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ELECTRONIC CIRCUIT CONTROL ELEMENT WITH TAP ELEMENT

  • US 20100072540A1
  • Filed: 11/25/2009
  • Published: 03/25/2010
  • Est. Priority Date: 05/27/2003
  • Status: Active Grant
First Claim
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1. A high voltage transistor, comprising:

  • an N+ drain region;

    an N+ source region;

    an N+ tap region;

    a P type body region adjoining the N+ source region;

    an N−

    drift region extending from the drain region to the P type body region;

    an N−

    tap drift region extending from the N+ drain region to the N+ tap region, wherein the N+ tap region adjoins the N−

    tap drift region at an end of the N−

    tap drift region opposite the N+ drain region; and

    an insulated gate adjacent the P type body region.

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