Semiconductor Device

• US 20100084475A1
• Filed: 10/02/2009
• Published: 04/08/2010
• Est. Priority Date: 10/03/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hata, Yuki, Kamata, Koichiro
• Granted Patent: US 8,181,882 B2
• Time in Patent Office: Days
• US Class Current: 235/492
• CPC Class Codes: G06K 19/0701 at least one of the integrated circuit chips comprising an arrangement for power management
• CPC Class Codes: G06K 19/0715 the arrangement including means to regulate power transfer to the integrated circuit
• CPC Class Codes: G06K 19/0723 the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01Q 1/2225 used in active tags, i.e. provided with its own power source or in passive tags, i.e. deriving power from RF signal
• CPC Class Codes: H01Q 1/248 provided with an AC/DC converting device, e.g. rectennas

Abstract

The semiconductor device includes an antenna 101, a rectifier circuit 102, a first protection circuit 107, and a second protection circuit 108. The antenna 101 generates AC voltage. The rectifier circuit 102 rectifies the AC voltage and generates internal voltage Vin. The first protection circuit 107 includes a first diode 201 and a second diode 202. The second protection circuit 108 includes a capacitor 203 and a transistor 204. In the case where the absolute value of the AC voltage generated in the antenna 101 is larger than a certain value, the first protection circuit 107 cuts the surplus. The second protection circuit 108 functions in the case where the level of the internal voltage Vin generated in the rectifier circuit 102 is high. By changing resonant frequency, the second protection circuit 108 can decrease the number of signals input to the semiconductor device.

Claims

1. A semiconductor device comprising:

an antenna;

a rectifier circuit electrically connected to the antenna;

a first protection circuit; and

a second protection circuit,

wherein a first terminal of the first protection circuit is electrically connected to the antenna, and a second terminal of the first protection circuit is grounded,

wherein a first terminal of the second protection circuit is electrically connected to an output terminal of the rectifier circuit, a second terminal of the second protection circuit is electrically connected to the antenna, and a third terminal of the second protection circuit is grounded,

wherein the first protection circuit includes a first diode and a second diode,

wherein the second protection circuit includes a capacitor and a transistor,

wherein an anode of the first diode is electrically connected to the antenna, and a cathode of the first diode is grounded,

wherein a cathode of the second diode is electrically connected to the antenna, an anode of the second diode is grounded, and the second diode is connected in parallel with the first diode,

wherein one of electrodes of the capacitor is electrically connected to the antenna,

wherein a gate electrode of the transistor is electrically connected to the output terminal of the rectifier circuit,

wherein one of a source electrode and a drain electrode of the transistor is electrically connected to the other of the electrodes of the capacitor, and

wherein the other of the source electrode and the drain electrode of the transistor is grounded.

2. The semiconductor device according to claim 1,

wherein the second protection circuit includes a filter resistor and a filter capacitor,

wherein one of ends of the filter resistor is electrically connected to the output terminal of the rectifier circuit, and the other of the ends of the filter resistor is electrically connected to the gate electrode of the transistor, and

wherein one of electrodes of the filter capacitor is electrically connected to the gate electrode of the transistor and the other of the ends of the filter resistor, and the other of the electrodes of the filter capacitor is grounded.

3. The semiconductor device according to claim 1,

wherein each of the first diode and the second diode is a PIN diode,

wherein the PIN diode includes a first semiconductor region, a second semiconductor region, and a third semiconductor region on the same plane,

wherein the first semiconductor region contains an impurity element which imparts one conductivity type,

wherein the second semiconductor region contains an impurity element which imparts a conductivity type opposite to that of the impurity element, and

wherein the third semiconductor region is interposed between the first semiconductor region and the second semiconductor region and has a larger resistance value than the first semiconductor region and the second semiconductor region.

4. The semiconductor device according to claim 1,

wherein the first protection circuit functions if amplitude of AC voltage generated in the antenna is first amplitude or higher,

wherein the second protection circuit functions if the amplitude of the AC voltage generated in the antenna is second amplitude or higher, and

wherein the first amplitude is higher than the second amplitude.

