SEMICONDUCTOR POWER CONVERSION APPARATUS AND METHOD OF MANUFACTURING THE SAME
First Claim
1. A semiconductor power conversion apparatus comprising:
- a semiconductor device for performing power conversion; and
a bus bar for electrically connecting an electrode of said semiconductor device and a circuit component external to the semiconductor device with each other, whereinsaid bus bar is configured to include a connection section with said electrode and a non-connection section with said electrode that are integrally shaped and to have a thermal stress relief mechanism for relieving thermal stress acting on a connection part formed of a part of said connection section and electrically connected with said electrode without through bonding wire in a state of being opposed to said electrode, andsaid connection part is formed to have a thickness smaller than that of said non-connection section thereby forming said thermal stress relief mechanism.
1 Assignment
0 Petitions
Accused Products
Abstract
A bus bar has a lead portion and a bus bar portion which are integrally shaped. The lead portion is provided in such a shape that branches from the bus bar portion. A part of the lead portion forms a connection part directly electrically connected with a transistor electrode and a diode electrode by a connecting material such as solder. The thickness of the lead portion including the connection part is made smaller than the thickness of the bus bar portion. Accordingly, such an interconnection structure can be provided in which the electrode of the semiconductor device and the bus bar are electrically directly connected with each other and thermal stress at the connection part therebetween can be relieved.
-
Citations
18 Claims
-
1. A semiconductor power conversion apparatus comprising:
-
a semiconductor device for performing power conversion; and a bus bar for electrically connecting an electrode of said semiconductor device and a circuit component external to the semiconductor device with each other, wherein said bus bar is configured to include a connection section with said electrode and a non-connection section with said electrode that are integrally shaped and to have a thermal stress relief mechanism for relieving thermal stress acting on a connection part formed of a part of said connection section and electrically connected with said electrode without through bonding wire in a state of being opposed to said electrode, and said connection part is formed to have a thickness smaller than that of said non-connection section thereby forming said thermal stress relief mechanism. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 17, 18)
-
-
12. (canceled)
-
13. A method of manufacturing a semiconductor power conversion apparatus comprising:
-
a first process of electrically connecting a bus bar with an electrode of a semiconductor device, said bus bar being configured to include a connection section with said electrode of said semiconductor device and a non-connection section with said electrode that are integrally shaped, said connection section having a thermal stress relief mechanism for relieving thermal stress acting on a connection part with said electrode; and a second process for forming an insulating protection coat for said connection part of said bus bar with said electrode formed through said first process, wherein a protection coat is provided prior to said first process, said protection coat being formed by covering with an insulating material a surface of a non-connection part with said electrode of said bus bar, and said second process includes a first sub-process of coating with an insulating material a surface of said connection part with said electrode in a state of being connected with said electrode, and a second sub-process of forming said insulating protection coat by heat-curing a coating formed through said first sub-process. - View Dependent Claims (14, 15)
-
-
16. A method of manufacturing a semiconductor power conversion apparatus comprising:
-
a first process of electrically connecting a bus bar with an electrode of a semiconductor device, said bus bar being configured to include a connection section with said electrode of said semiconductor device and a non-connection section with said electrode that are integrally shaped, said connection section having a thermal stress relief mechanism for relieving thermal stress acting on a connection part with said electrode; and a second process for forming an insulating protection coat for said connection part of said bus bar said bus bar with said electrode formed through said first process and, wherein in said first process, said non-connection section is attached to a fixed post formed of an insulating material, said method further comprising a third process of mounting a circuit board on said fixed post with said non-connection section interposed, said third process including a first sub-process of fitting a protrusion portion in a mounting hole provided in said circuit board, said protrusion portion being provided integrally with said non-connection section on that surface opposite to a surface of said non-connection section having said fixed post attached thereon, and a second sub-process of connecting said protrusion portion with a conductive portion provided on a side surface of said mounting hole and electrically connected to a circuit component on said circuit board, thereby electrically connecting said conductive portion and said protrusion portion with each other.
-
Specification