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Dielectric mesh isolated phase change structure for phase change memory

  • US 20100084624A1
  • Filed: 10/02/2008
  • Published: 04/08/2010
  • Est. Priority Date: 10/02/2008
  • Status: Active Grant
First Claim
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1. A method for manufacturing a memory device, the method comprising:

  • forming a first electrode and a second electrode;

    forming a body of phase change memory material between the first and second electrodes, the phase change memory material comprising a chalcogenide material doped with a dielectric material; and

    the body of phase change material having an active region between the first and second electrodes, the active region comprising a mesh of the dielectric material with at least one domain of chalcogenide material, and having a region outside of the active region without the mesh of dielectric material.

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