Dielectric mesh isolated phase change structure for phase change memory
First Claim
1. A method for manufacturing a memory device, the method comprising:
- forming a first electrode and a second electrode;
forming a body of phase change memory material between the first and second electrodes, the phase change memory material comprising a chalcogenide material doped with a dielectric material; and
the body of phase change material having an active region between the first and second electrodes, the active region comprising a mesh of the dielectric material with at least one domain of chalcogenide material, and having a region outside of the active region without the mesh of dielectric material.
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Abstract
A method for manufacturing a memory device, and a resulting device, is described using silicon oxide doped chalcogenide material. A first electrode having a contact surface; a body of phase change memory material in a polycrystalline state including a portion in contact with the contact surface of the first electrode, and a second electrode in contact with the body of phase change material are formed. The process includes melting and cooling the phase change memory material one or more times within an active region in the body of phase change material without disturbing the polycrystalline state outside the active region. A mesh of silicon oxide in the active region with at least one domain of chalcogenide material results. Also, the grain size of the phase change material in the polycrystalline state outside the active region is small, resulting in a more uniform structure.
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Citations
22 Claims
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1. A method for manufacturing a memory device, the method comprising:
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forming a first electrode and a second electrode; forming a body of phase change memory material between the first and second electrodes, the phase change memory material comprising a chalcogenide material doped with a dielectric material; and the body of phase change material having an active region between the first and second electrodes, the active region comprising a mesh of the dielectric material with at least one domain of chalcogenide material, and having a region outside of the active region without the mesh of dielectric material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A phase change memory device, comprising:
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a first electrode and a second electrode; a body of phase change memory material between the first and second electrodes, the phase change memory material comprising a chalcogenide material doped with a dielectric material; and the body of phase change material having an active region between the first and second electrodes, the active region comprising a mesh of the dielectric material with at least one domain of chalcogenide material, and having a region outside of the active region without the mesh of dielectric material. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification