according to claim 13, wherein areas of the layer sequence that are free of the second contact material layer are roughened on their surface.

16. The method according to claim 13, wherein during or after the structuring of the first and/or second contact material layer, outcoupling prisms are formed on the surface of the layer sequence.

17. The method according to claim 13, wherein the contact material layers are applied in such a manner that the sides facing the layer sequence are mirror-coated.

19. The method of claim 14, wherein areas of the active layer sequence that are free of the first contact material layer are roughened on their surface by a wet-chemical process.

20. The method of claim 15, wherein areas of the active layer sequence that are free of the second contact material layer are roughened on their surface by a wet-chemical process.