METHOD OF BONDING TWO SUBSTRATES
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Abstract
The invention relates to a method of forming a structure comprising a thin layer of semiconductor material transferred from a donor substrate onto a second substrate, wherein two different atomic species are co-implanted under certain conditions into the donor substrate so as to create a weakened zone delimiting the thin layer to be transferred. The two different atomic species are implanted so that their peaks have an offset of less than 200 Å in the donor substrate, and the substrates are bonded together after roughening at least one of the bonding surfaces.
31 Citations
46 Claims
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1-27. -27. (canceled)
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28. A method of forming a structure comprising a thin layer of semiconductor material transferred from a donor substrate onto a second substrate, which method comprises:
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co-implanting two different atomic species into the donor substrate so as to create a weakened zone delimiting the thin layer to be transferred, each of the species having a maximum concentration at a so-called “
peak”
depth, with the two different atomic species implanted so that their peaks have an offset of less than 200 Å
in the donor substrate,bonding the donor and second substrates together by; cleaning the surface of one or both of the substrates in a manner to provide a cleaned surface that is slightly roughened compared to a conventionally polished surface prior to placing the substrates in contact; heating at least one or both of the substrates prior to placing the substrates in contact; and retaining the heating at least until the substrates are in surface to surface contact to reduce or eliminate edge voids during bonding; and transferring part of the donor substrate to the second substrate so as to form the thin layer on the second substrate. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46)
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Specification