SEMICONDUCTOR DEVICE

• US 20100090016A1
• Filed: 12/15/2009
• Published: 04/15/2010
• Est. Priority Date: 09/10/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei, KOYAMA, Jun
• Granted Patent: US 7,909,260 B2
• Time in Patent Office: Days
• US Class Current: 235/492
• CPC Class Codes: G06K 19/07345 by activating or deactivating at least a part of the circuit on the record carrier, e.g. ON/OFF switches
• CPC Class Codes: Y10S 257/91 Diode arrays, e.g. diode read-only memory array

Abstract

A semiconductor device used as an ID chip is provided, of which operation is terminated when its role is finished or expires. According to the invention, an antenna circuit, a voltage detecting circuit, a current amplifier circuit, a signal processing circuit, and a fuse are provided over an insulating substrate. When large power is applied to the antenna circuit, a voltage is detected by voltage detecting circuit and a corresponding current is amplified by the current amplifier circuit, thereby the fuse is melted down. Also, when an anti-fuse is used, the anti-fuse can short an insulating film by applying an excessive voltage. In this manner, the semiconductor device has a function for making it invalid by stopping operation of the signal processing circuit when the role of the device is finished or expires.

Claims

1. A semiconductor device comprising:

an antenna circuit;

a signal processing circuit; and

an anti-fuse element,

wherein an output of the antenna circuit is connected to the signal processing circuit and the anti-fuse element.

2. The semiconductor device according to claim 1, wherein the signal processing circuit includes a rectifier circuit and a modulating circuit.

3. The semiconductor device according to claim 1,

wherein the anti-fuse element including a first terminal, a second terminal, and an insulating film interposed between the first terminal and the second terminal,

wherein the anti-fuse element is configured to short the first terminal and the second terminal by applying an excessive voltage, and

wherein a power source is not supplied to the signal processing circuit after the first terminal and the second terminal of the anti-fuse element is shorted.

4. The semiconductor device according to claim 1, wherein the anti-fuse element includes a diode having a junction portion,

wherein the anti-fuse element is configured to short the junction portion of the diode by applying an excessive voltage, and

wherein a power source is not supplied to the signal processing circuit after the junction portion of the anti-fuse element is shorted.

5. The semiconductor device according to claim 1, wherein the signal processing circuit is formed over a glass substrate.

6. The semiconductor device according to claim 1, wherein the signal processing circuit is formed over a plastic substrate.

7. The semiconductor device according to claim 1, wherein the signal processing circuit is formed over an insulating film.

8. The semiconductor device according to claim 1, wherein the antenna circuit is provided above or partially above the signal processing circuit.

9. The semiconductor device according to claim 1, wherein a signal inputted to the antenna circuit is a radio signal.

10. An IC card, an IC tag, an RFID, a transponder, paper money, valuable securities, a passport, an electronic device, a bag, and clothes, comprising the semiconductor device according to claim 1.