METHODS FOR FABRICATING MOS DEVICES HAVING HIGHLY STRESSED CHANNELS
First Claim
1. A method for forming a semiconductor device comprising a silicon-comprising substrate, wherein the method comprises the steps of:
- depositing a polysilicon layer overlying the silicon-comprising substrate;
amorphizing the polysilicon layer;
etching the amorphized polysilicon layer to form a gate electrode;
depositing a stress-inducing layer overlying the gate electrode;
annealing the silicon-comprising substrate to recrystallize the gate electrode;
removing the stress-inducing layer;
etching recesses into the substrate using the gate electrode as an etch mask; and
epitaxially growing impurity-doped, silicon-comprising regions in the recesses.
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Abstract
Methods for forming a semiconductor device comprising a silicon-comprising substrate are provided. One exemplary method comprises depositing a polysilicon layer overlying the silicon-comprising substrate, amorphizing the polysilicon layer, etching the amorphized polysilicon layer to form a gate electrode, depositing a stress-inducing layer overlying the gate electrode, annealing the silicon-comprising substrate to recrystallize the gate electrode, removing the stress-inducing layer, etching recesses into the substrate using the gate electrode as an etch mask, and epitaxially growing impurity-doped, silicon-comprising regions in the recesses.
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Citations
20 Claims
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1. A method for forming a semiconductor device comprising a silicon-comprising substrate, wherein the method comprises the steps of:
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depositing a polysilicon layer overlying the silicon-comprising substrate; amorphizing the polysilicon layer; etching the amorphized polysilicon layer to form a gate electrode; depositing a stress-inducing layer overlying the gate electrode; annealing the silicon-comprising substrate to recrystallize the gate electrode; removing the stress-inducing layer; etching recesses into the substrate using the gate electrode as an etch mask; and epitaxially growing impurity-doped, silicon-comprising regions in the recesses. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of fabricating an MOS transistor on and within a silicon-comprising substrate having a first surface, the method comprising the steps of:
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depositing a polysilicon layer overlying the first surface of the silicon-comprising substrate; amorphizing the polysilicon layer; forming a gate stack comprising a gate electrode fabricated from the polysilicon layer and having sidewalls, the gate stack disposed overlying the first surface of the silicon-comprising substrate; forming offset spacers adjacent the sidewalls of the gate electrode; depositing a stress-inducing silicon nitride layer overlying the gate stack, the offset spacers, and the first surface; annealing the silicon-comprising substrate; removing the stress-inducing silicon nitride layer; etching the first surface of the silicon-comprising substrate using the gate stack and the offset spacers as an etch mask to form recesses in the silicon-comprising substrate, the step of etching performed after the step of removing; and epitaxially forming impurity-doped, silicon-comprising regions in the recesses. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A method of fabricating an MOS transistor on and within a silicon-comprising substrate having a first surface, the method comprising the steps of:
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depositing a polysilicon layer overlying the first surface of the silicon-comprising substrate; amorphizing the polysilicon layer; forming a gate stack comprising a gate electrode fabricated from the polysilicon layer and having sidewalls, the gate stack disposed overlying the first surface of the silicon-comprising substrate; forming offset spacers adjacent the sidewalls of the gate electrode; etching the first surface of the silicon-comprising substrate using the gate stack and the offset spacers as an etch mask to form recesses in the silicon-comprising substrate, the recesses exposing second surfaces of the silicon-comprising substrate; depositing a stress-inducing silicon nitride layer overlying the gate stack, the offset spacers, and the second surfaces; annealing the silicon-comprising substrate; removing the stress-inducing silicon nitride layer; and epitaxially forming impurity-doped, silicon-comprising regions in the recesses. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification