SEALED DEVICE

• US 20100090218A1
• Filed: 10/09/2009
• Published: 04/15/2010
• Est. Priority Date: 10/10/2008
• Status: Abandoned Application

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: TSUKAHARA, Jiro
• Application Number:
  US12/576,725
• Publication Number:
  US 20100090218A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 31/0216 Coatings H01L31/041 takes precedence
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells

Abstract

A sealed device having a substrate, a device having a semiconductor or electroconductive layer comprising zinc and oxygen, and a gas-barrier laminate comprising an organic region and an inorganic region can protect the device from deterioration by water vapor.

Claims

1. A sealed device having in that order:

a substrate,

a device having a semiconductor layer comprising zinc and oxygen or an electroconductive layer comprising zinc and oxygen, and

a gas-barrier laminate comprising an organic layer or an organic region, and comprising an inorganic layer or an inorganic region.

2. The sealed device according to claim 1, which has a silicon hydronitride layer between the device and the gas-barrier laminate.

3. The sealed device according to claim 2, wherein the device on the substrate is sealed with the silicon hydronitride layer.

4. The sealed device according to claim 3, wherein the device sealed with the silicon hydronitride layer is further sealed with the gas-barrier laminate.

5. The sealed device according to claim 2, wherein the silicon hydronitride layer comprises oxygen atom in an amount of at most 50% by atom relative to nitrogen atom in the silicon hydronitride layer.

6. The sealed device according to claim 2, wherein the silicon hydronitride layer has a hydrogen/nitrogen atomic ratio of from 0.1 to 3.

7. The sealed device according to claim 2, wherein the silicon hydronitride layer has a density of from 1.8 to 2.7 g/m³.

8. The sealed device according to claim 1, wherein the semiconductor layer or the electroconductive layer comprises zinc oxide.

9. The sealed device according to claim 1, wherein the gas-barrier laminate comprises at least two organic layers and at least two inorganic layers that are alternately laminated.

10. The sealed device according to claim 1, wherein the substrate is a flexible substrate.

11. The sealed device according to claim 1, wherein the inorganic region or the inorganic layer comprises aluminium oxide.

12. The sealed device according to claim 1, wherein the inorganic region or the inorganic layer comprises silicon oxide.

13. The sealed device according to claim 1, wherein the organic region or the organic layer comprises an acrylate polymer.

14. The sealed device according to claim 1, wherein the device is a solar cell.

15. The sealed device according to claim 1, wherein the device is a thin-film transistor.