PLASMA SOURCE FOR CHAMBER CLEANING AND PROCESS

• US 20100098882A1
• Filed: 10/19/2009
• Published: 04/22/2010
• Est. Priority Date: 10/21/2008
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Smith, Paul F., Santosa, James, Liang, Qiwei, Chen, Xinglong, Miller, Matthew L., Lubomirsky, Dmitry, Yang, Jang Gyoo
• Application Number:
  US12/581,600
• Publication Number:
  US 20100098882A1
• Time in Patent Office: Days
• US Class Current: 427/569
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: H01J 37/32036 AC powered
• CPC Class Codes: H01J 37/32045 Circuits specially adapted for controlling the glow discharge
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32183 Matching circuits
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream

Abstract

Apparatus and methods for processing a substrate and processing a process chamber are provided. In one embodiment, an apparatus is provided for processing a substrate including a power source, a switch box coupled to the power source and the switch box having a switch interchangeable between a first position and a second position, a first match box coupled to the switch box, a plasma generator coupled to the first match box, a second match box coupled to the switch box, and a remote plasma source coupled to the second match box.

Claims

1. An apparatus for processing a substrate, comprising:

a power source;

a switch box coupled to the power source and the switch box having a switch interchangeable between a first position and a second position;

a first match box coupled to the switch box;

a plasma generator coupled to the first match box;

a second match box coupled to the switch box; and

a remote plasma source coupled to the second match box.

2. The apparatus of claim 1, wherein the power source is an AC power source adapted to operate at one or more frequencies from about 300 kHz to about 13.56 MHz.

3. The apparatus of claim 1, wherein the power source applies a power from about 1 kilowatts to about 11 kilowatts to a plasma source.

4. The apparatus of claim 1, wherein the power source applies a power from about 1 kilowatts to about 11 kilowatts to a remote plasma source.

5. An apparatus for processing a substrate, comprising:

a chamber body having a dome portion;

a plasma generator disposed on the chamber body;

a remote plasma source disposed on the chamber body;

a switch box coupled to the plasma generator and the remote plasma source with the switch box having a switch interchangeable between a first position and a second position; and

a first power source coupled to the switch box.

6. The apparatus of claim 5, wherein the plasma generator comprises a first plurality of coils disposed on a top portion of the dome portion and a second plurality of coils disposed on a side portion of the dome portion.

7. The apparatus of claim 6, wherein the first power source is electrically coupled to the first plurality of coils when the switch is in the first position.

8. The apparatus of claim 6, further comprising a second power source coupled to the second plurality of coils.

9. The apparatus of claim 6, further comprising a substrate support disposed in the chamber body and a third power source coupled to the substrate support.

10. The apparatus of claim 5, wherein the first power source is an AC power source adapted to operate at one or more frequencies from about 300 kHz to about 13.56 MHz.

11. The apparatus of claim 8, wherein the second power source is an AC power source adapted to operate at one or more frequencies from about 300 kHz to about 13.56 MHz.

12. The apparatus of claim 6, wherein the first power source is electrically coupled to the remote plasma source of coils when the switch is in the second position.

13. The apparatus of claim 5, further comprising a first match box disposed between the switch box and a portion of the plasma generator and a second match box disposed between the switch box and the remote plasma source

14. A method for processing a substrate and processing a chamber, comprising:

positioning a substrate into a processing chamber and the processing chamber comprising;

a chamber body;

a plasma source disposed on the chamber body;

a remote plasma source disposed on the chamber body;

a switch box having first and second switch positions coupled to the plasma source and the remote plasma source; and

a first power source coupled to the switch box;

applying power from the first power source to a portion of the plasma generator through a switch in the first switch position;

supplying a first processing gas into the chamber;

generating a first plasma of the first processing gas in the chamber;

applying power from the first power source to a remote power source through a switch in the second switch position;

supplying a second processing gas into the remote plasma source;

generating a second plasma of the second processing gas in the remote plasma source; and

supplying the second processing gas to the chamber body.

15. The method of claim 14, wherein the first power source is an AC power source adapted to operate at one or more frequencies from about 300 kHz to about 13.56 MHz.

16. The method of claim 15, wherein the first power source supplies a power from about 1 kilowatts to about 11 kilowatts to a plasma generator or the power source supplies a power from about 1 kilowatts to about 11 kilowatts to a remote plasma source.

17. The method of claim 14, wherein the first processing gas is a deposition gas comprises silane and a gas selected from the group of ammonia, oxygen, or combinations thereof.

18. The method of claim 14, wherein the second processing gas is a cleaning gas selected from the group consisting of O₂, C₂F₅H, F₂, NF₃, CF₄, C₃F₈, or SF₆, and combinations thereof.

19. The method of claim 14, wherein the plasma generator comprises a first plurality of coils disposed on a top portion of the dome portion and a second plurality of coils disposed on a side portion of the dome portion.

20. The method of claim 19, further comprising a second power source coupled to the second plurality of coils.