Efficient Body Contact Field Effect Transistor with Reduced Body Resistance
First Claim
1. A method for forming a body contacted semiconductor-on-insulator transistor comprising:
- providing a first semiconductor layer over an insulating layer, where the first semiconductor layer comprises a body contact region, a body access region that is adjacent to the body contact region, and an active region that is adjacent to the body access region;
forming a semiconductor-on-insulator transistor in the active region by forming an etched metal gate structure over the first semiconductor layer, where the etched metal gate structure comprises;
a first portion formed over the active region with source and drain regions formed in the active region on opposite sides of the first portion, anda second portion formed over at least part of the body access region;
implanting ions at a non-perpendicular angle into an implant region in the body access region to encroach under the second portion of the etched metal gate structure; and
forming silicide over the etched metal gate structure, the body contact region, and the implant region.
19 Assignments
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Accused Products
Abstract
A method for forming a body contacted SOI transistor includes forming a semiconductor layer (103) having a body contact region (120), a body access region (121), and an active region (122). An SOI transistor is formed in the active region by etching a metal gate structure (107, 108) to have a first portion (130) formed over the active region, and a second portion (131) formed over at least part of the body access region. By implanting ions (203, 301) at a non-perpendicular angle into an implant region (204, 302) in the body access region so as to encroach toward the active region and/or under the second portion of the etched metal gate structure, silicide (306) may be subsequently formed over the body contact region and the implant region, thereby reducing formation of a depletion region (308) in the body access region.
28 Citations
20 Claims
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1. A method for forming a body contacted semiconductor-on-insulator transistor comprising:
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providing a first semiconductor layer over an insulating layer, where the first semiconductor layer comprises a body contact region, a body access region that is adjacent to the body contact region, and an active region that is adjacent to the body access region; forming a semiconductor-on-insulator transistor in the active region by forming an etched metal gate structure over the first semiconductor layer, where the etched metal gate structure comprises; a first portion formed over the active region with source and drain regions formed in the active region on opposite sides of the first portion, and a second portion formed over at least part of the body access region; implanting ions at a non-perpendicular angle into an implant region in the body access region to encroach under the second portion of the etched metal gate structure; and forming silicide over the etched metal gate structure, the body contact region, and the implant region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of making a semiconductor device, comprising:
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providing a substrate having a semiconductor layer and an insulating layer, wherein the semiconductor layer has a top surface and overlies the insulating layer; doping an active region of the semiconductor layer to a first conductivity level; doping a body access region of the semiconductor layer that is adjacent to the active region to a second conductivity level; doping a body contact region of the semiconductor layer that is adjacent to the body access region to a third conductivity level; forming a first gate insulating layer on the top surface; forming a polysilicon gate layer over the first gate insulating layer; selectively etching the polysilicon gate layer to form an etched gate structure having a first portion overlying the active region with source and drain regions formed in the active region on opposite sides of the first portion, and a second portion formed over at least part of the body access region; implanting ions at a non-perpendicular angle into an implant region in the body access region to encroach under the second portion of the etched gate structure; and forming silicide over the etched gate structure, the body contact region, and the implant region. - View Dependent Claims (12, 13, 14, 15, 16, 19, 20)
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17. A method of forming a silicon-on-insulator transistor comprising:
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forming an insulated substrate; defining an active region in the insulated substrate which defines a location of the silicon-on-insulator transistor; doping the active region to a first conductivity level; doping a body access region of insulated substrate that is adjacent to the active region to a second conductivity level; doping a body contact region of the insulated substrate that is adjacent to the body access region to a third conductivity level; forming a high-k gate dielectric layer over the insulated substrate; depositing and patterning a metal gate electrode comprising a metal-based layer and a polysilicon layer to define an etched metal gate electrode having a first portion overlying the active region, and a second portion formed over at least part of the body access region forming sidewall spacers on the etched metal gate electrode to overlie at least part of the body access region; forming source and drain regions in the active region on opposite sides of the first portion of the etched metal gate electrode; implanting ions at a non-perpendicular angle into an implant region in the body access region to encroach under the second portion of the etched metal gate electrode; and forming silicide over the etched metal gate electrode, the body contact region, and the implant region. - View Dependent Claims (18)
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Specification