Method for forming resist underlayer film, patterning process using the same, and composition for the resist underlayer film

• US 20100099044A1
• Filed: 09/14/2009
• Published: 04/22/2010
• Est. Priority Date: 10/20/2008
• Status: Active Grant

• Current Assignee: Shin-Etsu Chemical Company Limited
• Original Assignee: Shin-Etsu Chemical Company Limited
• Inventors: Hatakeyama, Jun, Fujii, Toshihiko, Ogihara, Tsutomu
• Granted Patent: US 8,450,048 B2
• Time in Patent Office: Days
• US Class Current: 430/285.1
• CPC Class Codes: G03F 7/091 characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• CPC Class Codes: G03F 7/095 having more than one photosensitive layer G03F7/075 takes precedence

Abstract

There is disclosed a method for forming a resist underlayer film of a multilayer resist film having at least three layers used in a lithography, comprising at least; a step of coating a composition for resist underlayer film containing a novolak resin represented by the following general formula (1) obtained by treating a compound having a bisnaphthol group on a substrate; and a step of curing the coated composition for the resist underlayer film by a heat treatment at a temperature above 300° C. and 600° C. or lower for 10 to 600 seconds. There can be provided a method for forming a resist underlayer film, and a patterning process using the method to form a resist underlayer film in a multilayer resist film having at least three layers used in a lithography, gives a resist underlayer film having a lowered reflectance, a high etching resistance, and a high heat and solvent resistances, especially without wiggling during substrate etching.

Claims

1. A method for forming a resist underlayer film of a multilayer resist film having at least three layers used in a lithography, comprising at least;

a step of coating a composition for a resist underlayer film containing a novolak resin represented by the following general formula (1) obtained by treating a compound having a bisnaphthol group on a substrate; and

a step of curing the coated composition for a resist underlayer film by a heat treatment at a temperature above 300°

C. and 600°

C. or lower for 10 to 600 seconds,

wherein R¹ and R² represent the same or a different hydrogen atom, a linear, a branched, or a cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an alkenyl group having 2 to 20 carbon atoms;

R³ and R⁴ each represents a hydrogen atom or a glycidyl group;

R⁵ represents a single bond, or a linear or a branched alkylene group having 1 to 10 carbon atoms;

R⁶ and R⁷ represent a benzene ring or a naphthalene ring;

each reference character p and q represents 1 or 2; and

a reference character n is 0<

n1.

2. The method for forming a resist underlayer film according to claim 1, wherein the composition for a resist underlayer film to be coated on the substrate contains a resin represented by the following general formula (2) and having a weight-average molecular weight of 500 to 100,000,

wherein R¹ to R⁷, and reference characters p and q represent the same meaning as before; R⁸ and R⁹ represent a hydrogen atom, a hydroxy group, an acyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 1 to 6 carbon atoms, a carbonyl group, an amino group, an imino group, a hydroxy group substituted with an acid-labile or a glycidyl group, or a linear, a branched, or a cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 20 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or an alkynyl group having 2 to 1.0 carbon atoms;

R¹⁰ and R¹¹ represent a benzene ring or a naphthalene ring;

R¹³ and R¹⁴ represent a hydrogen atom, a hydroxy group, or a linear, a branched, or a cyclic alkyl group having 1 to 10 carbon atoms, wherein R¹³ and R¹⁴ may be bonded to form a ring;

R¹² and R¹⁵ represent a linear or a branched alkylene group having 1 to 10 carbon atoms;

reference character s represents 1 or 2; and

each reference character n, m, and r satisfies 0<

n<

1.0, 0 m<

1.0, 0≦

r<

1.0, and 0<

m+r<

1.0.

3. The method for forming a resist underlayer film according to claim 1, wherein the step of coating the composition for a resist underlayer film on the substrate is carried out by a spin coat method.

4. The method for forming a resist underlayer film according to claim 2, wherein the step of coating the composition for a resist underlayer film on the substrate is carried out by a spin coat method.

