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Nitride semiconductor substrate

  • US 20100084745A1
  • Filed: 02/25/2009
  • Published: 04/08/2010
  • Est. Priority Date: 10/06/2008
  • Status: Active Grant
First Claim
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1. A nitride semiconductor substrate, comprising:

  • a first surface forming a principal surface of the substrate;

    a first edge formed by beveling at least a portion of an edge of the first surface of the substrate; and

    a scattering region formed in at least a portion of the first edge, the scattering region scattering more external incident light than the first surface.

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