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Shielded gate trench (SGT) MOSFET devices and manufacturing processes

  • US 20100090276A1
  • Filed: 12/11/2009
  • Published: 04/15/2010
  • Est. Priority Date: 02/17/2006
  • Status: Active Grant
First Claim
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1. A semiconductor power device comprising a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate wherein:

  • at least one of said cells constituting an active cell having a source region disposed next to a trenched gate electrically connecting to a gate pad and surrounding said cell wherein said trenched gate further having a bottom shielding electrode filled with a gate material disposed below and insulated from said trenched gate; and

    at least one of said cells constituting a source contacting cell surrounded by said trench with a portion functioning as a source connecting trench filled with said gate material for electrically connecting between said bottom shielding electrode and a source metal disposed directly on top of said source connecting trench wherein said source connecting trench is formed at a location where two trenches intersect.

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