SUBSTRATE FOR GROWING WURTZITE TYPE CRYSTAL AND METHOD FOR MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE

• US 20100092800A1
• Filed: 10/01/2009
• Published: 04/15/2010
• Est. Priority Date: 10/09/2008
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Hoshino, Katsuyuki, Iwasaki, Tatsuya, Itagaki, Naho
• Granted Patent: US 8,679,650 B2
• Time in Patent Office: Days
• US Class Current: 428/697
• CPC Class Codes: C30B 23/025 characterised by the substrate
• CPC Class Codes: C30B 25/183 being provided with a buffer layer, e.g. a lattice matching layer
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: C30B 29/406 Gallium nitride

Abstract

A laminated structure comprises a first layer comprising a crystal with six-fold symmetry, and a second layer comprising a metal oxynitride crystal formed on the first layer, wherein the second layer comprises at least one element selected from the group consisting of In, Ga, Si, Ge and Al, N, O and Zn, as main elements, and wherein the second layer has in-plane orientation.

Claims

1. A substrate for growing a wurtzite type crystal comprising a laminated structure a first layer of which comprises a crystal with six-fold symmetry and a second layer of which comprises a metal oxynitride crystal formed on the first layer,

wherein the second layer comprises at least one element selected from the group consisting of In, Ga, Si, Ge and Al, N, O and Zn, as main elements, and wherein the second layer has in-plane orientation.

2. The substrate for growing a wurtzite type crystal according to claim 1, wherein the first layer is a wurtzite type crystal or Al₂O₃ crystal.

3. The substrate for growing a wurtzite type crystal according to claim 1, wherein the second layer is a crystal of wurtzite type.

4. The substrate for growing a wurtzite type crystal according to claim 1, wherein the a-axis lattice constant of the second layer is in the range of 0.320 nm to 0.358 nm.

5. The substrate for growing a wurtzite type crystal according to claim 1, wherein the FWHM of an X-ray rocking curve of a (002) plane of the second layer is 1 degree or less.

6. The substrate for growing a wurtzite type crystal according to claim 1, wherein the first layer comprises a wurtzite type crystal selected from the group consisting of GaN and ZnO, and wherein the second layer comprises Zn_(x)In_(1-x)O_(y)N_(1-y) wherein 0.1≦

x≦

0.9 and 0.1≦

y≦

0.9.

7. The substrate for growing a wurtzite type crystal according to claim 1, wherein the first layer comprises a wurtzite type crystal selected from the group consisting of GaN and ZnO, and wherein the second layer comprises Zn_(x)Ga_(1-x)O_(y)N_(1-y) wherein 0.1≦

x≦

0.9 and 0.1≦

y≦

0.9.

8. The substrate for growing a wurtzite type crystal according to claim 1, wherein the first layer comprises a Al₂O₃ crystal, and wherein the second layer comprises Zn_(x)In_(1-x)O_(y)N_(1-y) wherein 0.1≦

x≦

0.9 and 0.1≦

y≦

0.9.

9. The substrate for growing a wurtzite type crystal according to claim 1, wherein the first layer comprises a Al₂O₃ crystal, and wherein the second layer comprises Zn_(x)Ga_(1-x)O_(y)N_(1-y) wherein 0.1≦

x≦

0.9 and 0.1≦

y≦

0.9.

10. A semiconductor device using a substrate for growing a wurtzite type crystal according to claim 1 as a substrate.

11. A method for manufacturing a substrate for growing a wurtzite type crystal comprising a laminated structure, which comprises the step of forming a second layer comprising a metal oxynitride crystal having in-plane orientation on a first layer comprising a crystal with six-fold symmetry, in an atmosphere comprising nitrogen,

wherein the second layer comprises at least one element selected from the group consisting of In, Ga, Si, Ge and Al, N, O and Zn, as main elements.

12. The method for manufacturing a substrate for growing a wurtzite type crystal according to claim 11, wherein the second layer is formed by sputtering.

13. The method for manufacturing a substrate for growing a wurtzite type crystal according to claim 11, wherein the film deposition rate of the second layer is 10 nm/min or less.