Semiconductor Device and Method of Manufacturing the Same

• US 20100096701A1
• Filed: 03/06/2009
• Published: 04/22/2010
• Est. Priority Date: 10/20/2008
• Status: Active Grant

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Yoo, Min Soo
• Granted Patent: US 7,927,962 B2
• Time in Patent Office: Days
• US Class Current: 257/368
• CPC Class Codes: H01L 21/76264 SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H10B 12/00 Dynamic random access memory [DRAM] devices
• CPC Class Codes: H10B 12/01 Manufacture or treatment
• CPC Class Codes: H10B 12/20 DRAM devices comprising floating-body transistors, e.g. floating-body cells

Abstract

A method of manufacturing a semiconductor device and a semiconductor device manufactured by the method, the method comprising: (a) forming a buffer layer on a semiconductor substrate; (b) patterning the buffer layer in a first direction to form buffer layer patterns having lateral surfaces and being spaced from each other at predetermined intervals; (c) forming a semiconductor epitaxial layer on and between the buffer layer patterns; (d) forming a first trench in the semiconductor epitaxial layer in a second direction perpendicular to the first direction to expose lateral surfaces of the buffer layer patterns; (e) selectively removing the buffer layer patterns exposed by the first trench to form spaces; (f) forming buried insulation films in the spaces formed by removal of the buffer layer patterns, a portion of semiconductor epitaxial layer being disposed between the buried insulation films; (g) removing a portion of the semiconductor epitaxial layer disposed between the buried insulation films to form a second trench in the first direction; and (h) forming device isolation films in the first and second trenches.

Claims

1. A method of manufacturing a semiconductor device, comprising:

(a) forming a buffer layer on a semiconductor substrate;

(b) patterning the buffer layer in a first direction to form buffer layer patterns having lateral surfaces and being spaced from each other at predetermined intervals;

(c) forming a semiconductor epitaxial layer on and between the buffer layer patterns;

(d) forming a first trench in the semiconductor epitaxial layer in a second direction, intersecting the first direction, to expose lateral surfaces of the buffer layer patterns;

(e) selectively removing the buffer layer patterns exposed by the first trench to form spaces;

(f) forming buried insulation films in the spaces formed by removal of the buffer layer patterns, a portion of semiconductor epitaxial layer being disposed between the buried insulation films;

(g) removing a portion of the semiconductor epitaxial layer disposed between the buried insulation films to form a second trench in the first direction; and

(h) forming device isolation films in the first and second trenches.

2. The method according to claim 1, wherein the buffer layer comprises a material that can be selectively etched with respect to the semiconductor substrate and the semiconductor epitaxial layer.

3. The method according to claim 1, wherein the semiconductor substrate is a silicon substrate, the semiconductor epitaxial layer is a silicon epitaxial layer, and the buffer layer is an SiGe layer.

4. The method according to claim 1, wherein the buffer layer comprises a selective etching layer that can be removed through selective etching in (e) and a seed layer serving as a seed of the semiconductor epitaxial layer in (c).

5. The method according to claim 1, wherein, in (d), a depth of the first trench is greater than a depth of the buffer layer pattern.

6. The method according to claim 1, comprising, in (e), removing the buffer layer patterns through a selective wet etching process.

7. The method according to claim 1, comprising, in (g), forming the second trench by removing the semiconductor epitaxial layer formed between the buffer layer patterns in (c).

8. The method according to claim 1, comprising horizontally isolating the semiconductor epitaxial layer by the device isolation films formed in the first and second trenches, and vertically isolating the semiconductor epitaxial layer from the semiconductor substrate by the buried insulation film.

9. The method according to claim 1, wherein, in (d), the second direction is perpendicular to the first direction.

10. A semiconductor device manufactured by a method comprising:

(a) forming a buffer layer on a semiconductor substrate;

(b) patterning the buffer layer in a first direction to form buffer layer patterns having lateral surfaces and being spaced from each other at predetermined intervals;

(c) forming a semiconductor epitaxial layer on and between the buffer layer patterns;

(d) forming a first trench in the semiconductor epitaxial layer in a second direction, intersecting the first direction, to expose lateral surfaces of the buffer layer patterns;

(e) selectively removing the buffer layer patterns exposed by the first trench to form spaces;

(f) forming buried insulation films in the spaces formed by removal of the buffer layer patterns, a portion of the semiconductor epitaxial layer being disposed between the buried insulation films;

(g) removing a portion of the semiconductor epitaxial layer disposed between the buried insulation films to form a second trench in the first direction; and

(h) forming device isolation films in the first and second trenches, wherein the semiconductor epitaxial layer formed on a semiconductor substrate is horizontally isolated by device isolation films and vertically isolated from the semiconductor substrate by a buried insulation film.

11. The semiconductor device according to claim 10, wherein a depth of the device isolation film is greater than a depth of the buried insulation film.

12. The semiconductor device according to claim 10, further comprising:

a gate formed on the semiconductor epitaxial layer isolated by the device isolation film and the buried insulation film;

a source region formed in the semiconductor epitaxial layer; and

a drain region formed in the semiconductor epitaxial layer and spaced from the source region.

13. The semiconductor device according to claim 12, wherein the source region and the drain region are formed on the buried insulation film, and a portion of the semiconductor epitaxial layer between the source region and the drain region thus functions as a floating channel body.

14. The semiconductor device according to claim 10, wherein the buffer layer comprises a material that can be selectively etched with respect to the semiconductor substrate and the semiconductor epitaxial layer.

15. The semiconductor device according to claim 10, wherein the semiconductor substrate is a silicon substrate, the semiconductor epitaxial layer is a silicon epitaxial layer, and the buffer layer is an SiGe layer.

16. The semiconductor device according to claim 10, wherein the buffer layer comprises a selective etching layer that can be removed through selective etching in (e) and a seed layer serving as a seed of the semiconductor epitaxial layer in (c).

17. The semiconductor device according to claim 10 , wherein, in (d), a depth of the first trench is greater than a depth of the buffer layer pattern.

18. The semiconductor device according to claim 10, comprising, in (e), removing the buffer layer patterns through a selective wet etching process.

19. The semiconductor device according to claim 10, comprising, in (g), forming the second trench by removing the semiconductor epitaxial layer formed between the buffer layer patterns in (c).

20. The semiconductor device according to claim 10, wherein, in (d), the second direction is perpendicular to the first direction.