INTEGRAL PATTERNING OF LARGE FEATURES ALONG WITH ARRAY USING SPACER MASK PATTERNING PROCESS FLOW

• US 20100075503A1
• Filed: 09/19/2008
• Published: 03/25/2010
• Est. Priority Date: 09/19/2008
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: BENCHER, CHRISTOPHER DENNIS, Tang, Jing
• Granted Patent: US 7,709,396 B2
• Time in Patent Office: Days
• US Class Current: 438/703
• CPC Class Codes: H01L 21/3086 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/3088 Process specially adapted to improve the resolution of the mask
• CPC Class Codes: Y10S 438/95 Multilayer mask including nonradiation sensitive layer

Abstract

Embodiments of the present invention pertain to methods of forming patterned features on a substrate having an increased density (i.e. reduced pitch) as compared to what is possible using standard photolithography processing techniques using a single high-resolution photomask while also allowing both the width of the patterned features and spacing (trench width) between the patterned features to vary within an integrated circuit.

Claims

1. A method of forming patterned features on a substrate, the method comprising:

forming a sacrificial structural layer of a core material on the substrate;

forming a protective layer of a protective material on the sacrifical structural layer;

patterning the sacrificial structural layer and the protective layer to form patterned structures and regions of exposed substrate, the patterned structures including at least two narrow patterned structures having a first linewidth and a first spacing and at least one wide patterned structure having a second linewidth which is greater than the first linewidth, the narrow and wide patterned structures each comprising a layer of the protective material over a layer of the core material;

etching the protective material such that the protective material is substantially removed from the at least two narrow patterned structures (leaving behind at least two narrow cores) and a portion of the protective material remains on the at least one wide patterned structure (leaving behind a protective portion on a wide core);

forming a conformal layer of a spacer material over the remaining structures and exposed substrate;

anisotropically etching the conformal layer to expose the at least two narrow cores and regions of exposed substrate; and

removing the at least two narrow cores.

2. The method of claim 1 further comprising:

etching the regions of exposed substrate to a predetermined depth; and

removing remaining spacer material, remaining protective material and remaining core material.

3. The method of claim 1 wherein the step of forming a conformal layer of a spacer material comprises forming a conformal layer of a spacer material, wherein a thickness of the conformal layer is approximately equal to the first linewidth.

4. The method of claim 1 wherein the step of patterning the sacrificial structural layer comprises patterning the sacrificial structural layer, wherein the second linewidth is larger than the first linewidth by at least a factor of three.

5. The method of claim 1 wherein forming a protective layer of protective material comprises forming a layer of silicon oxide.

6. The method of claim 5 wherein forming a protective layer of protective material comprises forming an initial thin layer of silicon-rich silicon oxide over the core material and then forming a bulk layer of silicon oxide over the initial thin layer of silicon-rich silicon oxide.

7. The method of claim 1 wherein forming a protective layer of protective material comprises forming a layer of silicon nitride.

8. The method of claim 1, wherein forming a sacrificial structural layer of a core material comprises forming a sacrificial structural layer of a core material, wherein the core material comprises at least one of polysilicon, hydrogenated amorphous carbon, silicon nitride and silicon oxide.

9. The method of claim 1 wherein forming a sacrificial structural layer of a core material comprises forming a sacrificial structural layer of a core material, wherein the core material comprises hydrogenated amorphous carbon having a atomic composition of between about 10 percent hydrogen to about 60 percent hydrogen.

10. The method of claim 1 wherein forming a conformal layer of a spacer material comprises forming a conformal layer of a spacer material, wherein the spacer material comprises at least one of polysilicon, silicon nitride and silicon oxide.

11. A method of patterning a substrate having a layer of protective material formed over a sacrificial layer of core material using a single high-resolution photomask, the method comprising:

depositing a layer of photoresist over the layer of protective material;

patterning the layer of photoresist by exposing the layer of photoresist to radiation through the single high-resolution photomask and developing the layer of photoresist to form a first pattern defined by the high-resolution photomask, the first pattern including a plurality of narrow structures having a first width and a first pitch and at least one wide structure having a second width greater than the first width;

transferring the first pattern into the layer of protective material and the layer of core material to form patterned stacks of protective material over sacrificial material including a plurality of narrow stacks corresponding to the plurality of narrow structures and at least one wide stack corresponding to the at least one wide structure; and

etching the layer of protective material using a self-limiting isotropic etch process to remove substantially all protective material from the plurality of narrow stacks leaving behind a plurality of narrow cores and leaving protective material on the at least one wide stack.

12. The method of claim 11 further comprising:

forming a conformal layer of a spacer material over the remaining structures and exposed substrate;

etching the conformal layer to expose the plurality of narrow cores while leaving short spacers on each side of the narrow cores and tall spacers on each side of the wide stack;

stripping away the sacrificial structural material in the plurality of narrow stacks leaving short and tall spacers and leaving the wide stack;

using the short and tall spacers and wide stack as a hard mask while etching the substrate to transfer a second pattern into the substrate, a portion of the second pattern having a second pitch that is less than the first pitch; and

removing the short and tall spacers of spacer material and the wide stack.

13. The method of claim 12 wherein the step of forming a conformal layer of a spacer material comprises forming a conformal layer of spacer material, wherein a thickness of the conformal layer on a sidewall of the narrow structures is between about 80% and about 120% of the first line width.

14. The method of claim 12 wherein the step of forming a conformal layer of a spacer material comprises forming a conformal layer of spacer material, wherein a thickness of the conformal layer on a sidewall of the narrow structures is between about 90% and about 110% of the first line width.

15. The method of claim 11 wherein the step of patterning the layer of photoresist comprises patterning the layer of photoresist, wherein the plurality of narrow structures is patterned at or near the resolution limit of a photolithography process.

16. The method of claim 11 wherein the layer of protective material formed over the sacrificial layer has a thickness of at least twice the first width.

17. The method of claim 11 wherein the self-limiting isotropic etch process comprises two or more cycles.

18. The method of claim 11 wherein the self-limiting isotropic etch process comprises an HF vapor etch.

19. The method of claim 11 wherein the self-limiting isotropic etch process comprises flowing at least two precursors:

NF₃ and at least one of NH₃ and H₂.

20. The method of claim 11 wherein the layer of protective material comprises silicon oxide and the core material comprises hydrogenated amorphous carbon.

21. The method of claim 12 wherein the second pitch is half of the first pitch.

22. The method of claim 12 wherein both variable width lines and variable width spaces are produced.