Semiconductor Device and Manufacturing Method of the Same

• US 20100072583A1
• Filed: 09/22/2009
• Published: 03/25/2010
• Est. Priority Date: 09/25/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Eguchi, Shingo, Oikawa, Yoshiaki
• Granted Patent: US 8,102,034 B2
• Time in Patent Office: Days
• US Class Current: 257/659
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding

Abstract

With the use of a conductive shield formed on the top or bottom side of a semiconductor integrated circuit, an electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge is prevented, and sufficient communication capability is obtained. With the use of a pair of insulators which sandwiches the semiconductor integrated circuit, a highly reliable semiconductor device that is reduced in thickness and size and has resistance to an external stress can be provided. A semiconductor device can be manufactured with high yield while defects of shapes and characteristics due to an external stress or electrostatic discharge are prevented in the manufacturing process.

Claims

1. A semiconductor device comprising:

a semiconductor integrated circuit;

an antenna electrically connected to the semiconductor integrated circuit;

a conductive film provided so as to overlap with the semiconductor integrated circuit with a first insulator provided therebetween; and

a second insulator provided so that the semiconductor integrated circuit, the antenna, and the conductive film are surrounded by the second insulator,

wherein the conductive film acts as a conductive shield, and

wherein the second insulator includes a structural body in which a fibrous body is impregnated with a resin.

2. The semiconductor device according to claim 1, wherein the conductive film includes metal.

3. The semiconductor device according to claim 2, wherein the metal is a titanium film with a thickness of greater than or equal to 5 nm and less than or equal to 100 nm.

4. The semiconductor device according to claim 1, wherein the conductive film includes metal oxide.

5. The semiconductor device according to claim 4, wherein the metal oxide is an indium tin oxide film with a thickness of greater than or equal to 5 nm and less than or equal to 100 nm containing silicon oxide.

6. The semiconductor device according to claim 1, wherein the conductive film includes semiconductor or metal nitride.

7. The semiconductor device according to claim 1, wherein the conductive film has a structure in which island-shaped conductors formed using metal, metal oxide, semiconductor, or metal nitride are scattered.

8. The semiconductor device according to claim 1, wherein the thickness of at least one of the first insulator and the second insulator is greater than or equal to 5 μ

m and less than or equal to 50 μ

m.

9. The semiconductor device according to claim 1, wherein the second insulator has an elasticity of more than or equal to 5 GPa and less than or equal to 15 GPa.

10. The semiconductor device according to claim 1, wherein the conductive shield is electrically isolated from the semiconductor integrated circuit.

11. A semiconductor device comprising:

a semiconductor integrated circuit;

an antenna electrically connected to the semiconductor integrated circuit;

a conductive film provided so as to overlap with the semiconductor integrated circuit with a first insulator provided therebetween;

a second insulator provided so that the semiconductor integrated circuit, the antenna, and the conductive film are surrounded by the second insulator; and

a third insulator provided so that the second insulator is surrounded by the third insulator,

wherein the conductive film acts as a conductive shield.

12. The semiconductor device according to claim 11, wherein the second insulator includes a structural body in which a fibrous body is impregnated with a resin.

13. The semiconductor device according to claim 11, wherein the conductive film includes metal.

14. The semiconductor device according to claim 13, wherein the metal is a titanium film with a thickness of greater than or equal to 5 nm and less than or equal to 100 nm.

15. The semiconductor device according to claim 11, wherein the conductive film includes metal oxide.

16. The semiconductor device according to claim 15, wherein the metal oxide is an indium tin oxide film with a thickness of greater than or equal to 5 nm and less than or equal to 100 nm containing silicon oxide.

17. The semiconductor device according to claim 11, wherein the conductive film includes semiconductor or metal nitride.

18. The semiconductor device according to claim 11, wherein the conductive film has a structure in which island-shaped conductors formed using metal, metal oxide, semiconductor, or metal nitride are scattered.

19. The semiconductor device according to claim 11, wherein the thickness of at least one of the first insulator and the second insulator is greater than or equal to 5 μ

m and less than or equal to 50 μ

m.

20. The semiconductor device according to claim 11, wherein the second insulator has an elasticity of more than or equal to 5 GPa and less than or equal to 15 GPa.

21. The semiconductor device according to claim 11, wherein the conductive shield is electrically isolated from the semiconductor integrated circuit.

22. A semiconductor device comprising:

a semiconductor integrated circuit;

an antenna electrically connected to the semiconductor integrated circuit;

a conductive film provided so as to overlap with the semiconductor integrated circuit with a first insulator provided therebetween;

a second insulator provided so that the semiconductor integrated circuit, the antenna, and the conductive film are surrounded by the second insulator; and

a third insulator provided so that the second insulator is surrounded by the third insulator,

wherein the conductive film acts as a conductive shield, and

wherein the second insulator includes a structural body in which a fibrous body is impregnated with a resin, and

wherein the second insulator has a region which is melted and fused together.

23. The semiconductor device according to claim 22, wherein the conductive film includes metal.

24. The semiconductor device according to claim 23, wherein the metal is a titanium film with a thickness of greater than or equal to 5 nm and less than or equal to 100 nm.

25. The semiconductor device according to claim 22, wherein the conductive film includes metal oxide.

26. The semiconductor device according to claim 25, wherein the metal oxide is an indium tin oxide film with a thickness of greater than or equal to 5 nm and less than or equal to 100 nm containing silicon oxide.

27. The semiconductor device according to claim 22, wherein the conductive film includes semiconductor or metal nitride.

28. The semiconductor device according to claim 22, wherein the conductive film has a structure in which island-shaped conductors formed using metal, metal oxide, semiconductor, or metal nitride are scattered.

29. The semiconductor device according to claim 22, wherein the thickness of at least one of the first insulator and the second insulator is greater than or equal to 5 μ

m and less than or equal to 50 μ

m.

30. The semiconductor device according to claim 22, wherein the second insulator has an elasticity of more than or equal to 5 GPa and less than or equal to 15 GPa.

31. The semiconductor device according to claim 22, wherein the conductive shield is electrically isolated from the semiconductor integrated circuit.