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Methods for manufacturing trench MOSFET with implanted drift region

  • US 20100087039A1
  • Filed: 12/09/2009
  • Published: 04/08/2010
  • Est. Priority Date: 10/31/2007
  • Status: Active Grant
First Claim
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1. A method for manufacturing a trenched semiconductor power device comprising plurality of trenched gates surrounded by source regions near a top surface of a semiconductor substrate encompassed in body regions, said method comprising:

  • carrying out a tilt-angle implantation through sidewalls of trenches to form drift regions surrounding said trenches to provide drift regions below body regions for on-resistance reduction, and preventing a degraded breakdown voltage with a thick oxide in lower portion of trench sidewall and bottom.

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