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Semiconductor structure with an electric field stop layer for improved edge termination capability

  • US 20100078755A1
  • Filed: 09/30/2008
  • Published: 04/01/2010
  • Est. Priority Date: 09/30/2008
  • Status: Active Grant
First Claim
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1. An edge termination structure for a semiconductor device, comprising:

  • a first layer on a semiconductor substrate;

    a second layer connected to the first layer and including a plurality of sources, wherein a second dopant concentration of the second layer is higher than a first dopant concentration of the first layer; and

    an electric field stop layer at a periphery of the semiconductor device having a third dopant concentration higher than the first dopant concentration of the first layer and approximately the same as the second dopant concentration of the second layer.

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