SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS HAVING THEREOF

• US 20100096646A1
• Filed: 10/16/2009
• Published: 04/22/2010
• Est. Priority Date: 10/17/2008
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: JEONG, Hwan Hee
• Granted Patent: US 8,399,890 B2
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45139 Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/207 Diameter ranges
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H05B 45/42 Antiparallel configurations

Abstract

Embodiments relate to a semiconductor light emitting device and a light emitting apparatus comprising the same. The semiconductor light emitting device according to embodiments comprises a plurality of light emitting cells comprising a plurality of compound semiconductor layers; a plurality of ohmic contact layers on the light emitting cells; a first insulating layer on the ohmic contact layer; a second electrode layer electrically connected to a first light emitting cell of the light emitting cells; and a plurality of interconnection layers connecting the light emitting cells in series.

Claims

1. A semiconductor light emitting device, comprising:

a plurality of light emitting cells comprising a plurality of compound semiconductor layers;

a plurality of ohmic contact layers on the light emitting cells;

a first insulating layer on the ohmic contact layer;

a second electrode layer electrically connected to a first light emitting cell of the light emitting cells; and

a plurality of interconnection layers connecting the light emitting cells in series.

2. The semiconductor light emitting device according to claim 1, comprising a first electrode under an nth light emitting cell of the light emitting cells.

3. The semiconductor light emitting device according to claim 1, comprising a second electrode under a first ohmic contact layer of the ohmic contact layers.

4. The semiconductor light emitting device according to claim 1, wherein:

the second electrode layer is formed on the first insulating layer and formed on a first ohmic contact layer of the ohmic contact layers, and

the semiconductor light emitting device comprises a conductive support member on the second electrode layer.

5. The semiconductor light emitting device according to claim 1, wherein a one end of the interconnection layer is connected to a one-side light emitting cell, and the other end of the interconnection layer is connected to an other-side light emitting cell adjacent to the one-side light emitting cell.

6. The semiconductor light emitting device according to claim 5, comprising a second insulating layer formed between the interconnection layer and the light emitting cell.

7. The semiconductor light emitting device according to claim 5, wherein the light emitting cell comprises:

a second conductive semiconductor layer under the ohmic contact layer;

an active layer under the second conductive semiconductor layer; and

a first conductive semiconductor layer under the active layer.

8. The semiconductor light emitting device according to claim 7, wherein a first portion of the interconnection layer electrically connects to the first conductive semiconductor layer of an one-side light emitting cell and a second portion of the interconnection layer electrically connects to the ohmic contact layer formed on an other-side light emitting cell, respectively.

9. A semiconductor light emitting device, comprising:

a plurality of light emitting cell arrays comprising a plurality of compound semiconductor layers;

a plurality of ohmic contact layers on the light emitting cell arrays;

a first insulating layer on the ohmic contact layer;

a plurality of second electrode layers electrically connected to a first light emitting cell of a one end of the each light emitting cell array;

a plurality of interconnection layers connecting the light emitting cell arrays in series; and

a connection node electrically connecting both ends of the light emitting cell arrays.

10. The semiconductor light emitting device according to claim 9, wherein the light emitting cell comprises:

an N-type semiconductor layer;

an active layer on the N-type semiconductor layer; and

a P-type semiconductor layer between the active layer and the ohmic contact layer.

11. The semiconductor light emitting device according to claim 9, wherein a first polarity of an Alternating Current (AC) power is inputted to one ends of the light emitting cell arrays, and a second polarity of the AC power is inputted to other ends of the light emitting cell arrays.

12. The semiconductor light emitting device according to claim 9, wherein the light emitting cell arrays comprise:

a first light emitting cell array in which a plurality of light emitting cells are connected in series; and

a second light emitting cell array in which a plurality of light emitting cells are connected in series, and

the light emitting cell arrays are alternately driven per half cycle at an Alternating Current (AC) power.

13. The semiconductor light emitting device according to claim 10, wherein:

the interconnection layer connects an N-type semiconductor layer of a one-side light emitting cell and the ohmic contact layer on an other-side light emitting cell adjacent to the N-type semiconductor layer, and

the semiconductor light emitting device comprises a plurality of second insulating layers under the interconnection layers.

14. The semiconductor light emitting device according to claim 13, comprising a plurality of conductive support members on the second electrode layers.

15. The semiconductor light emitting device according to claim 13, wherein the light emitting cell arrays are connected in series, in parallel or in anti-parallel.

16. A light emitting apparatus, comprising:

a plurality of semiconductor light emitting devices comprises a plurality of light emitting cell arrays comprising a plurality of compound semiconductor layers, a plurality of ohmic contact layers on the light emitting cell arrays, a first insulating layer on the ohmic contact layer, a second electrode layer on a first ohmic contact layer of the ohmic contact layers, a first electrode electrically connected to a nth light emitting cell of the light emitting cells, and a plurality of interconnection layers connecting the light emitting cells in series; and

a connection node electrically connecting the semiconductor light emitting devices.

17. The light emitting apparatus according to claim 16, wherein the semiconductor light emitting devices are connected by the connection node in series, in parallel or in anti-parallel.

18. The light emitting apparatus according to claim 16, comprising a substrate or a package body on which at least one of the semiconductor light emitting devices is mounted.

19. The light emitting apparatus according to claim 16, wherein:

the semiconductor light emitting devices are connected in anti-parallel, and

at least one of a resistor, a rectifier, a capacitor and an Alternating Current (AC) power is connected to both ends of the semiconductor light emitting devices.

20. The light emitting apparatus according to claim 16, wherein the semiconductor light emitting devices have the same color, peak wavelength, chromaticity and brightness, or have different colors, peak wavelengths, chromaticities and brightnesses.