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Method for Depositing Conformal Amorphous Carbon Film by Plasma-Enhanced Chemical Vapor Deposition (PECVD)

  • US 20100093187A1
  • Filed: 10/12/2009
  • Published: 04/15/2010
  • Est. Priority Date: 10/14/2008
  • Status: Active Grant
First Claim
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1. A method of forming an amorphous carbon layer on a substrate, comprising:

  • positioning a substrate in a substrate processing chamber;

    introducing a hydrocarbon source having a carbon to hydrogen atom ratio greater than 1;

    2 into the processing chamber;

    introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1;

    2 or greater;

    generating a plasma in the processing chamber at a RF power of 1 W/cm2 or less, a pressure of 2 Torr or greater, and a temperature of about 300°

    C. to about 480°

    C.; and

    forming a conformal amorphous carbon layer on the substrate.

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