TRANSISTOR STRUCTURE HAVING DUAL SHIELD LAYERS
First Claim
1. A device, comprising:
- a transistor having a gate, a drain region, and a source region where the drain and the source region are of a first conductivity type;
a trench in proximity to the drain region of the device where the trench has a sidewall and a major surface;
a first dielectric layer overlying the sidewall and the major surface of the trench; and
a first conductive layer overlying the sidewall of the trench where the first conductive layer does not overlie a majority of the major surface of the trench.
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Accused Products
Abstract
A semiconductor device is formed having lower gate to drain capacitance. A trench (80) is formed adjacent to a drain (20) of the semiconductor device. Trench (80) has a sidewall surface (100) and a surface (90). A doped region (110) is implanted through the sidewall surface (100) of trench (80). A dielectric layer (150) overlies the sidewall surface (100) of trench (80). A shield layer (170) overlies the dielectric layer (150). The shield layer (170) is between a portion of drain (20) and a portion of the gate and gate interconnect of the semiconductor device thereby reducing gate to drain capacitance. The shield layer (170) overlies a minority portion of the surface (90) of trench (80). A second shield layer (270) further reduces gate to drain capacitance.
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Citations
26 Claims
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1. A device, comprising:
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a transistor having a gate, a drain region, and a source region where the drain and the source region are of a first conductivity type; a trench in proximity to the drain region of the device where the trench has a sidewall and a major surface; a first dielectric layer overlying the sidewall and the major surface of the trench; and a first conductive layer overlying the sidewall of the trench where the first conductive layer does not overlie a majority of the major surface of the trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of forming a trench region in a semiconductor substrate, the method comprising:
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etching a trench in the substrate having a sidewall and a major surface; depositing a first dielectric layer overlying the sidewall and the major surface of the trench; depositing a first conductive layer overlying the first dielectric layer; and etching at least a majority of the first conductive layer overlying the major surface of the trench. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A transistor, comprising:
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a substrate of a first conductivity type; an epitaxial layer of the first conductivity type overlying the substrate; a trench in the epitaxial layer having a sidewall and a major surface; a first shield layer overlying the sidewall of the trench and overlying a minority of the major surface of the trench; and a pedestal overlying a portion of the epitaxial layer and a portion of the trench, the pedestal having a sidewall and a major surface. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification