THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, AND ELECTRONIC APPARATUS
First Claim
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1. A thin film transistor comprising:
- an insulating layer formed from an organic material, an oxide material, or a silicon based material;
a source electrode and a drain electrode disposed on the insulating layer by using an electrically conductive oxide material;
a self-organized film covering exposed surfaces of the insulating layer, the source electrode, and the drain electrode; and
a semiconductor thin film disposed, on the insulating layer provided with the self-organized film, over from the source electrode to the drain electrode.
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Abstract
A thin film transistor includes an insulating layer formed from an organic material, an oxide material, or a silicon based material, a source electrode and a drain electrode disposed on the insulating layer by using an electrically conductive oxide material, a self-organized film covering exposed surfaces of the insulating layer, the source electrode, and the drain electrode, and a semiconductor thin film disposed, on the insulating layer provided with the self-organized film, over from the source electrode to the drain electrode.
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Citations
11 Claims
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1. A thin film transistor comprising:
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an insulating layer formed from an organic material, an oxide material, or a silicon based material; a source electrode and a drain electrode disposed on the insulating layer by using an electrically conductive oxide material; a self-organized film covering exposed surfaces of the insulating layer, the source electrode, and the drain electrode; and a semiconductor thin film disposed, on the insulating layer provided with the self-organized film, over from the source electrode to the drain electrode. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing a thin film transistor, the method comprising the steps of:
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forming a source electrode and a drain electrode by using an electrically conductive oxide material on an insulating layer formed from an organic material, an oxide material, or a silicon based material; forming a self-organized film on exposed surfaces of the insulating layer, the source electrode, and the drain electrode through a surface treatment; and forming a semiconductor thin film, on the insulating layer provided with the self-organized film, over from the source electrode to the drain electrode. - View Dependent Claims (7, 8, 9, 10)
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11. An electronic apparatus comprising a thin film transistor including:
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an insulating layer formed from an organic material, an oxide material, or a silicon based material; a source electrode and a drain electrode disposed on the insulating layer by using an electrically conductive oxide material; a self-organized film covering exposed surfaces of the insulating layer, the source electrode, and the drain electrode; and a semiconductor thin film disposed, on the insulating layer provided with the self-organized film, over from the source electrode to the drain electrode.
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Specification