SEMICONDUCTOR DEVICE
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Abstract
One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, cadmium-lead.
26 Citations
48 Claims
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1-20. -20. (canceled)
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21. A method of forming a channel, comprising:
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providing at least one precursor composition including one or more precursor compounds that include zinc oxide, cadmium oxide, germanium oxide, tin oxide, lead oxide, zinc-germanium oxide, zinc-lead oxide, cadmium-germanium oxide, cadmium-tin oxide, cadmium-lead oxide; and depositing the channel including the precursor composition to form a multicomponent oxide from the precursor composition to electrically couple a drain electrode and a source electrode. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29)
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30. A method of manufacturing a semiconductor device, comprising:
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providing a drain electrode; providing a source electrode; step for providing at least one precursor composition including one or more precursor compounds that include;
zinc oxide, cadmium oxide, germanium oxide, tin oxide, lead oxide, zinc-germanium oxide, zinc-lead oxide, cadmium-germanium oxide, cadmium-tin oxide, cadmium-lead oxide;step for depositing a channel including depositing the precursor composition to form a multicomponent oxide from the precursor composition to electrically couple the drain electrode and the source electrode; providing a gate electrode; and providing a gate dielectric positioned between the gate electrode and the channel. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37)
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38. A semiconductor device formed by steps, comprising:
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providing a drain electrode; providing a source electrode; providing a precursor composition that includes one or more precursor compounds that include;
zinc oxide, cadmium oxide, germanium oxide, tin oxide, lead oxide, zinc-germanium oxide, zinc-lead oxide, cadmium-germanium oxide, cadmium-tin oxide, cadmium-lead oxide;depositing a channel including the precursor composition to form a multicomponent oxide from the precursor composition to electrically couple the drain electrode and the source electrode; providing a gate electrode; and providing a gate dielectric positioned between the gate electrode and the channel. - View Dependent Claims (39, 40, 41, 42, 43, 44)
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45. A method for operating a semiconductor device, comprising:
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providing a semiconductor device that includes a source electrode a drain electrode, and a channel to electrically couple the source electrode and the drain electrode, a gate electrode separated from the channel by a gate dielectric, wherein the channel includes a multicomponent oxide selected from at least one metal cation from group 12, at least one metal cation from group 14, wherein group 12 cations include Zn and Cd, and group 14 cations include Ge, Sn, and Pb, to form at least one of a three-component oxide, a four-component oxide, a five-component oxide, and a two-component oxide that includes zinc-germanium oxide, zinc-lead oxide, cadmium-germanium oxide, cadmium-tin oxide, cadmium-lead oxide; and applying a voltage to the gate electrode to effect a flow of electrons through the channel. - View Dependent Claims (46, 47)
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48-57. -57. (canceled)
Specification