SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• US 20100090217A1
• Filed: 10/08/2009
• Published: 04/15/2010
• Est. Priority Date: 10/10/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: AKIMOTO, Kengo
• Granted Patent: US 8,158,975 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

Electric characteristics and reliability of a thin film transistor are impaired by diffusion of an impurity element into a channel region. The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer. A thin film transistor including an oxide semiconductor layer including indium, gallium, and zinc includes source or drain electrode layers in which first conductive layers including aluminum as a main component and second conductive layers including a high-melting-point metal material are stacked. An oxide semiconductor layer 113 is in contact with the second conductive layers and barrier layers including aluminum oxide as a main component, whereby diffusion of aluminum atoms to the oxide semiconductor layer is suppressed.

Claims

1. A semiconductor device comprising:

an oxide semiconductor layer including indium, gallium, and zinc;

a first conductive layer including aluminum;

a second conductive layer including a high-melting-point metal material over the first conductive layer; and

a barrier layer including aluminum oxide,

wherein the barrier layer is formed in an edge portion of the first conductive layer, and

wherein the oxide semiconductor layer is provided in contact with the second conductive layer and the barrier layer.

2. The semiconductor device according to claim 1, wherein the barrier layer including aluminum oxide has a thickness of greater than 0 nm and less than or equal to 5 nm.

3. The semiconductor device according to claim 1, wherein the high-melting-point metal material includes at least one selected from the group consisting of titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium.

4. The semiconductor device according to claim 1, wherein the semiconductor device is one selected from the group consisting of an e-book, a television set, a digital photo frame, a portable amusement machine, a slot machine, and a phone.

5. A semiconductor device comprising:

a gate insulating layer;

a gate electrode layer provided on one side of the gate insulating layer;

an oxide semiconductor layer provided on the other side of the gate insulating layer; and

a source electrode layer and a drain electrode layer, each comprising a first conductive layer including aluminum in contact with the gate insulating layer, a second conductive layer including a high-melting-point metal material over the first conductive layer, and a barrier layer a barrier layer including aluminum oxide at an edge portion of the first conductive layer,

wherein the oxide semiconductor layer is in contact with the second conductive layer and the barrier layer.

6. The semiconductor device according to claim 5, wherein the barrier layer including aluminum oxide has a thickness of greater than 0 nm and less than or equal to 5 nm.

7. The semiconductor device according to claim 5, wherein the high-melting-point metal material includes at least one selected from the group consisting of titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium.

8. The semiconductor device according to claim 5, wherein the semiconductor device is one selected from the group consisting of an e-book, a television set, a digital photo frame, a portable amusement machine, a slot machine, and a phone.

9. A semiconductor device comprising:

a source electrode layer and a drain electrode layer, each comprising a first conductive layer including aluminum, a second conductive layer including a high-melting-point metal material over the first conductive layer, and a barrier layer a barrier layer including aluminum oxide at an edge portion of the first conductive layer;

an oxide semiconductor layer covering end portions of the source electrode layer and the drain electrode layer;

a gate insulating layer covering the oxide semiconductor layer; and

a gate electrode layer overlapping the end portions of the source electrode layer and the drain electrode layer with the oxide semiconductor layer and the gate insulating layer interposed therebetween,

wherein the oxide semiconductor layer is in contact with the second conductive layer and the barrier layer.

10. The semiconductor device according to claim 9, wherein the barrier layer including aluminum oxide has a thickness of greater than 0 nm and less than or equal to 5 nm.

11. The semiconductor device according to claim 9, wherein the high-melting-point metal material includes at least one selected from the group consisting of titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium.

12. The semiconductor device according to claim 9, wherein the semiconductor device is one selected from the group consisting of an e-book, a television set, a digital photo frame, a portable amusement machine, a slot machine, and a phone.

13. A manufacturing method of a thin film transistor, comprising:

forming a source electrode layer and a drain electrode layer, each comprising a first conductive layer including aluminum, and a second conductive layer including a high-melting-point metal material over the first conductive layer;

forming a barrier layer including aluminum oxide by performing an oxidation treatment on an exposed edge portion of the first conductive layer; and

stacking an oxide semiconductor layer including indium, gallium, and zinc so that the oxide semiconductor layer is in contact with the second conductive layer and the barrier layer.

14. The manufacturing method of a thin film transistor according to claim 13, wherein the barrier layer including aluminum oxide has a thickness of greater than 0 nm and less than or equal to 5 nm.

15. The manufacturing method of a thin film transistor according to claim 13, wherein the high-melting-point metal material includes at least one selected from the group consisting of titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium.

16. The manufacturing method of a thin film transistor according to claim 13, wherein the thin film transistor is incorporated in one selected from the group consisting of an e-book, a television set, a digital photo frame, a portable amusement machine, a slot machine, and a phone.