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FABRICATING METHOD OF MAGNETORESISTIVE ELEMENT, AND STORAGE MEDIUM

  • US 20100080894A1
  • Filed: 09/01/2009
  • Published: 04/01/2010
  • Est. Priority Date: 09/29/2008
  • Status: Abandoned Application
First Claim
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1. A fabricating method of a magnetoresistive element comprising, on a substrate, a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer located between the magnetization fixed layer and the magnetization free layer, the method including the steps of:

  • depositing the magnetization fixed layer;

    depositing the tunnel barrier layer on the magnetization fixed layer; and

    depositing the magnetization free layer on the tunnel barrier layer;

    whereinthe step of depositing the magnetization fixed layer has a deposition step of depositing a ferromagnetic layer containing Co(cobalt) atom, Fe(iron) atom, and B(boron) atom by co-sputtering method using a first target containing Co(cobalt) atom, Fe(iron) atom, and B(boron) atom, and a second target containing Co (cobalt) atom and Fe(iron) atom, the second target having different B(boron) atom content from that of the first target (however, the second target includes a case where B(boron) atom content is zero).

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