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TRANSISTOR STRUCTURE HAVING DUAL SHIELD LAYERS

  • US 20100090273A1
  • Filed: 10/09/2008
  • Published: 04/15/2010
  • Est. Priority Date: 10/09/2008
  • Status: Active Grant
First Claim
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1. A device, comprising:

  • a transistor having a gate, a drain region, and a source region where the drain and the source region are of a first conductivity type;

    a trench in proximity to the drain region of the device where the trench has a sidewall and a major surface;

    a first dielectric layer overlying the sidewall and the major surface of the trench; and

    a first conductive layer overlying the sidewall of the trench where the first conductive layer does not overlie a majority of the major surface of the trench.

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