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TMR device with novel free layer structure

  • US 20100073827A1
  • Filed: 09/22/2008
  • Published: 03/25/2010
  • Est. Priority Date: 09/22/2008
  • Status: Active Grant
First Claim
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1. A magnetoresistive element in a magnetic device, comprising:

  • (a) a synthetic anti-parallel (SyAP) pinned layer;

    (b) a free layer comprised of (CoFe/CoFeB)n, (CoFeM/CoFeB)n, (CoFe/CoFeBM)n, (CoFeM/CoFeBM)n, (CoFeLM/CoFeB)n, or (CoFeLM/CoFeBM)n wherein n≧

    2, L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb, and L is unequal to M, and each of said CoFeB or CoFeBM layers has a greater thickness than each of said CoFe, CoFeM, or CoFeLM layers, and;

    (c) a tunnel barrier layer having a first surface that contacts the SyAP pinned layer and a second surface that contacts a CoFe, CoFeM, or CoFeLM layer in said free layer wherein said second surface is opposite said first surface.

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