Nitride semiconductor substrate
First Claim
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1. A nitride semiconductor substrate, comprising:
- a first surface forming a principal surface of the substrate;
a first edge formed by beveling at least a portion of an edge of the first surface of the substrate; and
a scattering region formed in at least a portion of the first edge, the scattering region scattering more external incident light than the first surface.
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Abstract
A nitride semiconductor substrate has a first surface forming a principal surface of the substrate. A first edge is formed by beveling at least a portion of an edge of the first surface of the substrate. A scattering region is formed in at least a portion of the first edge. The scattering region scatters more external incident light than the first surface.
9 Citations
10 Claims
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1. A nitride semiconductor substrate, comprising:
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a first surface forming a principal surface of the substrate; a first edge formed by beveling at least a portion of an edge of the first surface of the substrate; and a scattering region formed in at least a portion of the first edge, the scattering region scattering more external incident light than the first surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification