APPARATUS FOR GENERATING REMOTE PLASMA

• US 20100096367A1
• Filed: 08/25/2009
• Published: 04/22/2010
• Est. Priority Date: 10/20/2008
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Industry-University Cooperation Foundation Hanyang University
• Inventors: Kim, Hyung-Chul, JEON, Hyeong-Tag, Woo, Sang-Hyun, Chung, Chin-Wook
• Granted Patent: US 8,207,470 B2
• Time in Patent Office: Days
• US Class Current: 219/121.36
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/32532 Electrodes

Abstract

Provided is an apparatus for generating remote plasma, which can improve thin-film quality by preventing an arc at a bias electrode. The apparatus includes a radio frequency (RF) electrode installed inside an upper portion of a chamber, a bias electrode installed apart from the RF electrode, and including a plurality of through holes through which plasma passes, wherein a bias power is supplied to the bias electrode, a plasma generating unit formed between the RF electrode and the bias electrode, wherein a plasma gas is supplied to the plasma generating unit, and a ground electrode installed under and spaced apart from the bias electrode, and including plasma through holes corresponding to the through holes of the bias electrode, wherein a pulsed DC bias of a second voltage level, which has a first voltage level periodically, is applied to the bias electrode.

Claims

1. An apparatus for generating remote plasma, comprising:

a radio frequency (RF) electrode installed inside an upper portion of a chamber;

a bias electrode installed apart from the RF electrode, and including a plurality of through holes through which plasma passes, wherein a bias power is supplied to the bias electrode;

a plasma generating unit formed between the RF electrode and the bias electrode, wherein a plasma gas is supplied to the plasma generating unit; and

a ground electrode installed under and spaced apart from the bias electrode, and including plasma through holes corresponding to the through holes of the bias electrode,

wherein a pulsed DC bias of a second voltage level, which has a first voltage level periodically, is applied to the bias electrode.

2. The apparatus of claim 1, wherein an entire surface of the bias electrode is coated with an etch-resistance metal containing tungsten or titanium.

3. The apparatus of claim 2, wherein a capacitor for removing charges remaining on the bias electrode is connected to a bias power source in series.

4. The apparatus of claim 1, wherein the RF electrode includes a plurality of through holes for supplying the plasma gas to the plasma generating unit.

5. The apparatus of claim 1, wherein the bias electrode is made of a metal, and a surface of the bias electrode is anodized.

6. The apparatus of claim 1, wherein a shower head is installed under the ground electrode,

the shower head including a passage through which a source gas or purge gas passes, and another passage through which the plasma generated in the plasma generating unit passes.

12. The apparatus of claim 1, wherein the first voltage level is a positive voltage level, and the second voltage level is a negative voltage level.

13. The apparatus of claim 1, wherein the first voltage level is a negative voltage level, and the second voltage level is a positive voltage level.

7. An apparatus for generating remote plasma, comprising:

an RF antenna installed on an exterior of a chamber;

a plasma generating unit formed adjacent to the RF antenna inside the chamber, and generating plasma; and

a bias electrode installed under the plasma generating unit, and including a plurality of through holes through which the generated plasma passes, wherein a bias power is supplied to the bias electrode,

wherein a pulsed DC bias of a second voltage level, which has a first voltage level, is applied to the bias electrode.

8. The apparatus of claim 7, wherein an entire surface of the bias electrode is coated with an etch-resistance metal containing tungsten or titanium.

9. The apparatus of claim 8, wherein a capacitor for removing charges remaining on the bias electrode is connected to a bias power source in series.

14. The apparatus of claim 7, wherein the first voltage level is a positive voltage level, and the second voltage level is a negative voltage level.

15. The apparatus of claim 7, wherein the first voltage level is a negative voltage level, and the second voltage level is a positive voltage level.

10. An apparatus for generating remote plasma, comprising:

a plasma generating unit generating a plasma gas, and including an inductively coupled plasma (ICP) coil winding therearound;

a bias electrode installed under the plasma generating unit, and including a plurality of plasma through holes through which plasma passes; and

a reacting unit formed under the bias electrode, and including a substrate loading unit on which a substrate is mounted, and a gas supply unit installed on the substrate loading unit to supply a source gas or purge gas,

wherein a pulsed DC bias of a second voltage level, which has a first voltage level, is applied to the bias electrode.

11. The apparatus of claim 10, wherein the gas supply unit includes a ring type supply unit having a plurality of spray holes formed in a bottom thereof.

16. The apparatus of claim 10, wherein the first voltage level is a positive voltage level, and the second voltage level is a negative voltage level.

17. The apparatus of claim 10, wherein the first voltage level is a negative voltage level, and the second voltage level is a positive voltage level.