CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20100078833A1
• Filed: 09/28/2009
• Published: 04/01/2010
• Est. Priority Date: 09/30/2008
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Sanyo Semiconductor Company Limited (ON Semiconductor Corporation), Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: YOSHIBA, Shigeharu, NAKAZATO, Isao, SEKIBATA, Takashi
• Granted Patent: US 9,035,473 B2
• Time in Patent Office: Days
• US Class Current: 257/787
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/4809 Loop shape
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/48599 Principal constituent of the connecting portion of the wire connector being Gold (Au)
• CPC Class Codes: H01L 2224/48699 Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/85 using a wire connector
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/295 containing a filler H01L23/296 takes precedence
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/1815 : Shape
• CPC Class Codes: H01L 2924/20751 : larger or equal to 10 microns less than 20 microns
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

Provided are a thin circuit device with show-through of thin metal wires prevented and a method of manufacturing the circuit device. A circuit device mainly includes: a substrate including a first substrate and second substrates; pads formed respectively on upper surfaces of the second substrates; a semiconductor element fixed on an upper surface of the first substrate; thin metal wires each connecting the semiconductor elements and a corresponding one of the pads; and a sealing resin with which the semiconductor element and the thin metal wires are covered, and which thereby seals the circuit device with the semiconductor element and the thin metal wires disposed therein. Furthermore, filler particles located in the uppermost portion of the sealing resin are covered with a resin material constituting the sealing resin.

Claims

1. A circuit device comprising:

a semiconductor element;

a conductive member which is connected to the semiconductor element via a thin metal wire; and

a sealing resin which is made of a resin material mixed with filler particles and which seals the circuit device with the semiconductor element and the thin metal wire disposed therein, wherein

a thickness of a portion, covering a top portion of the thin metal wire, of the sealing resin is made smaller than a maximum diameter of the filler particles, and

the filler particles located in an uppermost portion of the sealing resin are covered with the resin material.

2. The circuit device according to claim 1, wherein the thickness of the portion, covering the top portion of the thin metal wire, of the sealing resin is not more than 40 μ

m.

3. The circuit device according to claim 2, wherein a surface of the sealing resin is a textured surface.

4. The circuit device according to claim 3, wherein the filler particles each have a spherical shape.

5. The circuit device according to claim 4, wherein the filler particles are not exposed from a principal surface of the sealing resin.

6. The circuit device according to claim 5, wherein

the conductive member is a conductive pattern formed on a principal surface of a substrate, and

the sealing resin is formed so as to cover the principal surface of the substrate.

7. The circuit device according to claim 6, wherein

an identification mark is engraved in the principal surface of the sealing resin by partially removing the sealing resin by laser irradiation, and

a depth of the identification mark is not more than 10 μ

m.

8. A method of manufacturing a circuit device, the method comprising the steps of:

connecting an electrode formed on an upper surface of a semiconductor element to a conductive member via a thin metal wire; and

covering the semiconductor element and the thin metal wire with a sealing resin by injection molding using a mold, the sealing resin being made of a resin material mixed with filler particles, wherein

in the covering step, a thickness of a portion, covering a top portion of the thin metal wire, of the sealing resin is made smaller than a maximum diameter of the filler particles, and

the filler particles located in an uppermost portion of the sealing resin are covered with the resin material.

9. The method of manufacturing a circuit device according to claim 8, wherein transfer molding is performed in the covering step, the transfer molding employing a thermosetting resin as the resin material.

10. The method of manufacturing a circuit device according to claim 9, wherein an inner wall of the mold is covered with a release sheet in the covering step.

11. The method of manufacturing the circuit device according to claim 10, wherein a surface, facing inward, of the release sheet is a textured surface.

12. The method of manufacturing the circuit device according to claim 11, the method further comprising the step of

engraving an identification mark in a principal surface of the sealing resin by partially removing the sealing resin by laser irradiation, wherein

a depth of the identification mark is not more than 10 μ

m.