Devices Containing Permanent Charge
First Claim
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1. A high-voltage solid-state device, comprising:
- an array of active device portions, containing at least some trenches which have added permanent charge therein, andare laterally surrounded, for the majority of their vertical extent, by semiconductor material which is doped with a first conductivity type; and
a termination structure which surrounds said array, and which includes a final dielectric trench containing permanent charge;
wherein said final dielectric trench is surrounded by said material of said first conductivity type, and wherein doping of said material tapers off laterally to a junction, and said material outside of said junction is predominantly of a second conductivity type.
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Abstract
An edge termination structure includes a final dielectric trench containing permanent charge. The final dielectric trench is surrounded by first conductivity type semiconductor material (doped by lateral outdiffusion from the trenches), which in turn is laterally surrounded by second conductivity type semiconductor material.
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Citations
28 Claims
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1. A high-voltage solid-state device, comprising:
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an array of active device portions, containing at least some trenches which have added permanent charge therein, and are laterally surrounded, for the majority of their vertical extent, by semiconductor material which is doped with a first conductivity type; and a termination structure which surrounds said array, and which includes a final dielectric trench containing permanent charge; wherein said final dielectric trench is surrounded by said material of said first conductivity type, and wherein doping of said material tapers off laterally to a junction, and said material outside of said junction is predominantly of a second conductivity type. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A high-voltage solid-state device, comprising:
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an array of active device portions, containing at least some trenches which include gate electrodes, and have added permanent charge therein, and are laterally surrounded, for the majority of their vertical extent, by semiconductor material which is doped with a first conductivity type and is capacitively coupled, at least in part, to ones of said gate electrodes; and a termination structure which surrounds said array, and which includes a final dielectric trench which contains permanent charge and which has approximately the same depth as said trenches in said array; wherein said final dielectric trench is surrounded by said material of said first conductivity type, and wherein doping of said material tapers off laterally to a predominantly vertical junction, and said material outside of said junction is predominantly of a second conductivity type. - View Dependent Claims (16, 18)
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12-15. -15. (canceled)
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17. (canceled)
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19. A high-voltage solid-state device, comprising:
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an array of active device portions, containing first trenches which have added permanent charge, and contain conductive gate electrodes, and are laterally surrounded, for at least some of their vertical extent, by semiconductor material which is doped with a first conductivity type; and
alsosource diffusions of a second conductivity type, at least partly overlying said semiconductor material which laterally surrounds ones of said first trenches; and second trenches which are different from said first trenches; and a termination structure which laterally surrounds said array, and which includes a final dielectric trench which is also surrounded by said material of said first conductivity type, and wherein doping of said material tapers off laterally to a substantially vertical junction, and wherein said termination structure also contains peak-field-reducing structures outside said junction. - View Dependent Claims (20, 21, 25, 26, 27)
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22-24. -24. (canceled)
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28-100. -100. (canceled)
Specification