5. The semiconductor device according to claim 1, further comprising a demodulation circuit, a constant voltage circuit, a logic circuit, and a modulation circuit,

wherein an input terminal of the demodulation circuit is electrically connected to the antenna,

wherein an input terminal of the constant voltage circuit is electrically connected to the output terminal of the rectifier circuit,

wherein a first input terminal of the logic circuit is electrically connected to an output terminal of the demodulation circuit, and a second input terminal of the logic circuit is electrically connected to an output terminal of the constant voltage circuit, and

wherein an input terminal of the modulation circuit is electrically connected to an output terminal of the logic circuit, and an output terminal of the modulation circuit is electrically connected to the antenna.

6. A semiconductor device comprising:

an antenna;

a rectifier circuit electrically connected to the antenna;

a first protection circuit; and

a second protection circuit,

wherein a first terminal of the first protection circuit is electrically connected to the antenna, and a second terminal of the first protection circuit is grounded,

wherein a first terminal of the second protection circuit is electrically connected to an output terminal of the rectifier circuit, a second terminal of the second protection circuit is electrically connected to the antenna, and a third terminal of the second protection circuit is grounded,

wherein the first protection circuit includes a plurality of first diodes connected in series and a plurality of second diodes connected in series,

wherein the second protection circuit includes a capacitor and a transistor,

wherein an anode of the plurality of first diodes is electrically connected to the antenna, and a cathode of the plurality of first diodes is grounded,

wherein a cathode of the plurality of second diodes is electrically connected to the antenna, an anode of the plurality of second diodes is grounded,

wherein the plurality of second diodes is connected in parallel with the plurality of first diodes,

wherein one of electrodes of the capacitor is electrically connected to the antenna,

wherein a gate electrode of the transistor is electrically connected to the output terminal of the rectifier circuit,

wherein one of a source electrode and a drain electrode of the transistor is electrically connected to the other of the electrodes of the capacitor, and

wherein the other of the source electrode and the drain electrode of the transistor is grounded.

7. The semiconductor device according to claim 6,

wherein the second protection circuit includes a filter resistor and a filter capacitor,

wherein one of ends of the filter resistor is electrically connected to the output terminal of the rectifier circuit, and the other of the ends of the filter resistor is electrically connected to the gate electrode of the transistor, and

wherein one of electrodes of the filter capacitor is electrically connected to the gate electrode of the transistor and the other of the ends of the filter resistor, and the other of the electrodes of the filter capacitor is grounded.

8. The semiconductor device according to claim 6,

wherein each of the plurality of first diodes and the plurality of second diodes is a PIN diode,

wherein the PIN diode includes a first semiconductor region, a second semiconductor region, and a third semiconductor region on the same plane,

wherein the first semiconductor region contains an impurity element which imparts one conductivity type,

wherein the second semiconductor region contains an impurity element which imparts a conductivity type opposite to that of the impurity element, and

wherein the third semiconductor region is interposed between the first semiconductor region and the second semiconductor region and has a larger resistance value than the first semiconductor region and the second semiconductor region.

9. The semiconductor device according to claim 6,

wherein the first protection circuit functions if amplitude of AC voltage generated in the antenna is first amplitude or higher,

wherein the second protection circuit functions if the amplitude of the AC voltage generated in the antenna is second amplitude or higher, and

wherein the first amplitude is higher than the second amplitude.

10. The semiconductor device according to claim 6, further comprising a demodulation circuit, a constant voltage circuit, a logic circuit, and a modulation circuit,

wherein an input terminal of the demodulation circuit is electrically connected to the antenna,

wherein an input terminal of the constant voltage circuit is electrically connected to the output terminal of the rectifier circuit,

wherein a first input terminal of the logic circuit is electrically connected to an output terminal of the demodulation circuit, and a second input terminal of the logic circuit is electrically connected to an output terminal of the constant voltage circuit, and

wherein an input terminal of the modulation circuit is electrically connected to an output terminal of the logic circuit, and an output terminal of the modulation circuit is electrically connected to the antenna.

