BORON FILM INTERFACE ENGINEERING

• US 20100098884A1
• Filed: 06/22/2009
• Published: 04/22/2010
• Est. Priority Date: 10/16/2008
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: BALSEANU, MIHAELA, Xia, Li-Qun, Witty, Derek R., Chen, Yi
• Granted Patent: US 8,563,090 B2
• Time in Patent Office: Days
• US Class Current: 427/577
• CPC Class Codes: C23C 16/0272 Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• CPC Class Codes: C23C 16/342 Boron nitride
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264
• CPC Class Codes: H01L 21/76237 introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior

Abstract

Methods of depositing boron-containing liner layers on substrates involve the formation of a bilayer including an initiation layer which includes barrier material to inhibit the diffusion of boron from the bilayer into the underlying substrate.

Claims

1. A method of depositing a bilayer liner in a trench on a substrate in a processing chamber, the method comprising:

forming an initiation layer having a thickness less than or about 15 Å and

comprising at least one of the group of elements consisting of nitrogen and carbon; and

forming a boron-containing layer on the initiation layer;

wherein the initiation layer reduces diffusion of boron from the boron-containing layer into the substrate.

2. The method of claim 1 wherein the thickness of the boron-containing layer is less than or about 200 Å

.

3. The method of claim 1 wherein the initiation layer comprises silicon nitride.

4. The method of claim 1 wherein the initiation layer comprises a layer of silicon nitride and a layer of silicon boron nitride.

5. The method of claim 1 wherein the boron-containing layer comprises boron nitride.

6. The method of claim 1 wherein the initiation layer comprises nitrogen and has an atomic nitrogen concentration greater than about 10% and has an atomic boron concentration less than 10%.

7. The method of claim 1 wherein the initiation layer comprises carbon and has an atomic carbon concentration greater than about 10% and has an atomic boron concentration less than 10%.

8. The method of claim 1 wherein the initiation layer comprises both carbon and nitrogen and the sum of their atomic concentrations is greater than about 10% and the initiation layer has an atomic boron concentration less than 10%.

9. The method of claim 1 wherein the initiation layer comprises a nitrogen-rich boron nitride layer.

10. The method of claim 9 wherein the initiation layer comprises boron with an atomic boron concentration of less than about 47% and nitrogen with an atomic nitrogen concentration of greater than about 53%.

11. The method of claim 9 wherein the initiation layer comprises boron with an atomic boron concentration of less than about 44% and nitrogen with an atomic nitrogen concentration of greater than about 56%.

12. The method of claim 9 wherein the initiation layer comprises boron with an atomic boron concentration of less than about 42% and nitrogen with an atomic nitrogen concentration of greater than about 58%.

13. A method of depositing a bilayer liner on a surface of a substrate in a processing chamber, the method comprising:

forming a layer of barrier material on an interior surface of the processing chamber, wherein the layer of barrier material comprises at least one element from the group consisting of nitrogen and carbon;

transferring the substrate into the processing chamber;

forming an initiation layer on the substrate by striking a plasma in the processing chamber to redistribute a portion of the diffusion-barrier material from the interior surface of the processing chamber onto the substrate, wherein the initiation layer has a thickness less than or about 15 Å

; and

forming a boron-containing layer on the initiation layer.

14. The method of claim 13 wherein the surface of the substrate comprises a trench.

15. The method of claim 13 wherein the thickness of the boron-containing layer is less than or about 200 Å

.

16. The method of claim 13 wherein the initiation layer comprises silicon nitride.

17. The method of claim 13 wherein the silicon-containing layer comprises boron nitride.

18. The method of claim 13 wherein the initiation layer comprises nitrogen and has an atomic nitrogen concentration greater than about 10% and has an atomic boron concentration less than 10%.

19. The method of claim 13 wherein the initiation layer comprises carbon and has an atomic carbon concentration greater than about 10% and has an atomic boron concentration less than 10%.

20. The method of claim 13 wherein the initiation layer comprises both carbon and nitrogen and the sum of their atomic nitrogen concentrations is greater than about 10% and has an atomic boron concentration less than 10%.

21. The method of claim 13 wherein the initiation layer comprises a nitrogen-rich boron nitride layer.