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WAFER BONDING METHOD AND WAFER STACK FORMED THEREBY

  • US 20100072555A1
  • Filed: 09/23/2009
  • Published: 03/25/2010
  • Est. Priority Date: 09/24/2008
  • Status: Active Grant
First Claim
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1. A wafer bonding process comprising:

  • providing a first bonding site on a surface of a first wafer;

    depositing at least a first bonding stack on a surface of a second wafer;

    forming at least a first groove in the surface of the first wafer, the first groove either surrounding the first bonding site or lying entirely within the first bonding site;

    aligning and mating the first and second wafers so that the first bonding stack on the second wafer contacts the first bonding site on the first wafer; and

    thenheating the first and second wafers to reflow the first bonding stack on the second wafer, form a molten bonding material, cause at least a portion of the molten bonding material to flow into the first groove in the surface of the first wafer, and form a first bonding structure that bonds to the first bonding site of the first wafer and bonds the second wafer to the first wafer.

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