Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device

• US 20100078670A1
• Filed: 09/30/2009
• Published: 04/01/2010
• Est. Priority Date: 10/01/2008
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Seung-Jae, Youn, Sun-Pil, Kim, Yu-Sik, Hwang, Seong-Deok
• Granted Patent: US 8,110,843 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/02 Bonding areas; Manufacturing methods related thereto
• CPC Class Codes: H01L 2224/02371 connecting the bonding area on a surface of the semiconductor or solid-state body with another surface of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05026 the internal layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05169 Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05171 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05186 with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05666 : Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05669 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05671 : Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05684 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/06102 : the bonding areas being at different heights
• CPC Class Codes: H01L 2224/13 : of an individual bump connector
• CPC Class Codes: H01L 2224/48091 : Arched
• CPC Class Codes: H01L 24/02 : Bonding areas on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0542 : 12th Group
• CPC Class Codes: H01L 2924/0543 : 13th Group
• CPC Class Codes: H01L 2924/0544 : 14th Group
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 33/20 : with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/24 : of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/405 : Reflective materials
• CPC Class Codes: H01L 33/44 : characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 : Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/48 : characterised by the semiconductor body packages

Abstract

Provided is a light emitting element, a light emitting device including the same, and fabrication methods of the light emitting element and light emitting device. The light emitting device comprises a substrate, a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked, a first electrode which is electrically connected with the first conductive layer; and a second electrode which is electrically connected with the second conductive layer and separated apart from the first electrode, wherein at least a part of the second electrode is connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the substrate.

Claims

1. A light emitting element comprising:

a substrate;

a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked;

a first electrode which is electrically connected with the first conductive layer; and

a second electrode which is electrically connected with the second conductive layer and separated apart from the first electrode, wherein at least a part of the second electrode is connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the substrate.

2. The light emitting element of claim 1, wherein the width of the first conductive layer is larger than the width of the second conductive layer and the width of the light emitting layer, and the first conductive layer protrudes on sides more than the second conductive layer or the light emitting layer, and the first electrode is formed on a protruding region of the first conductive layer.

3. The light emitting element of claim 2, wherein the second electrode is separated apart form the first electrode and surrounds the first electrode.

4. The light emitting element of claim 1, wherein each of the bottom width of the light emitting structure or the substrate is larger than each of the top width of the light emitting structure or the substrate to have a side slope.

5. The light emitting element of claim 1, further comprising a dome pattern which is formed on the substrate and the light emitting structure conformally along the dome pattern.

6. The light emitting element of claim 5, wherein the dome pattern is a convex dome pattern or a concave dome pattern.

7. The light emitting element of claim 1, wherein n layers (n is a natural number greater than 1) of dielectric layers are formed between a sidewall of the substrate and the second electrode, and m layers (m is a natural number smaller than n) of dielectric layers are formed between a sidewall of the light emitting structure and the second electrode.

8. The light emitting element of claim 1, wherein the light emitting structure is formed in a cylinder shape.

9. The light emitting element of claim 1, wherein the light emitting structure is formed on one side of the substrate and the other side of the substrate and a part of the second electrode are formed on a same plane.

10. A light emitting element comprising:

a substrate;

a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked, wherein the width of the first conductive layer is larger than the width of the second conductive layer and the width of the light emitting layer, and the first conductive layer protrudes on sides more than the second conductive layer or the light emitting layer;

a first electrode which is electrically connected with the first conductive layer and formed on a protruding region of the first conductive layer; and

a second electrode which is electrically connected with the second conductive layer, separated apart from the first electrode and surrounding the first electrode.

11. The light emitting element of claim 10, wherein at least a part of the second electrode is connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the substrate.

12. The light emitting element of claim 11, wherein n layers (n is a natural number greater than 1) of dielectric layers are formed between a sidewall of the substrate and the second electrode and m layers (m is a natural number smaller than n) of dielectric layers are formed between a sidewall of the light emitting structure and the second electrode.

13. The light emitting element of claim 10, wherein the light emitting structure is formed on one side of the substrate and the other side of the substrate and a part of the second electrode are formed on a same plane.

14. A light emitting device comprising:

a light emitting element comprising;

a substrate;

a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked;

a first electrode which is electrically connected with the first conductive layer; and

a second electrode which is electrically connected with the second conductive layer and separated apart from the first electrode, wherein at least a part of the second electrode is connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the substrate.

15. The light emitting device of claim 14, wherein the width of the first conductive layer is larger than the width of the second conductive layer and the width of the light emitting layer, and the first conductive layer protrudes on sides more than the second conductive layer or the light emitting layer, and the first electrode is formed on a protruding region of the first conductive layer.

16. The light emitting device of claim 14, wherein each of the bottom width of the light emitting structure or the substrate is larger than each of the top width of the light emitting structure or the substrate to have a side slope.

17. The light emitting device of claim 14, further comprising a dome pattern which is formed on the substrate and the light emitting structure conformally along the dome pattern.

18. The light emitting device of claim 14, wherein n layers (n is a natural number greater than 1) of dielectric layers are formed between a sidewall of the substrate and the second electrode, and m layers (m is a natural number smaller than n) of dielectric layers are formed between a sidewall of the light emitting structure and the second electrode.

19. The light emitting device of claim 14, wherein the light emitting structure is formed in a cylinder shape.

20. The light emitting device of claim 14, wherein the light emitting structure is formed on one side of the substrate and the other side of the substrate and a part of the second electrode are formed on a same plane.