SEMICONDUCTOR LIGHT EMITTING DIODE HAVING HIGH EFFICIENCY AND METHOD OF MANUFACTURING THE SAME
First Claim
1. A method of manufacturing a semiconductor light emitting diode, comprising:
- sequentially forming a material layer and a metal layer on a substrate;
forming a metal oxide layer having holes by anodizing the metal layer;
forming holes in the material layer corresponding to the holes of the metal oxide layer;
removing the metal oxide layer; and
sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on an upper part of the material layer with holes formed therein on the substrate after the metal oxide layer is removed.
1 Assignment
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Accused Products
Abstract
Provided is a semiconductor light emitting diode having a textured structure formed on a substrate. In a method of manufacturing the semiconductor light emitting diode, a metal layer is formed on the substrate, and a metal oxide layer having holes is formed by anodizing the metal layer. The metal oxide layer itself can be used as a textured structure pattern, or the textured structure pattern can be formed by forming holes in the substrate or a material layer under the metal oxide layer corresponding to the holes of the metal oxide layer. The manufacture of the semiconductor light emitting diode is completed by sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on the textured structure pattern.
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Citations
13 Claims
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1. A method of manufacturing a semiconductor light emitting diode, comprising:
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sequentially forming a material layer and a metal layer on a substrate; forming a metal oxide layer having holes by anodizing the metal layer; forming holes in the material layer corresponding to the holes of the metal oxide layer; removing the metal oxide layer; and sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on an upper part of the material layer with holes formed therein on the substrate after the metal oxide layer is removed. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of manufacturing a semiconductor light emitting diode having a textured structure, the method comprising:
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forming a metal layer on a substrate; forming a metal oxide layer having holes by anodizing the metal layer; forming holes in the substrate corresponding to the holes of the metal oxide layer; and sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on an upper part of the substrate after the metal oxide layer is removed. - View Dependent Claims (8, 9)
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10. A method of manufacturing a semiconductor light emitting diode having a textured structure, the method comprising:
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forming a metal layer on a substrate; foaming a metal oxide layer having holes by anodizing the metal layer; and sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on the metal oxide layer. - View Dependent Claims (11, 12, 13)
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Specification