HIGH-POWER DEVICE HAVING THERMOCOUPLE EMBEDDED THEREIN AND METHOD FOR MANUFACTURING THE SAME
First Claim
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1. A high-power device, comprising:
- a heating element;
a thermocouple formed adjacent to the heating element; and
a dielectric body formed between the heating element and the thermocouple.
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Abstract
Provided is a high-power device having a thermocouple (thermoelectric couple) for measuring the temperature of a transistor constituting a high-power device. The high-power device includes a heating element, a thermocouple formed adjacent to the heating element, and a dielectric body formed between the heating element and the thermocouple.
21 Citations
14 Claims
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1. A high-power device, comprising:
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a heating element; a thermocouple formed adjacent to the heating element; and a dielectric body formed between the heating element and the thermocouple. - View Dependent Claims (2, 3, 4, 5)
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6. A high-power device, comprising:
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a first substrate; a thermocouple formed on the first substrate; a second substrate formed on the first substrate so as to cover the thermocouple; and a gate electrode formed on the second substrate so as to correspond to the thermocouple. - View Dependent Claims (7, 8, 9, 10, 11)
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12. A method for manufacturing a high-power device, comprising the steps of:
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a) forming a first thin film on a first substrate; b) forming a second thin film, one end of which is joined to the first thin film to form a thermocouple with the first thin film; c) forming a second substrate on the first substrate so as to cover the first and the second thin films; and d) forming a gate electrode on the second substrate so as to correspond to the junction of the first and the second thin films. - View Dependent Claims (13, 14)
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Specification