RADIATION DETECTION SYSTEM USING SOLID-STATE DETECTOR DEVICES

• US 20100078570A1
• Filed: 09/22/2009
• Published: 04/01/2010
• Est. Priority Date: 10/26/2001
• Status: Abandoned Application

• Current Assignee: Innovative American Technology, Inc.
• Original Assignee: Innovative American Technology, Inc.
• Inventors: FRANK, DAVID L.
• Application Number:
  US12/564,470
• Publication Number:
  US 20100078570A1
• Time in Patent Office: Days
• US Class Current: 250/370.50
• CPC Class Codes: G01T 3/08 with semiconductor detectors

Abstract

A neutron detection device (100) includes a semiconductor substrate including a gallium arsenide substrate region (102) having a back surface, and a high purity gallium arsenide active region (104) having a front surface. A back contact layer (118) is disposed on the back surface for providing a first voltage potential at the back surface. Elongated tube cavities extend from respective openings in the front surface into the active region (104) and almost through, but not totally through, the active region. A front contact layer is disposed on the front surface for providing a second voltage potential at the front surface. Neutron reactive material, e.g., pulverized Boron-10 powder, fills the elongated tube cavities to a high packing density. Optionally, spherical holes are formed into the substrate. The spherical holes are filled with neutron reactive material to enhance the efficiency of the neutron detection device.

Claims

1. A neutron detection device, comprising:

a semiconductor substrate including

a substrate region having a back surface; and

an active region having a front surface;

a back contact layer disposed on the back surface for providing a first voltage potential at the back surface;

a plurality of elongated tube cavities extending from a plurality of respective openings in the front surface and continuing into the active region and almost through, but not totally through, the active region, wherein a center to center distance between each elongated tube is between 5 and 20 microns;

a front contact layer disposed on the front surface for providing a second voltage potential at the front surface, wherein the active region exhibits an internal electric field causing free charges to separate and drift across the active region; and

neutron reactive material filling the plurality of elongated tube cavities.

2. The neutron detection device of claim 1, further comprising:

a neutron reactive coating layer, including a mixture of neutron reactive material and a polymer base vehicle, disposed on the front contact layer and covering the openings of the plurality of filled elongated tube cavities thereby securely packing the neutron reactive material filling the plurality of elongated tube cavities.

3. The neutron detection device of claim 2, wherein the neutron reactive coating layer comprises Boron-10 mixed with a polymer base vehicle, and wherein the neutron reactive coating layer is a polymer coat bonded to the front contact layer and to the neutron reactive material at the openings of, and filling, the plurality of elongated tube cavities thereby securely packing the neutron reactive material filling the plurality of elongated tube cavities.

4. The neutron detection device of claim 1, wherein the neutron reactive material filling the plurality of elongated tube cavities comprises Boron-10.

5. The neutron detection device of claim 1, wherein the neutron reactive material filling the plurality of elongated tube cavities comprises Boron-10 powder having granules of a mean diameter less than or equal to approximately 1 micron, the Boron-10 powder filling the plurality of elongated tube cavities at a high packing density.

6. The neutron detection device of claim 1, wherein the active region comprises a layer of significantly increased thickness to significantly increase the length of the plurality of elongated tube cavities extending from the plurality of respective openings in the front surface and continuing into the active region and almost through, but not totally through, the active region.

7. A neutron radiation sensor system comprising an array of neutron detection devices, each such neutron detection device comprising:

a semiconductor substrate including

a substrate region having a back surface; and

an active region having a front surface, wherein the active region exhibits an internal electric field causing free charges to separate and drift across the active region;

a back contact layer disposed on the back surface for providing a first voltage potential at the back surface;

a plurality of elongated tube cavities extending from a plurality of respective openings in the front surface and continuing into the active region and almost through, but not totally through, the active region, wherein a center to center distance between each elongated tube is between 5 and 20 microns;

a front contact layer disposed on the front surface for providing a second voltage potential at the front surface; and

neutron reactive material filling the plurality of elongated tube cavities.

