SEMICONDUCTOR DEVICE

• US 20100078787A1
• Filed: 09/28/2009
• Published: 04/01/2010
• Est. Priority Date: 10/01/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAKUBO, Yuto
• Granted Patent: US 9,196,593 B2
• Time in Patent Office: Days
• US Class Current: 257/679
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 23/642 Capacitive arrangements H01L23/49589, H01L23/645, H01L23/647, H01L23/66 take precedence; capacitive effects between wiring layers on the semiconductor body H01L23/5222
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

To provide a semiconductor device whose reliability is improved by increase in resistance to external stress and electrostatic discharge with reduction in thickness and size achieved. An IC chip provided with an integrated circuit and a resonant capacitor portion, an antenna provided over the IC chip, and a conductive blocking body provided so as to at least partially overlap the antenna with an insulating film interposed therebetween are included. A capacitor is formed with a layered structure of the antenna, the insulating film over the antenna, and the conductive blocking body over the insulating film.

Claims

1. A semiconductor device comprising:

a first conductive blocking body;

a first insulating film provided over the first conductive blocking body;

an IC chip provided with an integrated circuit and a resonant capacitor portion including a wiring, the IC chip being provided over the first insulating film;

an antenna provided over the IC chip;

a second insulating film provided over the antenna; and

a second conductive blocking body provided over the second insulating film,

wherein the first conductive blocking body and the antenna are provided so as to be at least partially overlapped with each other with the first insulating film interposed therebetween,

wherein the second conductive blocking body and the antenna are provided so as to be at least partially overlapped with each other with the second insulating film interposed therebetween, and

wherein the wiring, the second insulating film, and the second conductive blocking body constitute a capacitor.

2. The semiconductor device according to claim 1,

wherein the first insulating film and the second insulating film each include an impact diffusion layer.

3. The semiconductor device according to claim 2,

wherein the impact diffusion layer is a structure body in which a fibrous body is impregnated with an organic resin.

4. A semiconductor device comprising:

a first conductive blocking body;

a first insulating film provided over the first conductive blocking body;

an IC chip provided with an integrated circuit, the IC chip being provided over the first insulating film;

an antenna provided over the IC chip;

a second insulating film provided over the antenna; and

a second conductive blocking body provided over the second insulating film,

wherein the first conductive blocking body and the antenna are provided so as to be at least partially overlapped with each other with the first insulating film interposed therebetween,

wherein the second conductive blocking body and the antenna are provided so as to be at least partially overlapped with each other with the second insulating film interposed therebetween,

wherein the first conductive blocking body, the first insulating film, and the antenna constitute a first capacitor, and

wherein the second conductive blocking body, the second insulating film, and the antenna constitute a second capacitor.

5. The semiconductor device according to claim 4,

wherein the first insulating film and the second insulating film each include an impact diffusion layer.

6. The semiconductor device according to claim 5,

wherein the impact diffusion layer is a structure body in which a fibrous body is impregnated with an organic resin.

7. A semiconductor device comprising:

an IC chip provided with an integrated circuit;

an antenna provided over the IC chip; and

a conductive blocking body provided so as to at least partially overlap the antenna with an insulating film interposed therebetween,

wherein the antenna, the insulating film over the antenna, and the conductive blocking body over the insulating film constitute a first capacitor.

8. The semiconductor device according to claim 7,

wherein the IC chip is further provided with a resonant capacitor portion.

9. The semiconductor device according to claim 8,

wherein the resonant capacitor portion includes a wiring, and

wherein the resonant capacitor portion, the insulating film, and the conductive blocking body constitute a second capacitor.

10. The semiconductor device according to claim 7,

wherein the insulating film includes an impact diffusion layer.

11. A semiconductor device comprising:

a conductive blocking body;

an insulating film provided over the conductive blocking body;

an IC chip provided with an integrated circuit, the IC chip being provided over the insulating film; and

an antenna provided over the IC chip,

wherein the conductive blocking body and the antenna are provided so as to be at least partially overlapped with each other with the insulating film interposed therebetween, and

wherein the conductive blocking body, the insulating film, and the antenna constitute a first capacitor.

12. The semiconductor device according to claim 11,

wherein the IC chip is further provided with a resonant capacitor portion.

13. The semiconductor device according to claim 12,

wherein the resonant capacitor portion includes a wiring, and

wherein the resonant capacitor portion, the insulating film, and the conductive blocking body constitute a second capacitor.

14. The semiconductor device according to claim 11,

wherein the insulating film includes an impact diffusion layer.

15. A semiconductor device comprising:

an IC chip provided with an integrated circuit;

an antenna provided over the IC chip;

an insulating film provided so as to surround the IC chip and the antenna; and

a conductive blocking body provided so as to surround the insulating film,

wherein the antenna, the insulating film, and the conductive blocking body constitute a first capacitor.

16. The semiconductor device according to claim 15,

wherein the IC chip is further provided with a resonant capacitor portion.

17. The semiconductor device according to claim 16,

wherein the resonant capacitor portion includes a wiring, and

wherein the resonant capacitor portion, the insulating film, and the conductive blocking body constitute a second capacitor.

18. The semiconductor device according to claim 15,

wherein the insulating film includes an impact diffusion layer.