PLASMA FILM FORMING APPARATUS AND PLASMA FILM FORMING METHOD

• US 20100075066A1
• Filed: 09/11/2007
• Published: 03/25/2010
• Est. Priority Date: 10/16/2006
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Ueda, Hirokazu, Horigome, Masahiro
• Application Number:
  US12/444,600
• Publication Number:
  US 20100075066A1
• Time in Patent Office: Days
• US Class Current: 427/575
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/4558 Perforated rings
• CPC Class Codes: C23C 16/511 using microwave discharges
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32238 Windows
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: H01L 21/02197 the material having a perovskite structure, e.g. BaTiO3
• CPC Class Codes: H01L 21/31608 Deposition of SiO2 H01L21/31625, H01L21/31629 and H01L21/31633 take precedence

Abstract

A plasma film forming apparatus includes: a processing chamber; a mounting table for mounting thereon a target object; a ceiling plate which is installed at a ceiling portion and is made of a dielectric material; a gas introduction mechanism for introducing a processing gas including a film formation source gas and a supporting gas; and a microwave introduction mechanism which is installed at a ceiling plate'"'"'s side and has a planar antenna member. The gas introduction mechanism includes: a central gas injection hole for the source gas, located above a central portion of the target object; and a plurality of peripheral gas injection holes for the source gas, arranged above a peripheral portion of the target object along a circumferential direction thereof. A plasma shielding member is installed above the target object and between the central gas injection hole and the peripheral gas injection holes along the circumferential direction thereof.

Claims

1. A plasma film forming apparatus comprising:

a processing chamber which has its ceiling portion opened and is evacuable;

a mounting table installed in the processing chamber, for mounting thereon a target object to be processed;

a ceiling plate which is airtightly installed at an opening of the ceiling portion and is made of a dielectric material capable of transmitting a microwave;

a gas introduction mechanism for introducing a processing gas including a film formation source gas and a supporting gas into the processing chamber; and

a microwave introduction mechanism which is installed at a ceiling plate'"'"'s side and has a planar antenna member so as to introduce the microwave into the processing chamber,

wherein the gas introduction mechanism includes;

a central gas injection hole for the source gas, located above a central portion of the target object;

a plurality of peripheral gas injection holes for the source gas, arranged above a peripheral portion of the target object along a circumferential direction of the target object; and

a plasma shielding member for shielding plasma is installed above an intermediate portion located between the central portion and the peripheral portion of the target object along the circumferential direction thereof.

2. The plasma film forming apparatus of claim 1, wherein the plasma shielding member is located above a position where a thin film formed on a surface of the target object becomes thicker when a film formation is performed without the plasma shielding member by injecting the source gas from the central gas injection hole and the peripheral gas injection holes.

3. The plasma film forming apparatus of claim 1, wherein the plasma shielding member includes one or more ring member.

4. The plasma film forming apparatus of claim 1, wherein the plasma shielding member is made of one material selected from a group consisting of quartz, ceramic, aluminum and semiconductor.

5. The plasma film forming apparatus of claim 1, wherein the gas introduction mechanism includes a central gas nozzle unit having the central gas injection hole and a peripheral gas nozzle unit having the peripheral gas injection holes.

6. The plasma film forming apparatus of claim 5, wherein both the central gas nozzle unit and the peripheral gas nozzle unit have a ring shape.

7. The plasma film forming apparatus of claim 5, wherein the central gas nozzle unit and the peripheral gas nozzle unit are configured such that their gas flow rates are individually controlled.

8. The plasma film forming apparatus of claim 1, wherein the gas introduction mechanism includes a supporting gas nozzle unit for introducing the supporting gas.

9. The plasma film forming apparatus of claim 8, wherein the supporting gas nozzle unit has a gas injection hole for the supporting gas, which injects the gas toward the ceiling plate from a position directly under a central portion of the ceiling plate.

10. The plasma film forming apparatus of claim 1, wherein the gas introduction mechanism includes a supporting gas supply unit installed at the ceiling plate so as to introduce the supporting gas.

11. The plasma film forming apparatus of claim 10, wherein the supporting gas supply unit has a gas passage for the supporting gas installed at the ceiling plate, and a plurality of gas injection holes for the supporting gas installed at a bottom surface of the ceiling plate so as to communicate with the gas passage.

12. The plasma film forming apparatus of claim 11, wherein the gas injection holes for the supporting gas are distributed throughout the bottom surface of the ceiling plate.

13. The plasma film forming apparatus of claim 11, wherein the gas passage for the supporting gas and/or the gas injection holes for the supporting gas are filled with a porous dielectric material having a gas permeable property.

14. The plasma film forming apparatus of claim 10, wherein an introduction amount of the source gas is in a range of about 0.331 sccm/cm² to 0.522 sccm/cm².

15. The plasma film forming apparatus of claim 10, wherein the gas injection holes for the source gas are arranged on the same horizontal plane, and

a distance between the mounting table and the horizontal plane on which the gas injection holes for the source gas are located is set to be about 40 mm or more.

16. The plasma film forming apparatus of claim 1, wherein the mounting table has a heating unit for heating the target object.

17. The plasma film forming apparatus of claim 1, wherein the source gas includes one material selected from a group consisting of TEOS, SiH₄ and Si₂H₆, and

the supporting gas includes one material selected from a group consisting of O₂, NO, NO₂, N₂O and O₃.

18. A plasma film forming method comprising:

introducing a processing gas including a film formation source gas and a supporting gas into an evacuable processing chamber; and

generating plasma by introducing a microwave from a ceiling of the processing chamber and forming a thin film on a surface of a target object installed in the processing chamber,

wherein, when the processing gas is introduced into the processing chamber, the source gas is injected and introduced from above a central portion and a peripheral portion of the target object, and

the plasma is shielded by a plasma shielding member installed above the target object at a position between the central portion and the peripheral portion of the target object, so that the thin film is formed.