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TMR device with novel free layer

  • US 20100073828A1
  • Filed: 09/22/2008
  • Published: 03/25/2010
  • Est. Priority Date: 09/22/2008
  • Status: Active Grant
First Claim
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1. A magnetoresistive element in a magnetic device, comprising:

  • (a) a synthetic anti-parallel (SyAP) pinned layer;

    (b) a tunnel barrier layer having a first surface that contacts the SyAP pinned layer and a second surface opposite the first surface that contacts a free layer; and

    (c) a composite free layer with a FL1/FL2/FL3 configuration, comprising;

    (1) a FL1 layer contacting the second surface of the tunnel barrier layer, said FL1 layer comprises Fe(100-X)CoX where x is from 0 to 100 atomic %, or a FeCoM alloy;

    (2) a FL2 layer formed on the FL1 layer and comprising (Co100-VFeV)100-YBY where v is 10 to 70 atomic %, and y is from 5 to 40 atomic %, or a CoFeB alloy; and

    (3) a FL3 layer disposed on the FL2 layer, said FL3 layer comprises Co(100-Z)BZ where z is 10 to 40 atomic %, a composite structure represented by (CoB/CoFe)n where n is ≧

    1 or (CoB/CoFe)m/CoB where m is ≧

    1, or a CoBQ alloy where Q is one of Ni, Mn, Tb, W, Hf, Zr, Nb, or Si.

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