INSULATED GATE TYPE TRANSISTOR AND DISPLAY DEVICE

• US 20100078633A1
• Filed: 04/30/2008
• Published: 04/01/2010
• Est. Priority Date: 05/11/2007
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Watanabe, Tomohiro
• Granted Patent: US 8,962,457 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A transistor comprises an active layer of an oxide containing at least one element selected from In, Ga and Zn. The active layer is formed such that a desorption gas monitored as a water molecule by a temperature programmed desorption analysis is 1.4/nm³ or less.

Claims

1. A transistor comprising:

an active layer of an oxide containing at least one element selected from In, Ga and Zn, wherein the active layer is formed such that a desorption gas monitored as a water molecule by a temperature programmed desorption analysis is 1.4/nm³ or less.

2. The transistor according to claim 1, wherein

the active layer is an oxide formed to contain In—

Ga—

Zn—

O.

3. The transistor according to claim 1, wherein

the active layer is amorphous.

4. A display device comprising a display element of which electrode is connected to a drain or source of the transistor according to claim 1.

5. The display device according to claim 4, wherein

the display element is an electro-luminescence element.

6. The display device according to claim 4, wherein

the display element is a liquid crystal cell.

7. The display device according to claim 4, wherein

a plurality of the display elements or the transistors are arranged two-dimensionally on a substrate.

8. A manufacturing method of a transistor comprising:

an active layer of an oxide containing at least one element selected from In, Ga and Zn, wherein the method comprising a step of;

forming the active layer such that, after forming the active layer, a desorption gas monitored as a water molecule by a temperature programmed desorption analysis is 1.4/nm³ or less.

9. The manufacturing method according to claim 8, wherein

the active layer is an oxide formed to contain In—

Ga—

Zn—

O.

10. The manufacturing method according to claim 8, wherein

the active layer is amorphous.