5. A patterning process to form a pattern on a substrate by a lithography, comprising at least;

forming a resist underlayer film on a substrate by the method for forming the resist underlayer film according to claim 1;

forming a resist intermediate layer film by using a composition for the resist intermediate layer film containing a silicon atom on the resist underlayer film;

forming a resist upperlayer film by using a composition for the resist upperlayer film consisting of a photoresist composition on the resist intermediate layer film;

forming a resist pattern on the resist upperlayer film by development with a developer after exposing a pattern circuit region of the resist upperlayer film;

etching the resist intermediate layer film by using the obtained resist pattern as an etching mask;

etching the resist underlayer film by using the obtained pattern of the resist intermediate layer film as an etching mask; and

etching the substrate by using the obtained pattern of the resist underlayer film as an etching mask to obtain a pattern on a substrate.

6. A patterning process to form a pattern on a substrate by a lithography, comprising at least;

forming a resist underlayer film on a substrate by the method for forming the resist underlayer film according to claim 2;

forming a resist intermediate layer film by using a composition for the resist intermediate layer film containing a silicon atom on the resist underlayer film;

forming a resist upperlayer film by using a composition for the resist upperlayer film consisting of a photoresist composition on the resist intermediate layer film;

forming a resist pattern on the resist upperlayer film by development with a developer after exposing a pattern circuit region of the resist upperlayer film;

etching the resist intermediate layer film by using the obtained resist pattern as an etching mask;

etching the resist underlayer film by using the obtained pattern of the resist intermediate layer film as an etching mask; and

etching the substrate by using the obtained pattern of the resist underlayer film as an etching mask to obtain a pattern on a substrate.

7. A patterning process to form a pattern on a substrate by a lithography, comprising at least;

forming a resist underlayer film on a substrate by the method for forming the resist underlayer film according to claim 3;

forming a resist intermediate layer film by using a composition for the resist intermediate layer film containing a silicon atom on the resist underlayer film;

forming a resist upperlayer film by using a composition for the resist upperlayer film consisting of a photoresist composition on the resist intermediate layer film;

forming a resist pattern on the resist upperlayer film by development with a developer after exposing a pattern circuit region of the resist upperlayer film;

etching the resist intermediate layer film by using the obtained resist pattern as an etching mask;

etching the resist underlayer film by using the obtained pattern of the resist intermediate layer film as an etching mask; and

etching the substrate by using the obtained pattern of the resist underlayer film as an etching mask to obtain a pattern on a substrate.

8. A patterning process to form a pattern on a substrate by a lithography, comprising at least;

forming a resist underlayer film on a substrate by the method for forming the resist underlayer film according to claim 4;

forming a resist intermediate layer film by using a composition for the resist intermediate layer film containing a silicon atom on the resist underlayer film;

forming a resist upperlayer film by using a composition for the resist upperlayer film consisting of a photoresist composition on the resist intermediate layer film;

forming a resist pattern on the resist upperlayer film by development with a developer after exposing a pattern circuit region of the resist upperlayer film;

etching the resist intermediate layer film by using the obtained resist pattern as an etching mask;

etching the resist underlayer film by using the obtained pattern of the resist intermediate layer film as an etching mask; and

etching the substrate by using the obtained pattern of the resist underlayer film as an etching mask to obtain a pattern on a substrate.

9. A patterning process to form a pattern on a substrate by a lithography, comprising at least;

forming a resist underlayer film on a substrate by the method for forming the resist underlayer film according to claim 1;

forming an inorganic hard mask intermediate film selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the resist underlayer film;

forming a resist upperlayer film by using a composition for the resist upperlayer film consisting of a photoresist composition on the inorganic hard mask intermediate film;

forming a resist pattern on the resist upperlayer film by development with a developer after exposing a pattern circuit region of the resist upperlayer film;

etching the inorganic hard mask intermediate film by using the obtained resist pattern as an etching mask;

etching the resist underlayer film by using the obtained pattern of the inorganic hard mask intermediate film as an etching mask; and

etching the substrate by using the obtained pattern of the resist underlayer film as an etching mask to obtain a pattern on a substrate.

