DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

• US 20100096645A1
• Filed: 10/15/2009
• Published: 04/22/2010
• Est. Priority Date: 10/17/2008
• Status: Abandoned Application

• Current Assignee: Panasonic Liquid Crystal Display Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Hitachi Displays Limited (Japan Display Incorporated)
• Inventors: Kuriyagawa, Takeshi, Noda, Takeshi, Miyazawa, Toshio, Kimura, Yasukazu, Kaitoh, Takuo, Sonoda, Daisuke
• Application Number:
  US12/579,428
• Publication Number:
  US 20100096645A1
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask

Abstract

A manufacturing method of a display device and a display device which can reduce the number of times that an insulation substrate is put into a CVD device and is taken out from the CVD device are provided. The manufacturing method of a display device includes the steps of forming a conductive layer including first electrode films and second electrode films, a first insulation layer, semiconductor films, a second insulation layer and a protective layer on an insulation substrate; forming first resist films having a predetermined thickness which are arranged in first regions above the semiconductor films, opening portions which are arranged in second regions above the second electrode films and second resist films having a large thickness which are arranged in regions other than the first regions and the second regions on the protective layer; etching portions below the second regions, removing the first resist films by ashing; forming first holes which reach the semiconductor films below the first regions and second holes which reach the second electrode films below the second regions; removing the second resist films, and forming lines which are connected to the semiconductor films and lines which are connected to the second electrode films.

Claims

1. A manufacturing method of a display device comprising the steps of:

forming a conductive layer which includes first electrode films and second electrode films which are arranged in a spaced-apart manner from the first electrode films on an insulation substrate;

forming a first insulation layer on the insulation substrate on which the conductive layer is formed;

forming semiconductor films each of which partially overlaps with at least a portion of the first electrode film in plane on the first insulation layer;

forming a second insulation layer on the insulation substrate on which the semiconductor films are formed;

forming a protective layer on the insulation substrate on which the second insulation layer is formed;

forming, on the protective film, a first resist film having a predetermined thickness in first regions each of which overlaps with at least a portion of each semiconductor film in plane, defining second regions where the resist film is not formed in regions each of which partially overlaps with at least a portion of the second electrode film in plane, and forming second resist films each having a thickness larger than a thickness of the first resist film in regions other than the first regions and the second regions;

removing at least a portion of the protective layer, the first insulation layer and the second insulation layer below the second region by etching;

removing the first resist films by ashing;

forming first holes each of which reaches the semiconductor film by exposing the semiconductor film below the first region by etching, and forming second holes each of which reaches the second electrode film below the second region;

removing the second resist film; and

forming lines which are electrically connected to the semiconductor films via the first holes and lines which are electrically connected to the second electrode films via the second holes.

2. A manufacturing method of a display device according to claim 1, wherein two first regions are formed in a spaced-apart manner from each other in a region which overlaps with the semiconductor film.

3. A manufacturing method of a display device according to claim 1, wherein the first electrode film constitutes a thin film transistor together with the semiconductor film.

4. A manufacturing method of a display device according to claim 1, wherein the protective layer contains silicon nitride.

5. A manufacturing method of a display device according to claim 1, wherein the first insulation layer contains silicon oxide.

6. A manufacturing method of a display device according to claim 1, wherein the second electrode film below the second region is exposed in the step of removing at least the portion of the protective layer, the first insulation layer and the second insulation layer.

7. A manufacturing method of a display device according to claim 1, wherein the second electrode film below the second region is not exposed in the step of removing at least the portion of the protective layer, the first insulation layer and the second insulation layer.

8. A manufacturing method of a display device according to claim 1, wherein the first electrode film and the second electrode film are made of the same material.

9. A manufacturing method of a display device according to claim 8, wherein the first electrode film and the second electrode film are made of any one selected from a group consisting of Mo, W and an MoW alloy.

10. A display device comprising:

an insulation substrate;

a first conductive layer which is formed on the insulation substrate and from which first electrode films and second electrode films which are formed in a spaced-apart manner from the first electrode films are formed;

a first insulation layer which is formed on the first conductive layer;

semiconductor layers each of which is formed on the first insulation layer and overlaps with at least a portion of the first electrode film in plane;

a second insulation layer which is formed on the semiconductor layer;

a protective layer which is formed on the second insulation layer;

a plurality of first holes which penetrate the protective layer and the second insulation layer and reach the semiconductor film;

one or a plurality of second holes which penetrate the protective layer, the second insulation layer and the first insulation layer and reach the second electrode film; and

lines which are electrically connected to the semiconductor films via the first holes and lines which are electrically connected to the second electrode films via the second holes, wherein

the second hole has a stepped portion in an inside thereof.

11. A display device according to claim 10, wherein the stepped portion is formed on the second insulation layer.

12. A display device according to claim 10, wherein the first electrode film and the second electrode film are made of the same material.

13. A display device according to claim 12, wherein the first electrode film and the second electrode film are made of any one selected from a group consisting of Mo, W and an MoW alloy.