11. A semiconductor device comprising:

an antenna;

a rectifier circuit electrically connected to the antenna;

a first protection circuit; and

a second protection circuit,

wherein a first terminal of the first protection circuit is electrically connected to the antenna, and a second terminal of the first protection circuit is grounded,

wherein a first terminal of the second protection circuit is electrically connected to an output terminal of the rectifier circuit, a second terminal of the second protection circuit is electrically connected to the antenna, and a third terminal of the second protection circuit is grounded,

wherein the first protection circuit includes a first diode and a second diode,

wherein the second protection circuit includes a first resistor, a voltage divider diode, a p-channel transistor, a second resistor, a capacitor, and an n-channel transistor,

wherein an anode of the first diode is electrically connected to the antenna, and a cathode of the first diode is grounded,

wherein a cathode of the second diode is electrically connected to the antenna, an anode of the second diode is grounded, and the second diode is connected in parallel with the first diode,

wherein one of ends of the first resistor is electrically connected to the output terminal of the rectifier circuit,

wherein an anode of the voltage divider diode is electrically connected to the other of the ends of the first resistor, and a cathode of the voltage divider diode is grounded,

wherein a gate electrode of the p-channel transistor is electrically connected to the other of the ends of the first resistor and the anode of the voltage divider diode,

wherein one of a source electrode and a drain electrode of the p-channel transistor is electrically connected to the output terminal of the rectifier circuit,

wherein one of ends of the second resistor is electrically connected to the other of the source electrode and the drain electrode of the p-channel transistor, and the other of the ends of the second resistor is grounded,

wherein one of electrodes of the capacitor is electrically connected to the antenna,

wherein a gate electrode of the n-channel transistor is electrically connected to the other of the source electrode and the drain electrode of the p-channel transistor and the one of the ends of the second resistor,

wherein one of a source electrode and a drain electrode of the n-channel transistor is electrically connected to the other of the electrodes of the capacitor, and

wherein the other of the source electrode and the drain electrode of the n-channel transistor is grounded.

12. The semiconductor device according to claim 11,

wherein the second protection circuit includes a filter resistor and a filter capacitor,

wherein one of ends of the filter resistor is electrically connected to the other of the source electrode and the drain electrode of the p-channel transistor and the one of the ends of the second resistor,

wherein the other of the ends of the filter resistor is electrically connected to the gate electrode of the n-channel transistor, and

wherein one of electrodes of the filter capacitor is electrically connected to the gate electrode of the n-channel transistor and the other of the ends of the filter resistor, and the other of the electrodes of the filter capacitor is grounded.

13. The semiconductor device according to claim 11,

wherein each of the first diode and the second diode is a PIN diode,

wherein the PIN diode includes a first semiconductor region, a second semiconductor region, and a third semiconductor region on the same plane,

wherein the first semiconductor region contains an impurity element which imparts one conductivity type,

wherein the second semiconductor region contains an impurity element which imparts a conductivity type opposite to that of the impurity element, and

wherein the third semiconductor region is interposed between the first semiconductor region and the second semiconductor region and has a larger resistance value than the first semiconductor region and the second semiconductor region.

14. The semiconductor device according to claim 11, wherein the voltage divider diode is a diode-connected transistor.

15. The semiconductor device according to claim 11,

wherein the first protection circuit functions when amplitude of AC voltage generated in the antenna is first amplitude or higher,

wherein the second protection circuit functions when the amplitude of the AC voltage generated in the antenna is second amplitude or higher, and

wherein the first amplitude is higher than the second amplitude.

16. The semiconductor device according to claim 11, further comprising a demodulation circuit, a constant voltage circuit, a logic circuit, and a modulation circuit,

wherein an input terminal of the demodulation circuit is electrically connected to the antenna,

wherein an input terminal of the constant voltage circuit is electrically connected to the output terminal of the rectifier circuit,

wherein a first input terminal of the logic circuit is electrically connected to an output terminal of the demodulation circuit, and a second input terminal of the logic circuit is electrically connected to an output terminal of the constant voltage circuit, and

wherein an input terminal of the modulation circuit is electrically connected to an output terminal of the logic circuit, and an output terminal of the modulation circuit is electrically connected to the antenna.