8. The neutron radiation sensor system of claim 7, further comprising:

a neutron reactive coating layer, including a mixture of neutron reactive material and a polymer base vehicle, disposed on the front contact layer and covering the openings of the plurality of filled elongated tube cavities thereby securely packing the neutron reactive material filling the plurality of elongated tube cavities.

9. The neutron radiation sensor system of claim 8, wherein the neutron reactive coating layer comprises Boron-10 mixed with a polymer base vehicle, and wherein the neutron reactive coating layer is a polymer coat bonded to the front contact layer and to the neutron reactive material at the openings of, and filling, the plurality of elongated tube cavities thereby securely packing the neutron reactive material filling the plurality of elongated tube cavities.

10. The neutron radiation sensor system of claim 7, wherein the neutron reactive material filling the plurality of elongated tube cavities comprises Boron-10.

11. The neutron radiation sensor system of claim 7, further comprising:

a data collection system, communicatively coupled with each neutron detection device of the array of neutron detection devices, to collect signals from the array of neutron detection devices, the collected signals representing whether each neutron detection device has detected neutron radiation.

12. The neutron radiation sensor system of claim 11, further comprising:

a remote monitoring system, communicatively coupled with the data collection system, to remotely monitor the collected signals from the array of neutron detection devices and thereby remotely determine whether one or more neutron detection devices from the array have detected neutron radiation.

13. The neutron radiation sensor system of claim 7, wherein the neutron reactive material filling the plurality of elongated tube cavities comprises Boron-10 powder having granules of a mean diameter less than or equal to approximately 1 micron, the Boron-10 powder providing a high packing density in the plurality of elongated tube cavities.

14. The neutron radiation sensor system of claim 7, wherein the active region comprises a layer of significantly increased thickness to significantly increase the length of the plurality of elongated tube cavities extending from the plurality of respective openings in the front surface and continuing into the active region and almost through, but not totally through, the active region.

15. The neutron radiation sensor system of claim 7, wherein the semiconductor substrate of each such neutron detection device comprises gallium arsenide or germanium;

and wherein the active region of the semiconductor substrate for each such neutron detection device, respectively, comprises a high purity gallium arsenide active region or a high purity germanium active region.

16. An apparatus for detecting neutrons comprising:

a semiconductor substrate having first and second opposed surfaces;

a layered metal arrangement disposed on the first surface of the semiconductor substrate and forming a rectifying junction;

a low resistivity contact layer disposed on the second opposed surface of said semiconductor substrate;

a voltage source connected between said layered metal arrangement and said low resistivity contact layer for reverse-biasing said rectifying junction;

one or more spherical holes into the semiconductor substrate, the one or more spherical holes being of one or more diameters respectively;

a neutron responsive layer within the one or more spherical holes; and

a thin composite layer comprised of a modifier and a neutron responsive layer disposed on both the low resistivity contact layer and the layered metal arrangement for slowing neutrons and responsive to energetic neutrons incident thereon for providing positive charged particles to the semiconductor substrate, where the thin composite layer being comprised of elemental, or any compound of, .sup.10 B, .sup.6 Li, .sup.6 LiF, U, or Gd.

17. The apparatus of claim 16, wherein the specified thickness of the modifier and neutron responsive layer is selected to obtain a maximum intrinsic efficiency which is dependent on incident energy associated with incident neutrons.

18. The apparatus of claim 16, wherein the thin composite layer comprises a polymer comprising a high-density polyethylene.

19. The apparatus of claim 16, wherein at least one spherical hole has a width and depth in the semiconductor substrate, and wherein first and second charged particles have respective first and second ranges of travel in the neutron responsive layer, and wherein the width of the at least one spherical hole is on the order of the sum of the ranges of the first and second charged particles.

20. The apparatus of claim 16, wherein at least one spherical hole is generally cylindrical in shape and has a longitudinal axis aligned generally perpendicular to the first surface of the semiconductor substrate.

21. The apparatus of claim 16, wherein the first surface of the semiconductor substrate includes cavities arranged in a spaced manner in the semiconductor substrate.