FABRICATING METHOD OF MAGNETORESISTIVE ELEMENT, AND STORAGE MEDIUM
First Claim
1. A fabricating method of a magnetoresistive element comprising, on a substrate, a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer located between the magnetization fixed layer and the magnetization free layer, the method including the steps of:
- depositing the magnetization fixed layer;
depositing the tunnel barrier layer on the magnetization fixed layer; and
depositing the magnetization free layer on the tunnel barrier layer;
whereinthe step of depositing the magnetization fixed layer has a deposition step of depositing a ferromagnetic layer containing Co(cobalt) atom, Fe(iron) atom, and B(boron) atom by co-sputtering method using a first target containing Co(cobalt) atom, Fe(iron) atom, and B(boron) atom, and a second target containing Co (cobalt) atom and Fe(iron) atom, the second target having different B(boron) atom content from that of the first target (however, the second target includes a case where B(boron) atom content is zero).
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Abstract
The present invention provides a fabricating method of a magnetoresistive element having an MR ratio higher than a conventional MR ratio. In a step of depositing a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer on a substrate using a sputtering method in one embodiment of the present invention, the step of depositing the magnetization fixed layer deposits a ferromagnetic layer containing Co atoms, Fe atoms, and B atoms by a co-sputtering method using a first target containing Co atoms, Fe atoms and B atoms, and a second target having different B atom content from that of the first target.
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Citations
22 Claims
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1. A fabricating method of a magnetoresistive element comprising, on a substrate, a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer located between the magnetization fixed layer and the magnetization free layer, the method including the steps of:
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depositing the magnetization fixed layer; depositing the tunnel barrier layer on the magnetization fixed layer; and depositing the magnetization free layer on the tunnel barrier layer;
whereinthe step of depositing the magnetization fixed layer has a deposition step of depositing a ferromagnetic layer containing Co(cobalt) atom, Fe(iron) atom, and B(boron) atom by co-sputtering method using a first target containing Co(cobalt) atom, Fe(iron) atom, and B(boron) atom, and a second target containing Co (cobalt) atom and Fe(iron) atom, the second target having different B(boron) atom content from that of the first target (however, the second target includes a case where B(boron) atom content is zero). - View Dependent Claims (2, 3, 4, 5)
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6. A fabricating method of a magnetoresistive element comprising, on a substrate, a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer located between the magnetization fixed layer and the magnetization free layer, the method including the steps of:
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depositing the magnetization fixed layer; depositing the tunnel barrier layer on the magnetization fixed layer; and depositing the magnetization free layer on the tunnel barrier layer;
whereinthe step of depositing the magnetization fixed layer has; a deposition step of depositing an amorphous ferromagnetic layer containing Co (cobalt) atoms, Fe (iron) atoms, and B (boron) atoms by a co-sputtering method using a first target containing Co (cobalt) atoms, Fe (iron) atoms, and B (boron) atoms, and a second target containing Co (cobalt) atoms and Fe (iron) atoms, the second target having different B (boron) atom content from that of the first target (however, the second target includes a case where B (boron) atom content is zero); and a phase-change step of phase-changing the amorphous ferromagnetic layer to a crystalline ferromagnetic layer. - View Dependent Claims (7, 8, 9, 10, 11)
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12. A storage medium for storing a control program configured to let a computer execute a fabricating method of a magnetoresistive element comprising, on a substrate, a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer located between the magnetization fixed layer and the magnetization free layer, the method including the steps of:
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depositing the magnetization fixed layer; depositing the tunnel barrier layer on the magnetization fixed layer; and depositing the magnetization free layer on the tunnel barrier layer;
whereinthe step of depositing the magnetization fixed layer has a deposition step of depositing a ferromagnetic layer containing Co (cobalt) atoms, Fe (iron) atoms, and B (boron) atoms by a co-sputtering method using a first target containing Co (cobalt) atoms, Fe (iron) atoms, and B (boron) atoms, and a second target containing Co (cobalt) atoms and Fe (iron) atoms, the second target having different B (boron) atom content from that of the first target (however, the second target includes a case where B (boron) atom content is zero). - View Dependent Claims (13, 14, 15, 16)
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17. A storage medium for storing a control program configured to let a computer execute a fabricating method of a magnetoresistive element comprising, on a substrate, a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer located between the magnetization fixed layer and the magnetization free layer, the method including the steps of:
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depositing the magnetization fixed layer; depositing the tunnel barrier layer on the magnetization fixed layer; and depositing the magnetization free layer on the tunnel barrier layer;
whereinthe step of depositing the magnetization fixed layer has; a deposition step of depositing an amorphous ferromagnetic layer containing Co (cobalt) atoms, Fe (iron) atoms, and B (boron) atoms by a co-sputtering method using a first target containing Co (cobalt) atoms, Fe (iron) atoms, and B (boron) atoms, and a second target containing Co (cobalt) atoms and Fe (iron) atoms, the second target having different B (boron) atom content from that of the first target (however, the second target includes a case where B (boron) atom content is zero); and a phase-change step of phase-changing the amorphous ferromagnetic layer to a crystalline ferromagnetic layer. - View Dependent Claims (18, 19, 20, 21, 22)
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Specification