10. A patterning process to form a pattern on a substrate by a lithography, comprising at least;

forming a resist underlayer film on a substrate by the method for forming the resist underlayer film according to claim 2;

forming an inorganic hard mask intermediate film selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the resist underlayer film;

forming a resist upperlayer film by using a composition for the resist upperlayer film consisting of a photoresist composition on the inorganic hard mask intermediate film;

forming a resist pattern on the resist upperlayer film by development with a developer after exposing a pattern circuit region of the resist upperlayer film;

etching the inorganic hard mask intermediate film by using the obtained resist pattern as an etching mask;

etching the resist underlayer film by using the obtained pattern of the inorganic hard mask intermediate film as an etching mask; and

etching the substrate by using the obtained pattern of the resist underlayer film as an etching mask to obtain a pattern on a substrate.

11. A patterning process to form a pattern on a substrate by a lithography, comprising at least;

forming a resist underlayer film on a substrate by the method for forming the resist underlayer film according to claim 3;

forming an inorganic hard mask intermediate film selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the resist underlayer film;

forming a resist upperlayer film by using a composition for the resist upperlayer film consisting of a photoresist composition on the inorganic hard mask intermediate film;

forming a resist pattern on the resist upperlayer film by development with a developer after exposing a pattern circuit region of the resist upperlayer film;

etching the inorganic hard mask intermediate film by using the obtained resist pattern as an etching mask;

etching the resist underlayer film by using the obtained pattern of the inorganic hard mask intermediate film as an etching mask; and

etching the substrate by using the obtained pattern of the resist underlayer film as an etching mask to obtain a pattern on a substrate.

12. A patterning process to form a pattern on a substrate by a lithography, comprising at least;

forming a resist underlayer film on a substrate by the method for forming the resist underlayer film according to claim 4;

forming an inorganic hard mask intermediate film selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the resist underlayer film;

forming a resist upperlayer film by using a composition for the resist upperlayer film consisting of a photoresist composition on the inorganic hard mask intermediate film;

forming a resist pattern on the resist upperlayer film by development with a developer after exposing a pattern circuit region of the resist upperlayer film;

etching the inorganic hard mask intermediate film by using the obtained resist pattern as an etching mask;

etching the resist underlayer film by using the obtained pattern of the inorganic hard mask intermediate film as an etching mask; and

etching the substrate by using the obtained pattern of the resist underlayer film as an etching mask to obtain a pattern on a substrate.

13. A patterning process to form a pattern on a substrate by a lithography, comprising at least;

forming a resist underlayer film on a substrate by the method for forming the resist underlayer film according to claim 1;

forming an inorganic hard mask intermediate film selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the resist underlayer film;

forming an organic anti-reflection film on the inorganic hard mask intermediate film;

forming a resist upperlayer film by using a composition for the resist upperlayer film consisting of a photoresist composition on the organic anti-reflection film;

forming a resist pattern on the resist upperlayer film by development with a developer after exposing a pattern circuit region of the resist upperlayer film;

etching the organic anti-reflection film and the inorganic hard mask intermediate film by using the obtained resist pattern as an etching mask;

etching the resist underlayer film by using the obtained pattern of an inorganic hard mask intermediate film as an etching mask; and

etching the substrate by using the obtained pattern of the resist underlayer film as an etching mask to obtain a pattern on a substrate.

14. A patterning process to form a pattern on a substrate by a lithography, comprising at least;

forming a resist underlayer film on a substrate by the method for forming the resist underlayer film according to claim 2;

forming an inorganic hard mask intermediate film selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the resist underlayer film;

forming an organic anti-reflection film on the inorganic hard mask intermediate film;

forming a resist upperlayer film by using a composition for the resist upperlayer film consisting of a photoresist composition on the organic anti-reflection film;

forming a resist pattern on the resist upperlayer film by development with a developer after exposing a pattern circuit region of the resist upperlayer film;

etching the organic anti-reflection film and the inorganic hard mask intermediate film by using the obtained resist pattern as an etching mask;

etching the resist underlayer film by using the obtained pattern of an inorganic hard mask intermediate film as an etching mask; and

etching the substrate by using the obtained pattern of the resist underlayer film as an etching mask to obtain a pattern on a substrate.