17. A semiconductor device comprising:

an antenna;

a rectifier circuit electrically connected to the antenna;

a first protection circuit; and

a second protection circuit,

wherein a first terminal of the first protection circuit is electrically connected to the antenna, and a second terminal of the first protection circuit is grounded,

wherein a first terminal of the second protection circuit is electrically connected to an output terminal of the rectifier circuit, a second terminal of the second protection circuit is electrically connected to the antenna, and a third terminal of the second protection circuit is grounded,

wherein the first protection circuit includes a plurality of first diodes connected in series and a plurality of second diodes connected in series,

wherein the second protection circuit includes a first resistor, a voltage divider diode, a p-channel transistor, a second resistor, a capacitor, and an n-channel transistor,

wherein an anode of the plurality of first diodes is electrically connected to the antenna, and a cathode of the plurality of first diodes is grounded,

wherein a cathode of the plurality of second diodes is electrically connected to the antenna, an anode of the plurality of second diodes is grounded,

wherein the plurality of second diodes is connected in parallel with the plurality of first diodes,

wherein one of ends of the first resistor is electrically connected to the output terminal of the rectifier circuit,

wherein an anode of the voltage divider diode is electrically connected to the other of the ends of the first resistor, and a cathode of the voltage divider diode is grounded,

wherein a gate electrode of the p-channel transistor is electrically connected to the other of the ends of the first resistor and the anode of the voltage divider diode,

wherein one of a source electrode and a drain electrode of the p-channel transistor is electrically connected to the output terminal of the rectifier circuit,

wherein one of ends of the second resistor is electrically connected to the other of the source electrode and the drain electrode of the p-channel transistor, and the other of the ends of the second resistor is grounded,

wherein one of electrodes of the capacitor is electrically connected to the antenna,

wherein a gate electrode of the n-channel transistor is electrically connected to the other of the source electrode and the drain electrode of the p-channel transistor and the one of the ends of the second resistor,

wherein one of a source electrode and a drain electrode of the n-channel transistor is electrically connected to the other of the electrodes of the capacitor, and

wherein the other of the source electrode and the drain electrode of the n-channel transistor is grounded.

18. The semiconductor device according to claim 17,

wherein the second protection circuit includes a filter resistor and a filter capacitor,

wherein one of ends of the filter resistor is electrically connected to the other of the source electrode and the drain electrode of the p-channel transistor and the one of the ends of the second resistor,

wherein the other of the ends of the filter resistor is electrically connected to the gate electrode of the n-channel transistor, and

wherein one of electrodes of the filter capacitor is electrically connected to the gate electrode of the n-channel transistor and the other of the ends of the filter resistor, and the other of the electrodes of the filter capacitor is grounded.

19. The semiconductor device according to claim 17,

wherein each of the plurality of first diodes and the plurality of second diodes is a PIN diode,

wherein the PIN diode includes a first semiconductor region, a second semiconductor region, and a third semiconductor region on the same plane,

wherein the first semiconductor region contains an impurity element which imparts one conductivity type,

wherein the second semiconductor region contains an impurity element which imparts a conductivity type opposite to that of the impurity element, and

wherein the third semiconductor region is interposed between the first semiconductor region and the second semiconductor region and has a larger resistance value than the first semiconductor region and the second semiconductor region.

20. The semiconductor device according to claim 17, wherein the voltage divider diode is a diode-connected transistor.

21. The semiconductor device according to claim 17,

wherein the first protection circuit functions when amplitude of AC voltage generated in the antenna is first amplitude or higher,

wherein the second protection circuit functions when the amplitude of the AC voltage generated in the antenna is second amplitude or higher, and

wherein the first amplitude is higher than the second amplitude.

22. The semiconductor device according to claim 17, further comprising a demodulation circuit, a constant voltage circuit, a logic circuit, and a modulation circuit,

wherein an input terminal of the demodulation circuit is electrically connected to the antenna,

wherein an input terminal of the constant voltage circuit is electrically connected to the output terminal of the rectifier circuit,

wherein a first input terminal of the logic circuit is electrically connected to an output terminal of the demodulation circuit, and a second input terminal of the logic circuit is electrically connected to an output terminal of the constant voltage circuit, and

wherein an input terminal of the modulation circuit is electrically connected to an output terminal of the logic circuit, and an output terminal of the modulation circuit is electrically connected to the antenna.