NANOSTRUCTURED BARIUM STRONTIUM TITANATE (BST) THIN-FILM VARACTORS ON SAPPHIRE

• US 20100096678A1
• Filed: 10/20/2008
• Published: 04/22/2010
• Est. Priority Date: 10/20/2008
• Status: Abandoned Application

• Current Assignee: University of Dayton
• Original Assignee: University of Dayton
• Inventors: Subramanyam, Guru
• Application Number:
  US12/254,256
• Publication Number:
  US 20100096678A1
• Time in Patent Office: Days
• US Class Current: 257/295
• CPC Class Codes: H01P 1/10 for switching or interrupting in systems using reflection or reradiation of radio, acoustic or other waves G01S7/034

Abstract

Varactor shunt switches based on a nonlinear dielectric tunability of Ba_xSr_(1−x)TiO₃ (BST) thin-film on a sapphire substrates are presented. Nanostructured BST thin-films with dielectric tunability as high as 4.3:1 can be obtained on sapphire substrates, with very low loss-tangents below 0.025 at zero-bias and 20 GHz. The large capacitance of the varactor at zero bias can shunt the input signal to ground isolating the output port, resulting in the OFF state. When applying a bias voltage of approximately 10 V (a dc electric field of ˜250 kV/cm), the varactor'"'"'s capacitance can be reduced to a minimum, allowing maximum transmission to the output resulting in the ON state. The microwave switching performance of the varactor shunt switch can be compared with the RF MEMS switches for potential applications at microwave and millimeterwave frequencies. Other applications of such BST varactors include tunable filters, phase shifter circuits and impedance matching circuits

Claims

1. A varactor shunt switch for microwave applications, the varactor shunt switch comprising:

a sapphire substrate;

a bottom metal layer stack deposited on the sapphire substrate;

a tunable nanostructured thin-film dielectric layer on the bottom metal layer; and

a top metal layer stack on said tunable thin-film dielectric layer, wherein said top metal layer defines a coplanar waveguide transmission line.

2. The varactor shunt switch of claim 1, wherein the sapphire substrate has a R-plane, C-plane or A-plane orientation.

3. The varactor shunt switch of claim 1, wherein the sapphire substrate has a R-plane orientation.

4. The varactor shunt switch of claim 1, wherein the sapphire substrate has a thickness of about 100 μ

m to about 500 μ

m.

5. The varactor shunt switch of claim 1, wherein the bottom metal layer stack is comprised of gold and platinum and a titanium adhesion layer.

6. The varactor shunt switch of claim 1, wherein the tunable thin-film dielectric layer is barium strontium titanate.

7. The varactor shunt switch of claim 1, wherein the tunable thin-film dielectric layer is nanostructured.

8. The varactor shunt switch of claim 1, wherein the tunable thin-film dielectric layer has an average grain size of less than 100 nm.

9. The varactor shunt switch of claim 1, wherein the tunable thin-film dielectric layer has a grain size that ranges from about 30 nm to about 100 nm.

10. The varactor shunt switch of claim 1, wherein the tunable thin-film dielectric layer is processed at about 30 mT to about 150 mT oxygen partial pressure.

11. The varactor shunt switch of claim 1, further comprising,

an adhesion layer on the sapphire substrate, wherein the adhesion layer is deposited before the deposition of the bottom metal layer stack.

12. The varactor shunt switch of claim 1, wherein the varactor shunt switch has a dielectric tunability of greater than 4.

13. The varactor shunt switch of claim 1, wherein the varactor shunt switch has a dielectric tunability of 4.3.

14. The varactor shunt switch of claim 1, wherein the varactor shunt switch has a loss-tangent below 0.025 at zero bias and 20 GHz.

15. A varactor shunt switch for microwave applications, the varactor shunt switch comprising:

a sapphire substrate;

a bottom metal layer on the sapphire substrate;

a tunable barium strontium titanate thin-film dielectric layer on the bottom metal layer; and

a top metal layer on the tunable thin-film dielectric layer, wherein said top metal layer defines a coplanar waveguide transmission line.

16. A varactor shunt switch for microwave applications, the varactor shunt switch comprising:

a sapphire substrate;

a bottom metal layer on the sapphire substrate;

a tunable nanostructured barium strontium titanate thin-film dielectric layer on the bottom metal layer; and

a top metal layer on the tunable nanostructured thin-film dielectric layer, wherein said top metal layer defines a coplanar waveguide transmission line.