Arrangement and Method for Generating Mixed Light

• US 20100084964A1
• Filed: 01/30/2008
• Published: 04/08/2010
• Est. Priority Date: 02/02/2007
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Bogner, Georg, Petersen, Kirstin, Hahn, Berthold, Groetsch, Stefan, Haerle, Volker
• Granted Patent: US 8,664,847 B2
• Time in Patent Office: Days
• US Class Current: 313/502
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Abstract

At least two semiconductor components emit electromagnetic radiation in different wavelength ranges. The superimposition of these electromagnetic radiations of all semiconductor components has at least one fraction in the visible wavelength range. At least one of the semiconductor components has a luminescence conversion element in the beam path.

Claims

1. An arrangement for generating mixed light, the arrangement comprising at least two semiconductor components emitting electromagnetic radiation in different wavelength ranges, the semiconductor component being used as a light source, wherein at least one of the semiconductor components has a luminescence conversion element in a beam path.

2. The arrangement according to claim 1, wherein the semiconductor component having a luminescence conversion element generates a short-wavelength primary wavelength in an invisible wavelength range.

3. The arrangement according to claim 1, wherein the semiconductor component having a luminescence conversion element generates a short-wavelength primary wavelength in a visible wavelength range.

4. The arrangement according to claim 2, wherein a generated converted secondary wavelength lies in a wavelength range of 430 nm to 760 nm.

5. The arrangement according to claim 1, wherein the arrangement comprises a white light source for an illumination device on image reproduction equipment.

6. The arrangement according to claim 1, wherein the luminescence conversion element contains silicates or oxynitrides, or green-converting phosphors that absorb in blue or ultraviolet ranges for conversion.

7. The arrangement according to claim 1, wherein the luminescence conversion element is produced in a potted volume with a semiconductor chip of one of the semiconductor components.

8. The arrangement according to claim 7, further comprising a reflective element inside a housing the reflective element being inserted into the beam path of the semiconductor chip in such a manner that a primary wavelength is reflected, the reflective element being transparent to a secondary wavelength.

9. The arrangement according to claim 7, wherein the semiconductor chip minimally absorbs and maximally reflects a primary wavelength generated and reflected on the potted volume.

10. The arrangement according to claim 7, wherein the semiconductor chip minimally absorbs and maximally reflects a converted secondary wavelength.

11. The arrangement according to claim 7, wherein the potted volume around the semiconductor components is coated with the luminescence conversion element.

12. The arrangement according to claim 1, wherein the luminescence conversion element is placed directly on a semiconductor chip in the form of a coating, the semiconductor chip being part of one of the semiconductor components.

13. The arrangement according to claim 1, wherein the luminescence conversion element comprises a covering of a component housing of the semiconductor component.

14. A method for generating mixed light, the method comprising using at least two semiconductor components emitting electromagnetic radiation in different wavelength ranges as a light source, wherein at least one of the semiconductor components has a luminescence conversion element in a beam path.

15. The method according to claim 14, wherein at least one of the semiconductor components having the luminescence conversion element generates a short-wavelength primary wavelength in an invisible wavelength range.

16. The method according to claim 14, wherein at least one of the semiconductor components having the luminescence conversion element generates a short-wavelength primary wavelength in a visible wavelength range.

17. The method according to claim 15, wherein a generated converted secondary wavelength lies in the wavelength range from 430 nm to 760 nm.

18. The method according to claim 15, wherein mixed light generation does not take place simultaneously, but rather by sequential switching on and off.

19. An optical component comprising:

a first semiconductor component emitting electromagnetic radiation in a first wavelength range;

a second semiconductor component emitting electromagnetic radiation in a second wavelength range different than the first wavelength range such that superimposition of the first and second wavelength ranges spans at least a portion of the visible wavelength range; and

a luminescence conversion element disposed in a beam path of the first semiconductor component.

20. The optical component according to claim 19, wherein the luminescence conversion element is disposed in a potting component that overlies the first semiconductor component.