METHOD AND STRUCTURE OF MONOLITHICALLY INTEGRATED IC-MEMS OSCILLATOR USING IC FOUNDRY-COMPATIBLE PROCESSES

• US 20100075481A1
• Filed: 07/07/2009
• Published: 03/25/2010
• Est. Priority Date: 07/08/2008
• Status: Abandoned Application

• Current Assignee: Xiao Yang
• Original Assignee: Xiao Yang
• Inventors: Yang, Xiao (Charles)
• Application Number:
  US12/499,029
• Publication Number:
  US 20100075481A1
• Time in Patent Office: Days
• US Class Current: 438/458
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate

Abstract

The present invention relates to integrating an inertial mechanical device on top of an IC substrate monolithically using IC-foundry compatible processes. The IC substrate is completed first using standard IC processes. A thick silicon layer is added on top of the IC substrate. A subsequent patterning step defines a mechanical structure for inertial sensing. Finally, the mechanical device is encapsulated by a thick insulating layer at the wafer level. Compared with the incumbent bulk or surface micromachined MEMS inertial sensors, vertically monolithically integrated inertial sensors provided by embodiments of the present invention have one or more of the following advantages: smaller chip size, lower parasitics, higher sensitivity, lower power, and lower cost.

Claims

1. A method for fabricating a monolithic integrated circuit and MEMS resonator device, the method comprising:

providing a first semiconductor substrate having a first surface region;

forming one or more CMOS integrated circuit device provided on a CMOS integrated circuit device region overlying the first surface region, the CMOS integrated circuit device region having a CMOS surface region;

forming a dielectric layer overlying the CMOS surface region;

joining a second semiconductor substrate having a second surface region to the CMOS surface region by bonding the second surface region to the dielectric layer;

thinning the second semiconductor substrate to a desired thickness while maintaining attachment to the dielectric layer;

forming one or more via structures within one or more portions of the desired thickness of the second semiconductor substrate;

forming a conformal coating of metal material within the one or more via structures; and

forming one or more free standing MEMS structures within one or more portions of the desired thickness of the second semiconductor substrate, the one or more MEMS structures being configured to be supported by one or more members integrally formed on the desired thickness of the second semiconductor substrate to cause the one or more MEMS structures to move in an oscillating manner characterized by a frequency range.

2. The method of claim 1 wherein the dielectric layer has one or more patterned regions.

3. The method of claim 1 wherein the thinning comprises a grinding process to remove a thickness of material from the semiconductor substrate to expose a ground surface region;

and further comprising subjecting the ground surface region to a polishing process to smooth the ground surface region to a predetermined surface roughness; and

monitoring a thickness of the second substrate during either or both the grinding process and/or the polishing process.

4. The method of claim 3 wherein the monitoring comprises using an interferometer process to measure an indication associated with the thickness of the second substrate, the interferometer process using a electromagnetic radiation in an infrared wavelength range.

5. The method of claim 1 further comprising forming one or more via structures within one or more portions of the second semiconductor substrate, the one or more via structures extending from the second surface region to a vicinity of the desired thickness, the one or more via structures being configured as one or more stop structures to form one or more end point regions of the thinning

6. The method of claim 1 wherein the second semiconductor substrate is an SOI substrate comprising a bulk portion, overlying insulating layer, and single crystal device layer;

and wherein the thinning comprises selectively removing the bulk portion of the SOI substrate from the single crystal device layer while maintaining attachment to the dielectric layer.

7. The method of claim 1 wherein the thinning comprises cleaving a portion of the second semiconductor substrate at a cleave region to remove the desired thickness from the second semiconductor substrate, the cleave region being within a vicinity of the desired thickness, the desired thickness being a remaining portion of the second semiconductor substrate attached to the dielectric layer.

8. The method of claim 1 wherein the one or more free standing MEMS structures comprise one or more comb structures, each of the comb structures being configured to be movable from a first position to a second position, at least one of the comb structures being inter-digitated with a second comb structure, the second comb structure being stationary.

9. The method of claim 8 wherein the one comb structure and the second comb structure form a capacitive sensing device, the capacitive sensing device being capable of providing a varying capacitance upon movement of the one or more free standing MEMS structures responding to external acceleration.

10. The method of claim 1 wherein the CMOS device layer is formed using a standing CMOS process from a semiconductor foundry.

11. The method of claim 1 further comprising forming a sacrificial layer overlying the one or more free standing MEMS structures.

12. The method of claim 11 further comprising forming an enclosure layer overlying the sacrificial layer, the enclosure layer having one or more openings to expose one or more portions of the sacrificial layer.

13. The method of claim 12 wherein the enclosure layer comprises a titanium material, the titanium material being activated as a getter layer.

14. The method of claim 12 wherein the enclosure layer is selected from a metal, a semiconductor material, an amorphous silicon material, a dielectric layer, or a combination of these layers.

15. The method of claim 12 further comprising removing the sacrificial layer via an ashing process to form an open region between the one or more free standing MEMS structures and the enclosure layer;

and forming an encapsulating layer overlying the enclosure layer to substantially seal the one or more free standing MEMS structures to form a predetermined environment within the open region.

16. The method of claim 15 wherein the encapsulating layer is selected from a metal layer, a spin on glass, spray on glass, amorphous silicon, a dielectric layer, or any combination of these layers.

17. The method of claim 1 wherein the frequency range is radio frequency range from kilo-hertz to giga-hertz.

18. The method of claim 15 further comprising forming one or more bond pad openings to expose one or more of bond pads coupled to the CMOS device layer.

19. A method of forming a monolithic MEMS and integrated circuit device, the method comprising:

providing a first semiconductor substrate having a first surface region;

forming one or more CMOS integrated circuit device provided on a CMOS integrated circuit device region overlying the first surface region, the CMOS integrated circuit device region having a CMOS surface region;

forming a dielectric layer overlying the CMOS surface region;

joining a second semiconductor substrate having a second surface region to the CMOS surface region by bonding the second surface region to the dielectric layer, the second semiconductor substrate comprising a bulk substrate, an overlying insulating layer, and a single crystal device layer, the single crystal device layer comprising the second surface region;

thinning the second semiconductor substrate to a desired thickness including the single crystal device layer, the insulating layer, and a portion of the bulk substrate while maintaining attachment to the dielectric layer; and

forming one or more MEMS structures within one or more portions of the desired thickness of the second semiconductor substrate, the one or more MEMS structures being configured to be supported by one or more members integrally formed on the desired thickness of the second semiconductor substrate to cause the one or more MEMS structures to move in an oscillating manner characterized by a frequency range.