APPARATUS FOR SUPPORTING SUBSTRATE AND PLASMA ETCHING APPARATUS HAVING THE SAME
First Claim
1. A plasma etching apparatus, comprising:
- a chamber comprising a reaction compartment;
a plasma generator disposed at the chamber;
a mask part disposed in the reaction compartment;
a substrate support disposed under the mask part; and
a gas supply unit configured to supply a process gas to the reaction compartment.
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Accused Products
Abstract
Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge.
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Citations
25 Claims
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1. A plasma etching apparatus, comprising:
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a chamber comprising a reaction compartment; a plasma generator disposed at the chamber; a mask part disposed in the reaction compartment; a substrate support disposed under the mask part; and a gas supply unit configured to supply a process gas to the reaction compartment. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A substrate supporting apparatus comprising:
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a body portion on which a substrate is seated; a first electrode provided at a central region inside the body portion; a second electrode provided at an edge region inside the body portion; a fixing power supply unit configured to supply power to the first electrode to fix the substrate; and a bias power supply unit configured to supply bias power to the second electrode. - View Dependent Claims (18, 19, 20)
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21. A plasma etching apparatus comprising:
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a chamber having a reaction compartment; a mask part provided in the reaction compartment; and a substrate support comprising a body portion on which a substrate is seated, a first electrode provided at a central region inside a body portion, a second electrode provided at an edge region inside the body portion, a fixing power supply unit configured to supply power to the first electrode to fix the substrate, and a bias power supply unit configured to supply bias power to the second electrode. - View Dependent Claims (22)
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23. A plasma etching apparatus, comprising:
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a substrate support configured to support a center region of a substrate; a mask part disposed above the substrate support to cover the center region of the substrate; a chamber configured to accommodate the substrate support and the mask part, the chamber comprising a heating unit disposed at a wall thereof; a plasma generator configured to generate plasma in a region surrounded by the substrate support, the mask part and a sidewall of the chamber; and a gas supply unit configured to supply a process gas to an inner region of the chamber. - View Dependent Claims (24, 25)
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Specification