HIGH-POWER DEVICE HAVING THERMOCOUPLE EMBEDDED THEREIN AND METHOD FOR MANUFACTURING THE SAME

• US 20100090329A1
• Filed: 09/17/2007
• Published: 04/15/2010
• Est. Priority Date: 09/28/2006
• Status: Active Grant

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Uhm, Man-Seok, Kwak, Chang-Soo, Yom, In-Bok
• Granted Patent: US 8,294,247 B2
• Time in Patent Office: Days
• US Class Current: 257/690
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/34 Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements thermal treatment apparatus H01L21/00
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/1815 Shape

Abstract

Provided is a high-power device having a thermocouple (thermoelectric couple) for measuring the temperature of a transistor constituting a high-power device. The high-power device includes a heating element, a thermocouple formed adjacent to the heating element, and a dielectric body formed between the heating element and the thermocouple.

Claims

1. A high-power device, comprising:

a heating element;

a thermocouple formed adjacent to the heating element; and

a dielectric body formed between the heating element and the thermocouple.

2. The high-power device of claim 1, wherein the thermocouple includes first and second thin films made of two kinds of metals and alloys.

3. The high-power device of claim 1, wherein one ends of the first and the second thin films are joined to each other to form a hot junction.

4. The high-power device of claim 3, wherein the center part of the heating element is aligned to correspond to the hot junction.

5. The high-power device of claim 1, further comprising:

a via contact connected to the thermocouple; and

a pad for connecting the via contact to an external lead frame.

6. A high-power device, comprising:

a first substrate;

a thermocouple formed on the first substrate;

a second substrate formed on the first substrate so as to cover the thermocouple; and

a gate electrode formed on the second substrate so as to correspond to the thermocouple.

7. The high-power device of claim 6, wherein the thermocouple includes first and second thin films made of two kinds of metals or alloys.

8. The high-power device of claim 6, wherein one ends of the first and the second thin films are joined to each other to form a hot junction.

9. The high-power device of claim 8, wherein the center part of the gate electrode is aligned to correspond to the hot junction.

10. The high-power device of claim 6, wherein a recess groove is formed on the second substrate at a portion corresponding to the thermocouple.

11. The high-power device of claim 6, further comprising:

a via contact connected to the thermocouple; and

a pad for connecting the via contact to an external lead frame.

12. A method for manufacturing a high-power device, comprising the steps of:

a) forming a first thin film on a first substrate;

b) forming a second thin film, one end of which is joined to the first thin film to form a thermocouple with the first thin film;

c) forming a second substrate on the first substrate so as to cover the first and the second thin films; and

d) forming a gate electrode on the second substrate so as to correspond to the junction of the first and the second thin films.

13. The method of claim 12, further comprising, after the second substrate formation step b), the step of forming a groove by recessing the second substrate at a portion corresponding to the junction of the first and the second thin films.

14. The method of claim 13, wherein the gate electrode is formed on the groove.