METHODS FOR FORMING SILICON NITRIDE BASED FILM OR SILICON CARBON BASED FILM

• US 20100081293A1
• Filed: 10/01/2008
• Published: 04/01/2010
• Est. Priority Date: 10/01/2008
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: MALLICK, ABHIJIT BASU, Nemani, Srinivas D.
• Application Number:
  US12/243,375
• Publication Number:
  US 20100081293A1
• Time in Patent Office: Days
• US Class Current: 438/794
• CPC Class Codes: C23C 16/325 Silicon carbide
• CPC Class Codes: C23C 16/347 Carbon nitride
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/505 using radio frequency discharges
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/0214 the material being a silicon oxynitride, e.g. SiON or SiON:H
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/3148 Silicon Carbide layers
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: H01L 21/3185 of siliconnitrides

Abstract

A method for depositing a silicon nitride based dielectric layer is provided. The method includes introducing a silicon precursor and a radical nitrogen precursor to a deposition chamber. The silicon precursor has a N—Si—H bond, N—Si—Si bond and/or Si—Si—H bond. The radical nitrogen precursor is substantially free from included oxygen. The radical nitrogen precursor is generated outside the deposition chamber. The silicon precursor and the radical nitrogen precursor interact to form the silicon nitride based dielectric layer.

Claims

1. A method for depositing a silicon nitride based dielectric layer, the method comprising:

introducing a silicon precursor and a radical nitrogen precursor to a deposition chamber, wherein the silicon precursor has a bond selected from the group consisting of N—

Si—

H bond, N—

Si—

Si bond and Si—

Si—

H bond, the radical nitrogen precursor is substantially free from included oxygen, and the radical nitrogen precursor is generated outside the deposition chamber; and

interacting the silicon precursor and the radical nitrogen precursor to form the silicon nitride based dielectric layer.

2. The method of claim 1 wherein the silicon precursor is selected from the group consisting of linear polysilanes, diaminosilanes, trisilylamines, bis(diethylamino)silane, cyclopentasilane, N(SiH₃)₃, and/or ladder polysilanes.

3. The method of claim 1 wherein the radical nitrogen precursor is selected from the group consisting of N, NH, and NH₂.

4. The method of claim 1 further comprising a radical inert gas precursor.

5. The method of claim 4 wherein the radical inert gas precursor is radical argon (Ar).

6. The method of claim 1 wherein interacting the silicon precursor and the radical nitrogen precursor has a process temperature between about −

10°

C. and about 100°

C.

7. The method of claim 1 wherein the silicon nitride based dielectric layer is a silicon nitride layer.

8. The method of claim 1 further comprising generating the radical nitrogen precursor in a remote process system.

9. A method for depositing a silicon nitride based dielectric layer, the method comprising:

introducing a silicon precursor and a radical nitrogen precursor to a deposition chamber, wherein the silicon precursor has a formula SiH_nX_4-n, n is a number of 1-4, X is a halogen, the silicon precursor has a Si—

H bond which is weaker then a Si—

X bond, the radical nitrogen precursor is substantially free from included oxygen, and the radical nitrogen precursor is generated outside the deposition chamber; and

interacting the silicon precursor and the radical nitrogen precursor to form the silicon nitride based dielectric layer.

10. The method of claim 9 wherein the silicon precursor is silane.

11. The method of claim 9 wherein the radical nitrogen precursor is selected from the group consisting of N, NH, and NH₂.

12. The method of claim 9 further comprising a radical inert gas precursor.

13. The method of claim 12 wherein the radical inert gas precursor is radical argon (Ar).

14. The method of claim 9 wherein interacting the silicon precursor and the radical nitrogen precursor has a process temperature between about −

10°

C. and about 100°

C.

15. The method of claim 9 wherein the silicon nitride based dielectric layer is a silicon nitride layer.

16. The method of claim 9 further comprising generating the radical nitrogen precursor in a remote process system.

17. A method for depositing a silicon carbon based dielectric layer, the method comprising:

introducing an organo-silicon precursor and a radical inert gas precursor to a deposition chamber, wherein the organo-silicon precursor has a bond selected from the group consisting of C—

Si—

H bond and C—

Si—

Si bond, the radical inert gas precursor is substantially free from included oxygen, and the radical inert gas precursor is generated outside the deposition chamber; and

interacting the organo-silicon precursor and the radical inert gas precursor to form the silicon carbon based dielectric layer.

18. The method of claim 17 wherein the organo-silicon precursor is provided to form a silicon carbide (SiC) layer and selected from the group consisting of alkylsilanes, bridged alkylsilanes, cyclic alkysilanes, and cyclic alkyldisilanes.

19. The method of claim 17 wherein the organo-silicon precursor is provided to form a silicon oxycarbide (SiOC) layer and selected from the group consisting of linear polyalkylsilanes, cyclic alkoxydisilanes, alkoxysilanes, alkoxydisilanes, and polyaminosilanes.

20. The method of claim 17 wherein the organo-silicon precursor is provided to form a silicon carbon nitride (SiCN) layer and selected from the group consisting of cyclic aminosilanes, triaminosilanes, diaminosilanes, and/or trisilylamines.

21. The method of claim 17 wherein the radical inert gas precursor is radical argon (Ar).

22. The method of claim 17 wherein interacting the organo-silicon precursor and the radical inert gas precursor has a process temperature between about −

10°

C. and about 100°

C.

23. The method of claim 17 wherein the silicon carbon based dielectric layer is a silicon carbide layer.

24. The method of claim 17 further comprising generating the radical inert gas precursor in a remote process system.