15. A patterning process to form a pattern on a substrate by a lithography, comprising at least;

forming a resist underlayer film on a substrate by the method for forming the resist underlayer film according to claim 3;

forming an inorganic hard mask intermediate film selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the resist underlayer film;

forming an organic anti-reflection film on the inorganic hard mask intermediate film;

forming a resist upperlayer film by using a composition for the resist upperlayer film consisting of a photoresist composition on the organic anti-reflection film;

forming a resist pattern on the resist upperlayer film by development with a developer after exposing a pattern circuit region of the resist upperlayer film;

etching the organic anti-reflection film and the inorganic hard mask intermediate film by using the obtained resist pattern as an etching mask;

etching the resist underlayer film by using the obtained pattern of an inorganic hard mask intermediate film as an etching mask; and

etching the substrate by using the obtained pattern of the resist underlayer film as an etching mask to obtain a pattern on a substrate.

16. A patterning process to form a pattern on a substrate by a lithography, comprising at least;

forming a resist underlayer film on a substrate by the method for forming the resist underlayer film according to claim 4;

forming an inorganic hard mask intermediate film selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the resist underlayer film;

forming an organic anti-reflection film on the inorganic hard mask intermediate film;

forming a resist upperlayer film by using a composition for the resist upperlayer film consisting of a photoresist composition on the organic anti-reflection film;

forming a resist pattern on the resist upperlayer film by development with a developer after exposing a pattern circuit region of the resist upperlayer film;

etching the organic anti-reflection film and the inorganic hard mask intermediate film by using the obtained resist pattern as an etching mask;

etching the resist underlayer film by using the obtained pattern of an inorganic hard mask intermediate film as an etching mask; and

etching the substrate by using the obtained pattern of the resist underlayer film as an etching mask to obtain a pattern on a substrate.

17. The patterning process according to claim 9, wherein the inorganic hard mask intermediate film is formed by a CVD method or an ALD method.

18. The patterning process according to claim 16, wherein the inorganic hard mask intermediate film is formed by a CVD method or an ALD method.

19. The patterning process according to claim 5, wherein the photoresist composition does not contain a polymer having a silicon atom.

20. The patterning process according to claim 18, wherein the photoresist composition does not contain a polymer having a silicon atom.

21. The patterning process according to claim 19, wherein the step of etching the resist underlayer film by using the pattern of the inorganic hard mask intermediate film as an etching mask is carried out by using an etching gas containing an oxygen gas or a hydrogen gas.

22. The patterning process according to claim 20, wherein the step of etching the resist underlayer film by using the pattern of the inorganic hard mask intermediate film as an etching mask is carried out by using an etching gas containing an oxygen gas or a hydrogen gas.

23. A composition for forming a resist underlayer film of a multilayer resist film having at least three layers used in a lithography, comprising a resin represented by the following general formula (3) and having a weight-average molecular weight of 500 to 100,000,

wherein R¹ and R² represent the same or a different hydrogen atom, a linear, a branched, or a cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an alkenyl group having 2 to 20 carbon atoms;

R³ and R⁴ each represents a hydrogen atom or a glycidyl group;

R⁵ represents a single bond, or a linear or a branched alkylene group having 1 to 10 carbon atoms;

R⁶ and R⁷ represent a benzene ring or a naphthalene ring;

each reference character p and q represents 1 or 2;

R⁸ and R⁹ represent a hydrogen atom, a hydroxy group, an acyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 1 to 6 carbon atoms, a carbonyl group, an amino group, an imino group, a hydroxy group substituted with an acid-labile or a glycidyl group, or a linear, a branched, or a cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 20 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or an alkynyl group having 2 to 10 carbon atoms;

R¹⁰ and R¹¹ represent a benzene ring or a naphthalene ring;

R¹³ and R¹⁴ represent a hydrogen atom, a hydroxy group, or a linear, a branched, or a cyclic alkyl group having 1 to 10 carbon atoms, wherein R¹³ and R¹⁴ may be bonded to form a ring;

R¹² and R¹⁵ represent a linear or a branched alkylene group having 1 to 10 carbon atoms;

reference character s represents 1 or 2; and

each reference character n, m, and r satisfies 0<

n<

1.0, 0≦

m<

1.0, 0≦

r<

1.0, and 0<

m+r<

1.0.