BIOSENSOR AND MANUFACTURING METHOD THEREOF

• US 20100090254A1
• Filed: 11/22/2007
• Published: 04/15/2010
• Est. Priority Date: 12/04/2006
• Status: Abandoned Application

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Kim, Ansoon, Zyung, Taehyoung, Park, Chan-Woo, Ahn, Chang-Geun, Ah, Chil-Seong, Lee, Seongjae, Park, Seon-Hee, Yu, Han-Young, Baek, In-Bok, Yang, Jong-Heon
• Application Number:
  US12/517,553
• Publication Number:
  US 20100090254A1
• Time in Patent Office: Days
• US Class Current: 257/253
• CPC Class Codes: G01N 27/4145 specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
• CPC Class Codes: G01N 33/5438 Electrodes

Abstract

Provided is a biosensor which can detect a specific biomaterial by an interaction between target molecules and probe molecules, and a manufacturing method thereof. The biosensor includes: a first conductive semiconductor substrate; a second conductive doping layer formed on the semiconductor substrate; an electrode formed on top of both opposite ends of the doping layer; and probe molecules immobilized on the doping layer.

Claims

1. A biosensor, comprising:

a first conductive semiconductor substrate;

a second conductive doping layer formed on the first conductive semiconductor substrate;

an electrode formed on top of both opposite ends of the doping layer; and

probe molecules immobilized on the doping layer.

2. The biosensor of claim 1, wherein the semiconductor substrate and the doping layer are electrically separated from each other by junction isolation.

3. The biosensor of claim 1, wherein the doping layer is an epitaxial layer.

4. The biosensor of claim 1, wherein the doping layer is an ion implantation layer or a diffusion layer.

5. The biosensor of claim 1, wherein the doping layer is provided in plural, each doping layer having a different probe molecule immobilized thereon.

6. The biosensor of claim 1, wherein the semiconductor substrate and the doping layer are N-type and P-type, or P-type and N-type, respectively, to complement each other.

7. The biosensor of claim 1, further comprising a fluid tube for providing a fluid path in a region of the doping layer on which the probe molecules are immobilized.

8. The biosensor of claim 1, wherein the semiconductor substrate is a bulk silicon substrate.

9. The biosensor of claim 1, wherein the doping layer and the electrode form an ohmic contact.

10. The biosensor of claim 1, wherein the probe molecules are formed of any one selected from the group consisting of antigens, antibodies, DNA, proteins and a combination thereof.

11. A method for manufacturing a biosensor, comprising the steps of:

a) forming a second conductive doping layer on a first conductive semiconductor substrate;

b) forming an electrode on top of both opposite ends of the doping layer; and

c) immobilizing probe molecules on the doping layer.

12. The method of claim 11, wherein the semiconductor substrate and the doping layer are electrically separated from each other by junction isolation.

13. The method of claim 11, wherein the semiconductor substrate and the doping layer are N-type and P-type or P-type and N-type, respectively, to complement each other.

14. The method of claim 11, wherein the doping layer is formed by growing an epitaxial layer on top of the semiconductor layer and doping impurities simultaneously through in-situ method.

15. The method of claim 11, wherein the doping layer is formed on the surface of the semiconductor substrate by using an ion implantation method or a thermal diffusion method.

16. The method of claim 15, further comprising the step of performing thermal treatment after the ion implantation.

17. The method of claim 11, further comprising the step of forming a channel region and a pad region by patterning the doping layer.

18. The method of claim 17, wherein the patterning is performed by any one of photolithography, electron beam lithography, ion-beam lithography, and x-ray lithography.

19. The method of claim 11, further comprising the step of forming a fluid tube for providing a fluid path in a region of the doping layer on which the probe molecules are immobilized.

20. The method of claim 11, wherein the semiconductor substrates is a bulk silicon substrate.

21. The method of claim 11, wherein the doping layer and the electrode form an ohmic contact.

22. The method of claim 11, wherein the probe molecules are formed of any one selected from the group consisting of antigens, antibodies, DNA, proteins, and a combination thereof.